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Your search keyword '"Gaggero-Sager, L.M."' showing total 12 results
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12 results on '"Gaggero-Sager, L.M."'

1. Combined method for simulating electron spectrum of δ-doped quantum wells in n-Si.

Author

Grimalsky, V., Gaggero-Sager, L.M., Koshevaya, S., and Castrejon-M., C.

Abstract

The combined method to investigate the electron spectrum of single n-type δ-doped quantum wells in silicon is proposed. It is based on computing the electron potential energy by means of the Thomas-Fermi method at finite temperatures; then the obtained potential energy is applied to the iteration procedure with solving the Schrödinger equations for the electron spectrum and the Poisson one for the potential energy. The combined method demonstrates rapid convergence. It is shown that that the simple TF method gives a good approximation for the electron potential energy and for the total electron concentration within the well. [ABSTRACT FROM PUBLISHER]

Published
2012
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9. Exchange and correlation in the Thomas–Fermi approximation.

Author

Gaggero Sager, L.M.

Abstract

We present the exchange and correlation potential calculated analytically as a function of the Hartree potential. We arrived at this expression by using the Thomas–Fermi approximation. This is an alternative way of calculating the exchange and correlation potential which can be very efficient. [ABSTRACT FROM AUTHOR]

Published
1999
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12. Electronic structure of delta-doped quantum well as a function of temperature.

Author

Gaggero-Sager, L.M. and Perez-Alvarez, R.

Subjects
BORON, QUANTUM wells, ELECTRONIC structure, SILICON
Abstract

Describes the electronic structure of a delta-doped quantum well of boron in silicon as a temperature function. Use of Hartree approximation in the calculation; Energy levels and occupation number of the discrete states; Changes in carrier concentration at temperature greater than 80 degrees Kelvin.

Published
1997
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