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Electronic Structure of B δ-Doped Si Quantum Wells at Room Temperature: The High Density Limit.

Authors :
Gaggero-Sager, L.M.
Mora-Ramos, M.E.
Source :
Physica Status Solidi (B); Nov1998, Vol. 210 Issue 1, p81-86, 6p
Publication Year :
1998

Details

Language :
English
ISSN :
03701972
Volume :
210
Issue :
1
Database :
Complementary Index
Journal :
Physica Status Solidi (B)
Publication Type :
Academic Journal
Accession number :
62450547
Full Text :
https://doi.org/10.1002/(SICI)1521-3951(199811)210:1<81::AID-PSSB81>3.0.CO;2-N