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Electronic structure of delta-doped quantum well as a function of temperature.
- Source :
- Applied Physics Letters; 1/13/1997, Vol. 70 Issue 2, p212, 2p, 1 Chart, 2 Graphs
- Publication Year :
- 1997
-
Abstract
- Describes the electronic structure of a delta-doped quantum well of boron in silicon as a temperature function. Use of Hartree approximation in the calculation; Energy levels and occupation number of the discrete states; Changes in carrier concentration at temperature greater than 80 degrees Kelvin.
- Subjects :
- BORON
QUANTUM wells
ELECTRONIC structure
SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 70
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4187068
- Full Text :
- https://doi.org/10.1063/1.118369