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We propose a novel model approach for temperature evaluation in the channel region of a InAlN/AlN/gallium nitride high electron mobility transistor (HEMT) due to self-heating effects. The heat transfer in a HEMT device has been investigated experimentally by the nearby temperature sensor and compared by theoretical models solved by both numerical and analytical methods. The average temperature of the channel area of almost 160 °C for dissipated power of 2 W was determined using the drain-source current variation analysis. The electrical and thermal behavioral numerical model under quasi-static conditions have been used to describe the HEMT device. In contrast, the one-dimensional thermal model for analytical evaluation has been proposed as an alternative approach. Surprisingly, the experimental results verified not only the validity of precise numerical simulation but also the simplified analytical model that makes it a reliable tool even for complex electronic devices. [ABSTRACT FROM AUTHOR]

Defects in the emitter region of Ga[sub 0.51]In[sub 0.49]P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635 °C, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87 ± 0.05 eV below the conduction band, the capture cross section 3 × 10[sup -14] cm² and the defect density of the order of 10[sup 14] cm[sup -3]. This defect was also found to be localized at the emitter-base interface. [ABSTRACT FROM AUTHOR]

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov–Shur plasma wave instability in the gated two-dimensional electron gas. [ABSTRACT FROM AUTHOR]

We have investigated the growth of the c-axis oriented aluminum nitride (AlN) thin films on (100) silicon by reactive dc magnetron sputtering at low temperature, considering the effect of the magnet configuration on plasma and film properties. It appears that a magnet modification can significantly modify both the plasma characteristics and the film properties. Electrical and optical characterizations of the plasma phase highlight that depending on the magnet configuration, two very different types of deposition process can be involved in the same deposition chamber. On the one hand, with a balanced magnetron (type 1), the deposition process enhances the production of AlN dimers in the plasma phase and enables to synthesize AlN films with different preferential orientations (100, 002, and even 101). On the other hand, a strongly unbalanced magnetron (type 2) provides a limited production of AlN species in the plasma phase and a strong increase in the ratio of ions to metal atom flux on the growing films. In the latter case, the ion energy provided by the ion flux to the growing film is typically in the 20–30 eV range. Thus, dense (002) oriented films with high crystalline quality are obtained without any substrate heating. [ABSTRACT FROM AUTHOR]

Investigates the effect of electron irradiation on the antimony (Sb) doping levels in silicon molecular-beam epitaxy. Influence of electron irradiation on the Sb adlayer; Growth parameters in the Sb-cell temperature.

Characterizes the defects in epitaxial silicon-doped GaInP. Measurement of the cross section for electron and hole capture; Effect of an electric field on the ionization energy; Method of investigating the persistent photoconductivity effect.

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High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3” SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at 30 GHz as evidenced by CW Load Pull characterization: an output power of 6 W/mm and a power-added efficiency of 42%. A good extrinsic transconductance value higher than 450 mS/mm and a current density up to 1.55 A/mm were also measured on these transistors. [ABSTRACT FROM PUBLISHER]

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose. [ABSTRACT FROM AUTHOR]

We previously reported that ras and polyoma middle T (PyMT), a constitutive activator of the src proto-oncogene product, up-regulated Caco-2 cell proliferation along with protein kinase C (PKC) alpha expression and PKC activity. We aimed to investigate whether oncogene-induced up-regulation of Caco-2 cell proliferation involved stimulation of the autocrine IGF-II/IGF-I receptor (IGF1R) loop described in these cells and if so, to analyse the role of overexpressed and activated PKC. Compared with control vector transfected Caco-2 cells, ras- and PyMT-transfected cells exhibited increased expression of the 6.0 and 4.8 kb IGF-II transcripts. This was due to increased activity of the P3 and P4 promoters of the IGF-II gene which correlated with increased expression and DNA-binding activity of Sp1, a transcription factor interacting with several specific sites in P3 and P4 promoters. Oncogene-transfected cells displayed enhanced autocrine IGF-II production, which was fully responsible for the oncogene-induced increase in their proliferation since this increase was blunted by anti-human IGF-II and IGF1R (αIR3) antibodies. PKC mediated oncogene activation of the IGF-II gene presumably through action on Sp1 since (i) PKC activation by phorbol 12-myristate 13-acetate increased Sp1 expression, P3 and P4 activity and IGF-II mRNA in control but not in oncogene-transfected cells; and (ii) PKC inhibition by the PKC inhibitor Gö6976 reduced Sp1, P3 and P4 activity and IGF-II mRNA in all three cell lines. This is the first evidence that ras- and PyMT/src oncogenes up-regulate Caco-2 cell proliferation through a PKC-mediated pathway which stimulates IGF-II gene transcription and thereby increases autocrine IGF-II production. The mechanisms underlying IGF-II gene activation by PKC most probably involve action on Sp1. [ABSTRACT FROM AUTHOR]

We present low-frequency gate noise characteristics of InAlN/AlN/GaN heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The electric field in the InAlN barrier is determined from C-V measurements and is used for gate leakage current modeling. The latter is dominated by Poole-Frenkel emission at low reverse bias and Fowler-Nordheim tunneling at high electric field. Several useful physical parameters are extracted from a gate leakage model including polarizations-induced field. The gate noise fluctuations are dominated by trapping-detrapping processes including discrete traps and two continuums of traps with distributed time constants. Burst noise with several levels and time constant values is also observed in these structures. Lowfrequency noise measurements confirm the presence of field-assisted emission from trap states. The 1f noise model of McWorther is used to explain the 1/f-like noise behavior in a restricted frequency range. [ABSTRACT FROM AUTHOR]

We report on the investigation of lattice matched InAlN/GaN MOS-HEMT structures prepared by thermal oxidation at 800 °C in oxygen atmosphere for two minutes. The gate leakage current was reduced by two orders of magnitude. Pulse measurements showed lag effects similar to what is observed for devices without oxidation, indicating a high quality native oxide. The MOS-HEMT showed no degradation in the small signal characteristics and yielded a power density of 5 W/mm at 30 V drain voltage at 10 GHz, power added efficiency of 42% and Ft and Fmax of 42 and 61 GHz respectively, illustrating the capability of such MOS-HEMT to operate at high frequencies. [ABSTRACT FROM AUTHOR]