Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defects.

Details

Language :

English

ISBNs :

9781424427161

Database :

Complementary Index

Journal :

2008 Conference on Optoelectronic & Microelectronic Materials & Devices

Publication Type :

Conference

Accession number :

80994523

Full Text :

https://doi.org/10.1109/COMMAD.2008.4802078