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15 results on '"Jiang, Guangyuan"'

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1. A novel method to determine bias-dependent source and drain parasitic series resistances in AlGaN/GaN high electron mobility transistors.

2. Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors.

3. The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors.

4. Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors.

5. Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack.

6. Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal–insulator–semiconductor high-electron -mobility transistors.

7. The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length.

8. The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors.

9. The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors.

10. NCAPG2 facilitates glioblastoma cells' malignancy and xenograft tumor growth via HBO1 activation by phosphorylation.

11. A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate.

12. Influence of Polarization Coulomb Field Scattering on the Sub-60 mV/dec Switching of AlGaN/GaN HFETs.

13. A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.

14. Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method.

15. Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures.

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