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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method.
- Source :
-
AIP Advances . Aug2021, Vol. 11 Issue 8, p1-6. 6p. - Publication Year :
- 2021
-
Abstract
- This paper demonstrates the improvement of device linearity in AlGaN/GaN heterostructure field effect transistors (HFETs) using polarization Coulomb field (PCF) scattering and investigates the relationship between device linearity and PCF scattering under 10 and 20 V drain bias. The mobility of the gate-to-source region in AlGaN/GaN HFETs is calculated using the Monte Carlo method. We find that PCF scattering decreases with an increase in gate bias (from −3 to −0.5 V) under high field conditions, leading to lower gate-to-source resistance. Under 20 V drain bias, linearity is worse than under 10 V drain bias. The transconductance drop is significant in AlGaN/GaN HFETs, which damages linearity. By adopting an appropriate drain bias, PCF scattering can alleviate transconductance drop and improve the linearity of AlGaN/GaN HFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 11
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 152213550
- Full Text :
- https://doi.org/10.1063/5.0056337