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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors.
- Source :
-
AIP Advances . Jul2020, Vol. 10 Issue 7, p1-7. 7p. - Publication Year :
- 2020
-
Abstract
- AlGaN/GaN heterostructure field-effect transistors (HFETs) with three kinds of gate lengths were fabricated, and the theory of polarization Coulomb field (PCF) scattering with the electron systems in the AlGaN/GaN HFETs was studied. There are two methods of analysis and calculation of the PCF scattering in AlGaN/GaN HFETs: one is by considering the 2-dimensional electronic gas (2DEG) of the gate-source, gate-drain, and gate regions as three independent electron systems and the other is by considering the 2DEG of the drain–source channel as a unified electron system. The calculation and analysis of the additional polarization charges underneath the gate region for the prepared AlGaN/GaN HFETs indicate that the theory of PCF scattering in AlGaN/GaN HFETs with three independent electron systems is more accurate. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 10
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 144934486
- Full Text :
- https://doi.org/10.1063/5.0012615