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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors.

Authors :
Jiang, Guangyuan
Lv, Yuanjie
Lin, Zhaojun
Yang, Yongxiong
Liu, Yang
Guo, Shuoshuo
Zhou, Yan
Source :
AIP Advances. Jul2020, Vol. 10 Issue 7, p1-7. 7p.
Publication Year :
2020

Abstract

AlGaN/GaN heterostructure field-effect transistors (HFETs) with three kinds of gate lengths were fabricated, and the theory of polarization Coulomb field (PCF) scattering with the electron systems in the AlGaN/GaN HFETs was studied. There are two methods of analysis and calculation of the PCF scattering in AlGaN/GaN HFETs: one is by considering the 2-dimensional electronic gas (2DEG) of the gate-source, gate-drain, and gate regions as three independent electron systems and the other is by considering the 2DEG of the drain–source channel as a unified electron system. The calculation and analysis of the additional polarization charges underneath the gate region for the prepared AlGaN/GaN HFETs indicate that the theory of PCF scattering in AlGaN/GaN HFETs with three independent electron systems is more accurate. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21583226
Volume :
10
Issue :
7
Database :
Academic Search Index
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
144934486
Full Text :
https://doi.org/10.1063/5.0012615