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• Assembled photovoltaics panels might present mismatch losses due to localized defects in cells. • Measurement of the individual current-voltage relationship for cells is no longer possible on assembled modules. • A procedure to extract this characteristic from module-level measurements is proposed. • The methodology is described with the aim to implement it in an automated environment. In this work, a non-destructive, automated procedure to extract the I-V characteristics of individual cells of fully encapsulated photovoltaic (PV) modules is proposed. The approach is able to correctly identify and extract the electrical parameters of underperforming cells, due for example to defects or degradation. The approach uses multiple I-V measurements on the PV module assuming specific levels of shading on the individual cells. The single circuit models for the cells are obtained through the solution of an inverse fitting problem. The approach was validated in a simulated environment through statistical analysis, with the cell parameters based on real silicon PV devices. The computational complexity of the approach is also investigated and validation examples with different configurations of PV modules, including bypass diodes are presented. The approach was validated on several tests to assess noise robustness, flexibility in terms of cells non-uniformities and scalability towards larger systems, resulting in a lean and accurate procedure for I-V curves extraction. The proposed methodology can be potentially utilised for automated quality assurance and fault assessment of PV modules, investigation of degradation mechanisms of cells in PV modules, or quantitative validation of other optical imaging techniques such as luminescence imaging and infrared thermography. [ABSTRACT FROM AUTHOR]

We investigate the band bending that occurs at the interface between a disordered organic semiconductor and a metal electrode. Ultraviolet photoemission spectroscopy measurements of thin organic layers on conducting substrates have revealed band bending within a few nanometers of the interface. It has been proposed that this is caused by the transfer of carriers from the substrate into empty states in the organic film. Here we numerically model this process by simulating a film with a given density of states in thermal equilibrium with a metallic substrate. Comparing the model with various published experiments, we demonstrate that the observed band bending can be explained equally well by either energetic relaxation of charge carriers on a timescale longer than photoemission (polaronic relaxation) or by a Gaussian density of states representing energetic disorder. In the former case, our results suggest that the thermal injection of carriers to higher-energy states has led observers to overestimate the relaxation energy by as much as several hundred meV. We also show that band-bending effects due to disorder are expected to significantly reduce the open-circuit voltage in organic photovoltaic devices, and we quantify the relationship between the amount of voltage loss and the degree of disorder. [ABSTRACT FROM AUTHOR]

• Spectrally corrected albedo data can be generated using a hybrid albedometer approach. • Albedometers require > 1 year measurement time for reliable PV yield modelling. • Satellite sources can provide low-cost historical spectrally corrected albedo. • Moderate resolution satellite albedo sources are inaccurate for complex temperate sites. • A novel hybrid satellite method provides accuracy comparable to ground station measurements. Bifacial photovoltaic (PV) systems harvest additional light reflected from the ground. The proportion of light reflected from the ground (albedo) is a critical parameter in estimating the expected performance of these systems. It is important that albedo data are available at the system design stage are accurate and relevant, and that the confidence in these data can be quantified. This work investigates the challenges of different albedo data sources and proposes solutions towards more reliable datasets. Satellite sources, such as the NASA Moderate Resolution Imaging Spectrometer (MODIS) products, provide data that can be used to model effective albedo anywhere in the world. Nevertheless, there are numerous sources of error that can add uncertainty in bifacial gain, reducing confidence and increasing financial risk. For smaller sites (<∼10 MW) located in varied landscapes, the scaling error caused by the low spatial resolution can be large. By analysing case studies in complex agricultural landscapes, we investigate the accuracy of different albedo measurement approaches. Monitoring stations with reference cells and pyranometers were deployed to validate satellite data and to realise a site measurement campaign for albedo measurements. Since these sites are much smaller than a MODIS pixel, we have evaluated alternative approaches, including "typical landscapes" with adjustments for local latitude and weather, and a novel method of combining MODIS data with higher resolution satellite data. The latter offers a practical solution with good agreement with the ground-based station. [ABSTRACT FROM AUTHOR]

We present a tool for simulating photoconductive atomic-force microscopy (Pc-AFM) on bulk heterojunction (BHJ) materials with a minimal set of empirical parameters. The simulation is a master-equation solution of a three-dimensional hopping charge transport model which includes donor-acceptor domain morphology, energetic and spatial disorder, exciton transport and splitting, charge-pair generation and recombination, and tip-substrate electrostatics. A simplifying aspect of the model is that electron transport, hole transport, and electron-hole recombination are treated as the same electron-transfer process. The model recreates realistic bulk recombination rates, without requiring short-range Coulombic effects to be calculated. We demonstrate the tool by simulating line scans of a Pc-AFM tip passing over the surface of a buried or exposed acceptor cluster in a BHJ film. The simulations confirm experimental observations that such defects can be detected by open-circuit mode Pc-AFM imaging, even when the clusters are buried below the surface. [ABSTRACT FROM AUTHOR]

Highlights: [•] We study variation in mobility measurements on organic films. [•] Values extracted by different scientists typically vary by about a factor of 3. [•] We propose a protocol that drastically reduces this variation. [•] Control of film thickness and electrode quality are also important factors. [Copyright &y& Elsevier]

We simulate organic bulk heterojunction solar cells. The effects of energetic disorder are incorporated through a Gaussian or exponential model of density of states. Analytical models of open-circuit voltage (VOC) are derived from the splitting of quasi-Fermi potentials. Their predictions are backed up by more complex numerical device simulations including effects such as carrier-density-dependent charge-carrier mobilities. It is predicted that the VOC depends on: (1) the donor-acceptor energy gap; (2) charge-carrier recombination rates; (3) illumination intensity; (4) the contact work functions (if not in the pinning regime); and (5) the amount of energetic disorder. A large degree of energetic disorder, or a high density of traps, is found to cause significant reductions in VOC. This can explain why VOC is often less than expected in real devices. Energetic disorder also explains the nonideal temperature and intensity dependence of VOC and the superbimolecular recombination rates observed in many real bulk heterojunction solar cells. [ABSTRACT FROM AUTHOR]

We investigate charge transport in a high-electron mobility polymer, poly(N,N-bis 2-octyldodecyl-naphthalene-1,4,5,8-bis dicarboximide-2,6-diyl-alt-5,5-2,2-bithiophene) [P(NDI2OD-T2), Polyera ActivInk™ N2200]. Time-of-flight measurements reveal electron mobilities approaching those measured in field-effect transistors, the highest ever recorded in a conjugated polymer using this technique. The modest temperature dependence and weak dispersion of the transients indicate low energetic disorder in this material. Steady-state electron-only current measurements reveal a barrier to injection of about 300 meV. We propose that this barrier is located within the P(NDI2OD-T2) film and arises from molecular orientation effects. [ABSTRACT FROM AUTHOR]

Spatial characterisation methods for photodetectors and other optoelectronic devices are necessary for determining local performance, as well as detecting local defects and the non-uniformities of devices. Light beam induced current measurements provide local performance information about devices at their actual operating conditions. Compressed sensing current mapping offers additional specific advantages, such as high speed without the use of complicated experimental layouts or lock-in amplifiers. In this work, the signal amplification advantages of compressed sensing current mapping are presented. It is demonstrated that the sparsity of the patterns used for compressive sampling can be controlled to achieve significant signal amplification of at least two orders of magnitude, while maintaining or increasing the accuracy of measurements. Accurate measurements can be acquired even when a point-by-point scan yields high noise levels, which distort the accuracy of measurements. Pixel-by-pixel comparisons of photocurrent maps are realised using different sensing matrices and reconstruction algorithms for different samples. The results additionally demonstrate that such an optical system would be ideal for investigating compressed sensing procedures for other optical measurement applications, where experimental noise is included. [ABSTRACT FROM AUTHOR]

The 3D nanostructure of organic materials plays a key role in their performance in a broad range of fields, from life sciences to electronics. However, characterising the functionality of their morphologies presents a critical challenge requiring nanometre resolution in 3 dimensions and methods that do not excessively distort the soft matter during measurement. Here we present scanning probe tomography using a commercial Pt-Ir coated tip and controlling the tip loading force to sequentially characterise and remove layers from the surface of a sample. We demonstrate this process on a sample exhibiting a polymer nanowire morphology, which is typically used for organic electronic applications, and present a tomographic reconstruction of the nanoscale charge transport network of the semi-crystalline polymer. Good electrical connectivity in 3D is demonstrated by directly probing the electrical properties of the inter-nanowire charge conduction. [ABSTRACT FROM AUTHOR]

To address the nature of charge transport and the origin of severe (intrinsic) trapping in electron-transporting polymers, transient and steady-state charge transport measurements have been conducted on the prototype donor/acceptor copolymer poly[2,7-(9,9-dialkyl-fluorene)-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PFTBTT). A charge-generation layer technique is used to selectively address transport of the desired charge carrier type, to perform time-of-flight measurements on samples with <200 nm thickness, and to combine the time-of-flight and the photocharge extraction by linearly increasing voltage (photo-CELIV) techniques to investigate charge carrier dynamics over a wide time range. Significant trapping of free electrons is observed in the bulk of dioctyl-substituted PFTBTT (alt-PF8TBTT), introducing a strong relaxation of the charge carrier mobility with time. We used Monte-Carlo simulation to simulate the measured transient data and found that all measurements can be modeled with a single parameter set, with the charge transport behavior determined by multiple trapping and detrapping of electrons in an exponential trap distribution. The influence of the concomitant mobility relaxation on the transient photocurrent characteristics in photo-CELIV experiments is discussed and shown to explain subtle features that were seen in former publications but were not yet assigned to electron trapping. Comparable studies on PFFBTT copolymers with chemical modifications of the side chains and backbone suggest that the observed electron trapping is not caused by a distinct chemical species but rather is related to interchain interactions. [ABSTRACT FROM AUTHOR]

The effects of x-ray irradiation on the electrical performance of organic thin film transistors (OTFTs) have been examined up to equivalent lifetime doses for medical digital x-ray imaging backplanes. Transistor performance metrics have been assessed before and after exposures up to 500 Gy for bottom-gate, bottom-contact OTFTs of p-channel polytriarylamine and polyfluorene semiconductors. There is no discernible degradation in device performance for either material and no indication of the creation of additional trap states. In situ measurements indicate that x-ray exposure tends to reverse undesirable shifts in the threshold voltage due to prolonged atmospheric exposure and bias stress. [ABSTRACT FROM AUTHOR]

Advances in organic photovoltaics have created the opportunity for low-cost, high-throughput manufacture of solar cells using roll-to-roll printing technology; however, the performance, reliability, and production yield of these devices can be critically limited by the incorporation of defects during fabrication. The detection and elimination of all printing defects is unrealistic, so techniques are required to identify those types of defects which are most critical to solar cell functionality. Here, we combine mapping of both surface topography and photovoltaic properties in order to understand the impact of various types of defect on the functional performance. To enable this comparison, transient photocurrent and photovoltage mapping is demonstrated as a technique for measuring local variation in charge carrier dynamics. We find that dust particle contamination corresponds with localised reductions in charge extraction rate. This novel measurement technique provides a way to distinguish between different types of defect by considering both the magnitude and dynamics of the local transient responses. [ABSTRACT FROM AUTHOR]

The inter-comparability of ageing of organic photovoltaic (OPV) technologies in dark is addressed. Four primary factors that affect the reproducibility of the ageing rate determination and inter-comparison are discussed: production/encapsulation of the samples, current–voltage ( IV ) characterization, testing conditions for ageing and lifetime determination from a decay curve. Results of inter-laboratory ageing studies of roll-to-roll and spin coated samples with correspondingly flexible plastic packaging and glass stored in dark conditions among 7 laboratories are presented. ISOS test conditions, proposed recently as guiding protocols for testing OPV stability, are applied in the study. The reproducibility of the performance versus the production and encapsulation techniques is firstly studied. The results reveal a significant improvement in the reproducibility when going from manual spin coating to roll-to-roll production. Furthermore, the reproducibility of current–voltage ( IV ) measurement and preconditioning (light soaking treatments) are addressed. Additionally, the inter-comparison of the degradation rates of the samples aged under three different dark test conditions (ambient, dry/heat, damp heat) reported by different groups are analyzed revealing a reasonable agreement. Finally, a logarithmic diagram for OPV lifetime associated with common time units is proposed that allows conveniently categorizing and intercomparing the stability performance of different samples aged under different test conditions. [ABSTRACT FROM AUTHOR]

The x-ray stability of photodiodes made of poly(9,9-di-n-octylfluorene-co-benzothiadiazole):perylene diimide, poly[2,7-(9,9-di-n-octylfluorene)-co-(1,4-phenylene-[(4-sec-butylphenyl)imino]-1,4-phenylene)]:perylene diimide and poly(3-hexylthiophene):([6,6]-phenylC61-butyric acid methyl ester) (P3HT:PCBM) blends has been examined up to lifetime doses equivalent to those used in medical x-ray digital imaging applications. Dark currents and external quantum efficiencies (EQEs) are not significantly affected after exposure to 500 Gy. Only in the case of P3HT:PCBM is a significant loss in EQE (17% of the initial value) observed. Possible reasons for the observed changes are proposed. When a scintillation layer is attached to the devices, a linear dependence of the photocurrent on the x-ray dose rate is observed for the three material systems. [ABSTRACT FROM AUTHOR]