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Simulating photoconductive atomic-force microscopy on disordered photovoltaic materials.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Apr2015, Vol. 91 Issue 14, p144202-1-144202-12. 12p. - Publication Year :
- 2015
-
Abstract
- We present a tool for simulating photoconductive atomic-force microscopy (Pc-AFM) on bulk heterojunction (BHJ) materials with a minimal set of empirical parameters. The simulation is a master-equation solution of a three-dimensional hopping charge transport model which includes donor-acceptor domain morphology, energetic and spatial disorder, exciton transport and splitting, charge-pair generation and recombination, and tip-substrate electrostatics. A simplifying aspect of the model is that electron transport, hole transport, and electron-hole recombination are treated as the same electron-transfer process. The model recreates realistic bulk recombination rates, without requiring short-range Coulombic effects to be calculated. We demonstrate the tool by simulating line scans of a Pc-AFM tip passing over the surface of a buried or exposed acceptor cluster in a BHJ film. The simulations confirm experimental observations that such defects can be detected by open-circuit mode Pc-AFM imaging, even when the clusters are buried below the surface. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 91
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 103549872
- Full Text :
- https://doi.org/10.1103/PhysRevB.91.144202