1. Specifics of MOCVD Formation of In[sub x]Ga[sub 1 – ][sub x]N Inclusions in a GaN Matrix.
- Author
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Soshnikov, I. P., Lundin, V. V., Usikov, A. S., Kalmykova, I. P., Ledentsov, N. N., Rosenauer, A., Neubauer, B., and Gerthsen, D.
- Subjects
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GALLIUM nitride , *METAL organic chemical vapor deposition , *HETEROSTRUCTURES , *INDIUM compounds - Abstract
MOCVD-grown heterostructures with one or several In[sub x]Ga[sub 1-x]N layers in a GaN matrix have been studied by transmission electron microscopy. In heterostructures with thick InGaN layers, a noncoherent system of domains with lateral dimensions (∼50 nm) on the order of the layer thickness (∼40 nm) is formed. In the case of ultrathin InGaN inclusions, nanodomains coherent with the GaN matrix are formed. The content of indium in nanodomains, determined by the DALI method, is as high as x ≈ 0.6 or more, substantially exceeding the average In concentration. The density of the nanodomains formed in the structures studied is n ≈ (2-5) x 10[sup 11] cm[sup -2]. In the structures with ultrathin InGaN inclusions, two characteristic nanodomain sizes are observed (3-6 and 8-15 nm). [ABSTRACT FROM AUTHOR]
- Published
- 2000
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