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Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots.
- Source :
-
Semiconductors . Apr2000, Vol. 34 Issue 4, p481. 7p. - Publication Year :
- 2000
-
Abstract
- InGaN/GaN structures with dense arrays of InGaN nanodomains were grown by metallorganic chemical vapor deposition. Lasing in vertical direction occurs at low temperatures, indicating ultrahigh gains (∼10[sup 5] cm[sup -1]) in the active region. Fabrication of an effective AlGaN/GaN distributed Bragg reflector with reflectivity exceeding 90% enables vertical lasing at room temperature in structures with a bottom distributed Bragg reflector, despite the absence of a well-reflecting upper mirror. The lasing wavelength is 401 nm, and the threshold excitation density is 400 kW/cm². [ABSTRACT FROM AUTHOR]
- Subjects :
- *SEMICONDUCTOR lasers
*HETEROSTRUCTURES
Subjects
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 34
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 7317669
- Full Text :
- https://doi.org/10.1134/1.1188011