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Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures.
- Source :
-
Technical Physics Letters . Jun99, Vol. 25 Issue 6, p462. 4p. - Publication Year :
- 1999
-
Abstract
- Lasing is discovered in the direction perpendicular to the surface in quantum-size InGaN/GaN multilayer heterostructures grown by vapor-phase epitaxy. At high excitation densities one of the modes in the luminescence spectrum, which is modulated by modes of the Fabry-Pérot cavity formed by the GaN/air and GaN/sapphire-substrate interfaces, is sharply amplified and begins to dominate the spectrum. The dependence of the luminescence intensity on pump density has a clearly expressed threshold character. The threshold excitation density in the vertical direction is 5-6 times greater than the stimulated-emission threshold for observation from an end surface of the structure. The gain coefficient in the active region at the threshold for surface-emitting lasing is estimated as 2 × 10[sup 5] cm[sup -1]. The interaction between the cavity modes and the gain spectrum is detected in the form of displacement (by up to 2.6 nm) of modes on the short-wavelength edge of the luminescence spectrum toward higher photon energies. The characteristic temperature (T[sub 0]) measured in the range from 16 to 120 K is 480 K. At higher temperatures T[sub 0] = 70 K. [ABSTRACT FROM AUTHOR]
- Subjects :
- *LASERS
*HETEROSTRUCTURES
*INTERFACES (Physical sciences)
Subjects
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 25
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 7326579
- Full Text :
- https://doi.org/10.1134/1.1262517