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The n+-InAs/n0-InAs1 –ySby/p-InAsSbP heterostructures with asymmetric band offsets at the heteroboundaries of the active region have been grown by vapor-phase epitaxy from organometallic compounds on InAs substrates. The forward branch of the current–voltage characteristics of the obtained heterostructures at low temperatures has segments with the tunneling conduction. The energy-band diagram of the double InAs/InAs1 –ySby/InAsSbP heterostructure is calculated in the range of compositions (y < 0.2) of the narrow-gap active region. The InAs1 –ySby/InAsSbP heterojunction is shown to be a II type heterojunction in this composition range. The electroluminescence observed in the experiment for the n+-InAs/n0-InAs1 ‒ySby/p-InAsSbP heterostructures with the active region in compositions y > 0.14 is due to interface radiative transitions with participation of localized hole states at the II type heteroboundary. [ABSTRACT FROM AUTHOR]

We report on the electroluminescent and I–V characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by metalorganic vapor-phase epitaxy. In the spectral range of 0.23–0.29 eV, the high-intensity electroluminescence at a temperature of T = 77 K has been observed. The position of the maximum of the main emission band ( ~ 0.24 eV) has shown a noticeable blue shift with increasing forward bias. Based on the investigations, a conclusion about the existence of a type-II staggered heterojunction at the InAs0.84Sb0.16/InAs0.32Sb0.28P0.40 heterointerface has been drawn, which is confirmed by the calculated energy band diagram. [ABSTRACT FROM AUTHOR]

Asymmetric n-InAs/InAs(1 –y)Sby/p-InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated. [ABSTRACT FROM AUTHOR]

The electroluminescent characteristics of the InAs/InAs1–ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y > 0.09) in the temperature range 4.2–300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1–4.2 μm at low temperatures (T < 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered. [ABSTRACT FROM AUTHOR]

Uniform arrays of the InSb quantum dots with a surface density of nQD = 2 × 109 cm–2 were obtained by liquid phase epitaxy on a matrix layer based on a multicomponent InGaAsSb solid solution lattice-matched with the GaSb substrate. The change in the composition of the cationic part of the matrix by using the epitaxial matrix layer allowed to lower the temperature of the epitaxy to T = 430°C and determined the shape of a typical InSb quantum dot in the form of a truncated cone with average values of height h = 3 nm and diameter d = 30 nm, which corresponded to the aspect ratio L = h/d = 0.1. [ABSTRACT FROM AUTHOR]

A study of the electroluminescence of asymmetric InAs/InAs1 – ySby/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–300 K is reported. It is found on the basis of experimental data that a staggered type-II heterojunction is formed at the InAs1 – ySby/InAs0.41Sb0.28P0.40 heterointerface. It is shown that interfacial radiative transitions at the type-II heterointerface make a dominant contribution in the temperature range of 4.2–180 K. This enables minimization of the temperature dependence of the operating wavelength of a light-emitting diode. [ABSTRACT FROM AUTHOR]

The design and technology for the fabrication of an asymmetric stepped InAs/InAs1 –ySby/InAsSbP heterostructure with an ultimate InSb content (up to y = 0.17) in the narrow-gap active region by vapor-phase epitaxy from metal-organic compounds are developed. The electroluminescence characteristics of long-wavelength LEDs based on the proposed heterostructure, which emits in the spectral range of 4.6–5.3 μm, are studied. A linear decrease in the quantum efficiency of the electroluminescence with increasing InSb content in the active layer of the LEDs obtained is revealed. The advantage of using the asymmetric heterostructure for fabricating LEDs with a working wavelength of more than 4.5 μm is shown. [ABSTRACT FROM AUTHOR]