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Your search keyword '"Cavallini, A."' showing total 2 results

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2 results on '"Cavallini, A."'

1. Role of impurities on diffusion-induced defective states.

Author

Castaldini, A., Cavallini, A., Fraboni, B., and Giannotte, E.

Subjects
*SILICON, *DIFFUSION, *ELECTRON beams, *ALUMINUM, *GEOMETRY
Abstract

Investigates the defective states induced in floating zone silicon by the heavy diffusion of dopants by means of the electron beam-induced current (EBIC) method. Evolution of the electrical and morphological properties of the induced defects; Role of aluminum in the electrical activity of bulk defective states; Sample mounting geometries utilized for EBIC analyses.

Published
1992
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2. Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles.

Author

Cavalcoli, D., Cavallini, A., and Castaldini, A.

Subjects
*DIFFUSION, *SILICON, *CONFIGURATIONS (Geometry)
Abstract

Presents a study which obtained the diffusion length of minority in n-type floating-zone silicon samples with the electron-beam-induced current technique in planar configuration. Background on the moment method; Experimental procedures; Results of the study.

Published
1991
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