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Several miniaturized viscometers, or microviscometers, have been developed exploiting numerous rapid prototyping techniques. Among them, paper microstrips, famously known as microfluidic paper-based analytical devices ($\mu $ PADs), have become popular due to their cost-efficacy, simple fabrication, fast response, and easily disposable. Many fabrication methods are existing to develop paper microstrips. Herein, an alternative fabrication method is proposed where fused deposition modeling (FDM)-based 3-D printer (3DP) has been employed using polycaprolactone (PCL) filament. F, image processing has been utilized to measure viscosity in such microfluidic domain. Viscosity was calculated by measuring the time taken by the fluid to cover a fixed length between two spots in the microchannel based on the programed and color-coded regions-of-interest. The image processing program was developed considering the change in the gray scale in the virtual region of interests (ROIs) in the microchannel during the fluid flow in the paper microstrips. A 3-D printed handheld platform, containing raspberry pi with on-board camera and display, was developed to execute the image processing and automate the entire work flow. In the proposed device, the accuracy was measured to be >92%. [ABSTRACT FROM AUTHOR]

We report on investigation of the mechanical properties of paper electronics (printed and made out of paper). One key objective of such paper electronics is to achieve ultraflexibility. Therefore, it is important to understand electrical functionality and reliability of paper electronics under various physical (mechanical) deformations. Here, we show the general mechanical properties of the cellulose paper used and its electrical behavior under applied strain, tackling the main effects that need to be identified when building paper-based systems, from product performance and stability perspective. An overview of the stress–strain behavior of silver ink on paper is discussed, and then, we tackle a more specific analysis of the performance variations of paper sensors made with recyclable household materials when exposed to various mechanical conditions of tensile and compressive bending. This paper is important for developing stable wearable sensors for incorporation into Internet of Everything applications. [ABSTRACT FROM PUBLISHER]

The electrophoretic display (EPD) is the main solution to electronic papers, but most of them can display the image or text in black and white particles only. The users may prefer the EPD showing multiple colors rather than the black/white content only. In this paper, we introduce the driving system for a color EPD, which is composed of three kinds of particles. The system aims at optimizing the visual quality based on a new driving waveform by equipping with an optimization method for color and tone reproduction. The experimental result shows that the proposed EPD driving system can display three-color pictures with promising visual quality. [ABSTRACT FROM AUTHOR]

Describes the above-named upcoming special issue or section. May include topics to be covered or calls for papers. [ABSTRACT FROM AUTHOR]

Oxide-based thin-film transistors (TFTs) with a lateral in-plane electrode are self-assembled on paper substrates, and the electrical modulation effect of the in-plane electrode is investigated. A \SiO2-based solid-electrolyte film with high specific capacitance is used as the gate dielectric, and the operation voltage is reduced to less than 2.0 V. The threshold voltage (Vth) of such paper TFTs is tuned from -0.98 to 0.94 V by different voltage biases on the in-plane electrode. The threshold voltage shift (\Delta Vth) can be described by \Delta Vth = -(CG2/CG1)VG2, where CG2 and CG1 are the in-plane electrode and bottom-gate specific capacitance values. High electrical performance with a current on/off ratio of \6 \times \10^5 \sim \10^6, a subthreshold swing of 0.14 \sim 0.19 V/dec, and a mobility of \8.64 \sim \9.45\ \cm^2/\V\cdot \s is obtained at different in-plane electrode voltage biases. Such low-voltage paper TFTs are promising for low-cost and portable electronics. [ABSTRACT FROM PUBLISHER]

We demonstrate edge electron emission from flexible free-standing graphene paper (GP). The turn-on field is measured at 2.2 V/ \mum , and the maximum emission current density at 3 A/cm^2 . The field emission properties of GP can be optimized by adjusting the thickness and annealing temperature. Because it is flexible, it can be shaped into different forms to meet the requirements of specific applications. The electron beam shape can range from a sheet electron beam to a cylindrical (hollow) electron beam. [ABSTRACT FROM AUTHOR]

Alternating-current-type inorganic powder electroluminescence (PEL) devices were successfully fabricated on four kinds of paper substrates, i.e., glossy paper, sticker paper, magazine paper, and newspaper. To protect the paper from wet chemical and heating processes during the formation of the PEL device, the paper substrate was coated with a spin-on-glass layer that served as a buffer layer. In spite of the fragility of paper, quite satisfactory results were obtained--the performance of paper-based PEL devices was almost equivalent to that of PEL devices on a plastic substrate. Extension of a substrate to paper, even to flimsy daily newspaper, will widen the opportunity of PEL devices as one of flexible and disposable displays. [ABSTRACT FROM AUTHOR]

Describes the above-named upcoming special issue or section. May include topics to be covered or calls for papers. [ABSTRACT FROM AUTHOR]

Microporous SiO2 can provide large electric-doublelayer (EDL) capacitance and negligible leakage current, owing to lack of electron carrier and limited mobility of mobile ions. The impedance spectroscopy (ionic-conductivity--frequency and capacitance--voltage characteristics) and Fourier-transformed infrared spectroscopy of microporous SiO2 are characterized, which demonstrated that such dielectric is actually a solid-electrolyte dielectric. InGaZnO4 thin-film transistors (TFTs) on paper substrates gated by microporous-SiO2 solid electrolyte are fabricated at roomtemperature.The largeEDL-specific capacitance (1.36 µF/ cm²) results in the paper TFTs operate at a battery-drivable low voltage of 1.0 V. Both depletion-mode (Vth = .0.45 V) and enhancement-mode (Vth = 0.25 V) operations are realized by rationally controlling the oxygen concentration in argon ambient during InGaZnO4 channel deposition. Electrical characteristics with an equivalent field-effect mobility of ~21 cm²/V ⋅ s, a current ON/OFF ratio of greater than 105, and a subthreshold swing of ~80 mV/dec are demonstrated at low frequencies, which are promising for portable paper electronics. [ABSTRACT FROM AUTHOR]

This paper provides an industry perspective on the present state of compact models for MOS transistors. It highlights the complexity of layout-dependent effects in modern transistors, reviews some common misunderstandings of MOS transistor capacitances, and introduces a new, structurally symmetric, “gate-as-input” equivalent network for these capacitances. Areas of focus for the future model developments are also proposed. [ABSTRACT FROM AUTHOR]

A novel vertical architecture for all-printed organic electrochemical transistors, based on poly(3, 4-ethylenedioxythiophene):poly(styrene sulfonate), realized on flexible substrates, is reported. The transistors are manufactured along both faces of plastic or paper substrates and via connections are realized using laser ablation or simple punch through using a pin. Successful modulation of the electric current that flows between the two sides of the substrate is achieved using electrolyte-gating and electrochemical modulation of the electronic charge transport of the bulk of the transistor channel. In addition to this, the transistors are exhibiting fast switching and high ON/OFF current ratios. [ABSTRACT FROM AUTHOR]

The article offers information of Technology Computer-Aided Design (TCAD) which refers to the use of computer simulations to develop and optimize semiconductor process technologies and devices.

An electrophoretic display (EPD) cell with a triple-layered microcavity structure was fabricated using a convenient dry film resist. The inherent structural advantage arising from the function of the middle channel layer as a background colored state enabled the EPD to operate with two different-colored states by using a single type of electronic-ink particles, thereby eliminating the possible agglomeration of oppositely charged ink particles and supporting the potential application of the proposed structure to color the electronic paper. The preliminary operation of this new EPD structure was demonstrated as white and blue display states on a rigid glass exhibiting a contrast ratio of 1.5 : 1 with saturation voltages of +30 and -30 V, respectively. Successful demonstrations on both the indium–tin–oxide-patterned glass and flexible polyethylene substrates are also provided. [ABSTRACT FROM AUTHOR]

An introduction is presented in which the editor discusses articles in the issue on topics including IEEE Transactions on Electron Devices on New simulation methodologies for next-generation TCAD tools, and large-scale simulations.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers. [ABSTRACT FROM AUTHOR]

During the past few years, we have seen an increasing number of submissions of “physics-based simulation only” papers to the IEEE TRANSACTIONS ON ELECTRON DEVICES (T-ED). The popularity of such papers may be explained by the fact that the present widespread technology computer-aided design (TCAD) tools are a significant and welcome boost to creativity in the electronic device community. In fact, TCAD tools allow researchers to explore and optimize device structures without being burdened by technology concerns in terms of availability, cost, and time delay. [ABSTRACT FROM AUTHOR]

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers. [ABSTRACT FROM AUTHOR]

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers. [ABSTRACT FROM AUTHOR]

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers. [ABSTRACT FROM AUTHOR]

This Special Issue of the IEEE Transactions on Electron Devices will feature the most recent developments and the state of the art in the field of ultra wide band gap semiconductors and devices for power control and conversion, including both experimental results and theoretical developments. Papers must be new and present original material that has not been copyrighted, published or accepted for publications in any other archival publications, that is not currently being considered for publications elsewhere, and that will not be submitted elsewhere while under considerations by the Transactions on Electron Devices. Topics of interest include, but are not limited to: IDtra Wide Band Gap Materials: Advances in material synthesis, defect characterization, transport and high-field properties, and material-level integration; evaluation of fundamental materials-limited figures of merit; Power Devices: Vertical and lateral MOSFETs, HEMTs and MIS-HEMTs, IGBTs, Schottky and pn junction rectifiers, and other device concepts; fabrication and device characterization; designs and device structures for controlling field profiles, edge termination; Thermal Management: Approaches to mitigate thermal effects in power devices using ultra wide band gap materials; Integration: Monolithic and heterogenous integration for system-level applications using ultra wide band gap materials. Integration with Si or other semiconductors for system-on-chip and system-in-package implementations, including heterogenous and package-level integration for high-performance power conversion applications. [ABSTRACT FROM AUTHOR]

Since 2017, the IEEE Transactions on Electron Devices (TED) has published a selection of extended versions of papers presented at the Symposia on VLSI Technology and Circuits held in the corresponding years (vol. 64, no. 10; vol. 65, no. 11; vol. 66, no. 12). Since 2018, the papers have been collected in a Special Section of TED titled “Papers from Symposium on VLSI Technology.” This initiative, which was the result of a fruitful cooperation between the Electron Device Society and the VLSI Symposium chairs and committees, has brought to TED a number of carefully selected (by the VLSI TPC first and then through the TED usual review process), high-quality submissions. We have been able to continue this cooperation also in this difficult 2020, and we are therefore happy to announce the publication in the December issue (Vol. 67, No. 12) of a Special Section on papers from the 2020 Symposium, held virtually on June 15–19, 2020. A special thanks to the Guest Editors of the section, Peide Ye, Purdue University (Publication Chair, 2020 VLSI Symposium), and Masaharu Kobayashi, The University of Tokyo, Japan (Publication Co-Chair, 2020 VLSI Symposium). [ABSTRACT FROM AUTHOR]

A high-resolution active-matrix microencapsulated electrophoretic display (EPD) driven by polycrystalline-silicon thin-film transistors (poly-Si TFTs) with integrated drivers has been developed for the first feasibility study of electronic paper. The poly-Si TFTs were fabricated with a low temperature process below 425 °C. Microencapsulated electrophoretic material was coated on the TFT backplane, which was driven at 18 V. The resolution of the display is quarter VGA (video graphics array), and pixel pitch is 131 ppi (pixels per inch). As a result, this display offers a wide viewing angle, high contrast ratio and nonvolatilization of data. In addition, four-level grayscale images were also achieved by using an area ratio grayscale (ARG) driving method. [ABSTRACT FROM AUTHOR]

Describes the above-named upcoming special issue or section. May include topics to be covered or calls for papers. [ABSTRACT FROM AUTHOR]

The article highlights call for papers from Ieee Transactions on Electron Devices on several topics including advanced transistors; gate dielectrics; and power devices.

This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. This paper demonstrates the 555-timer integrated circuits (ICs) characterization in both astable and monostable modes of operation, with a supply voltage of 15 V over the wide temperature range of 25 °C–500 °C. Nonmonotonic temperature dependence was observed for the 555-timer IC frequency, rise time, fall-time, and power dissipation. [ABSTRACT FROM AUTHOR]

The article offers information on electronics devices, complementary metal–oxide–semiconductor (CMOS) logic, power and memory. Topics discussed include electronics devices with features related to experimental results and theoretical model; include advanced transitory with features of self-heating effect and variability; and discusses power devices like the metal–oxide–semiconductor field-effect transistor (MOSFET) and insulated-gate bipolar transistor (IGBT).

The article invites, papers from authors for a special issue of the journal "IEEE Transactions on Electron Devices" on "Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices."

The article presents the invitation of the journal to interested individuals to submit papers and articles on memory, logic and CMOS devices.

Describes the above-named upcoming special issue or section. May include topics to be covered or calls for papers. [ABSTRACT FROM AUTHOR]

Describes the above-named upcoming special issue or section. May include topics to be covered or calls for papers. [ABSTRACT FROM AUTHOR]

Describes the above-named upcoming special issue or section. May include topics to be covered or calls for papers. [ABSTRACT FROM AUTHOR]

The article presents invitation for posters and papers for the 2013 IEEE International Reliability Physics Symposium (IRPS) to be held in Monterey, California from April 14-18, 2013. Among the areas where papers should be focused include electronic systems, automotive reliability, and circuit aging simulation. It notes the awards to be given by IRPS including Outstanding Paper, Best Student Talk, Best Poster, and Best Paper.

Describes the above-named upcoming special issue or section. May include topics to be covered or calls for papers. [ABSTRACT FROM AUTHOR]

Flexible, highly sensitive, easy fabricating process, low-cost pressure sensors are the trend for flexible electronic devices. Despite the tremendous progress in recent years, it is still challenging to prepare pressure sensors with high sensitivity, high stability, and fast responsiveness. In this study, we report a simple and low-cost method for the preparation of novel pressure sensors. Inspired by the pomegranate structure, a 3-D porous structure consisting of polystyrene (PS) microspheres filled with reduced graphene oxide (rGO) paper is proposed. This pressure sensor has high linear sensitivity (1.41 kPa−1 in the pressure range of 0–50 kPa), high stability (1000 cycles), and quick response time (~20 ms). Furthermore, a robotic arm interacting control system based on pressure sensor arrays is constructed, which demonstrates the far-reaching potential of pressure sensors in human–machine interaction. Therefore, this work provides a low-cost and effective method for preparing high linear sensitivity pressure sensors. [ABSTRACT FROM AUTHOR]

We have fabricated fully transparent high performance flexible nickel-doped zinc oxide thin-film transistors (NZO TFTs) on flexible plastic substrates using magnetron sputtering. The effects of active layer thickness on the performance of NZO TFTs was investigated. We found that the channel layer thickness has a notable influence on the characteristics of NZO TFTs. The electrical characteristics of NZO TFTs reached the optimization when the active channel layer thickness was 71 nm, with a low off-current lower than 1 pA, a high on/off drain current ratio of 2.1 \times 10^9 , a high saturation mobility of 27.5 cm ^2\cdot \mathrm V^-1\cdot \mathrm s^-1 , a steeper subthreshold swing of 67 mV/decade, and a low threshold voltage of 1.88 V. It is demonstrated that NZO is a promising active channel layer materials for future transparent flexible displays. [ABSTRACT FROM AUTHOR]

The article talks about the reliability of electronic devices as an issue for technology, impact of Bias Temperature Instability on CMOS logic devices and evolving Hot Carrier Degradation and Self Heating Effect. It talks about degradation of program window, development in the field of device reliability and topics that includes Advanced Transistors, Gate Dielectrics and Memory Devices.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers. [ABSTRACT FROM AUTHOR]

Over the past 10 years, 3-dimensional (3-D) wafer-level stacked backside Illuminated (BSI) CMOS image sensors (CISs) have undergone rapid progress in development and performance and are now in mass production. This review paper covers the key processes and technology components of 3-D integrated BSI devices, as well as results from early devices fabricated and tested in 2007 and 2008. This article is divided into three main sections. covers wafer-level bonding technology. covers the key wafer fabrication process modules for BSI 3-D wafer-level stacking. presents the device results. [ABSTRACT FROM AUTHOR]

We demonstrate that the residual carbon concentration in the drift region can have a significant impact on the reverse leakage, breakdown voltage, and breakdown stability of GaN-on-GaN vertical diodes. Two generations (Gen1, Gen2) of polarization-doped p-n junctions with different C concentrations were compared, in terms of avalanche voltage, avalanche instability, and deep-level concentration. The original results collected within this paper show that: 1) both generations of devices can safely reach the avalanche regime; diodes with a lower residual CN have a higher reverse leakage and a lower avalanche voltage, due to an uneven distribution of the electric field; 2) the presence of residual carbon can lead to breakdown walkout, i.e. a recoverable increase in breakdown voltage under reverse-bias stress. Specifically, devices with higher C concentration show a fully-recoverable breakdown walkout, whereas the breakdown voltage is stable in devices with lower C concentration; and 3) steady-state photocapacitance measurements confirm the presence of CN in both generations, and are used to assess the relative difference in concentration between Gen1 and Gen2, even for levels below secondary ion mass spectroscopy (SIMS) sensitivity. The results described in this paper indicate the existence of a trade-off between breakdown voltage (increasing by improving compensation) and breakdown stability (improving by reducing CN concentration) and are of fundamental importance for the optimization of GaN power devices. [ABSTRACT FROM AUTHOR]

A call for papers for 2014 IEEE International Reliability Physics Symposium on topics related to circuits and products and devices process and materials reliability.

A Special Section in the IEEE Transactions on Semiconductor Manufacturing, May 2014: After nearly three decades of research and development, wide band gap semiconductors (e.g. SiC and GaN) are ripe for high-volume applications in power electronics, communication, sensors, solid-state lighting, and photovoltaics. However, there are significant manufacturing challenges that must be overcome before large-scale manufacturing can take place. Fundamental issues pertaining to high defect density in the material, proper yield estimation and metrology techniques, and focus on "applications-driven" manufacturing are essential in order to advance the manufacturing of wide band gap (WBG) semiconductors. The IEEE Transactions on Semiconductor Manufacturing solicits original papers addressing the challenges and opportunities in manufacturing ofWBG semiconductor devices. Deadline for Receipt of Papers is July 31, 2013. [ABSTRACT FROM AUTHOR]

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers. [ABSTRACT FROM PUBLISHER]

Technology computer-aided design (TCAD) is an integral part of the development process of semiconductor technologies and devices, a field which has become increasingly complex and heterogeneous. Processing of integrated circuits requires nowadays over 400 process steps, and the resulting devices often have an intricate 3-D structure and contain various specifically designed materials. The full device behavior can only be understood by considering effects on all length scales from atomistic (material properties, interfaces, defects, and so on), to nanometric (quantum confinement, non-bulk properties, tunneling, ballistic transport, and so on), to full-chip dimensions (strain, heat transport, and so on), and time scales from femtoseconds (scattering, ferroelectric switching time, and so on) to seconds (trapping times, degradation, and so on). Voltages, currents, and charges have been scaled to such low levels that statistical effects and process variations have a strong impact. Devices based on new materials (e.g., 2-D crystals) and physical principles (ferroelectrics, magnetic materials, qubits, and so on) challenge standard TCAD approaches. While the simulation methods developed by the physics community can describe the basic device behavior, they often lack important simulation capabilities like, for example, transient simulations or integration with other TCAD tools, and are often too slow for daily use. Due to the complexity of semiconductor technology, it becomes more and more difficult to assess the impact of a change in processing or device structure on circuit performance by looking at a single aspect of an isolated device under idealized conditions. Instead, a TCAD tool chain is required which can handle realistic device structures embedded in a chip environment. New methodologies are required for all aspects of TCAD to ensure an efficient tool chain covering from atomistic effects to circuit behavior based on flexible simulation models that can handle new materials, device principles, and the ensuing large-scale simulations and that make use of artificial intelligence for well-chosen (sub)routines to decrease the overall simulation time. This Special Issue features six invited and 18 regular papers that address these problems. [ABSTRACT FROM AUTHOR]