Compact Models for MOS Transistors: Successes and Challenges.

This paper provides an industry perspective on the present state of compact models for MOS transistors. It highlights the complexity of layout-dependent effects in modern transistors, reviews some common misunderstandings of MOS transistor capacitances, and introduces a new, structurally symmetric, “gate-as-input” equivalent network for these capacitances. Areas of focus for the future model developments are also proposed. [ABSTRACT FROM AUTHOR]