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Phosphatidylinositol 4-kinase IIIα (PI4KIIIα/PI4KA/OMIM:600286) is a lipid kinase generating phosphatidylinositol 4-phosphate (PI4P), a membrane phospholipid with critical roles in the physiology of multiple cell types. PI4KIIIα's role in PI4P generation requires its assembly into a heterotetrameric complex with EFR3, TTC7 and FAM126. Sequence alterations in two of these molecular partners, TTC7 (encoded by TTC7A or TCC7B) and FAM126, have been associated with a heterogeneous group of either neurological (FAM126A) or intestinal and immunological (TTC7A) conditions. Here we show that biallelic PI4KA sequence alterations in humans are associated with neurological disease, in particular hypomyelinating leukodystrophy. In addition, affected individuals may present with inflammatory bowel disease, multiple intestinal atresia and combined immunodeficiency. Our cellular, biochemical and structural modelling studies indicate that PI4KA-associated phenotypical outcomes probably stem from impairment of PI4KIIIα-TTC7-FAM126's organ-specific functions, due to defective catalytic activity or altered intra-complex functional interactions. Together, these data define PI4KA gene alteration as a cause of a variable phenotypical spectrum and provide fundamental new insight into the combinatorial biology of the PI4KIIIα-FAM126-TTC7-EFR3 molecular complex.

The depth-dependent recovery of silicon thermal conductivity was achieved after the recrystallization of silicon that had been partially amorphized due to ion implantation. Transmission electron microscopy revealed nanoscale amorphous pockets throughout a structurally distorted band of crystalline material. The minimum thermal conductivity of as-implanted composite material was 2.46 W m−1 K−1 and was found to be uniform through the partially amorphized region. X-ray diffraction measurements reveal 60% strain recovery of the crystalline regions after annealing at 450 °C for 30 min and almost full strain recovery and complete recrystallization after annealing at 700 °C for 30 min. In addition to strain recovery, the amorphous band thickness reduced from 240 to 180 nm after the 450 °C step with nanoscale recrystallization within the amorphous band. A novel depth-dependent thermal conductivity measurement technique correlated thermal conductivity with the structural changes, where, upon annealing, the low thermal conductivity region decreases with the distorted layer thickness reduction and the transformed material shows bulk-like thermal conductivity. Full recovery of bulk-like thermal conductivity in silicon was achieved after annealing at 700 °C for 30 min. After the 700 °C anneal, extended defects remain at the implant projected range, but not elsewhere in the layer. Previous results showed that high point-defect density led to reduced thermal conductivity, but here, we show that point defects can either reform into the lattice or evolve into extended defects, such as dislocation loops, and these very localized, low-density defects do not have a significant deleterious impact on thermal conductivity in silicon. [ABSTRACT FROM AUTHOR]

Optogenetics uses light to control and observe the activity of neurons, often using a focused laser beam. As brain tissue is a scattering medium, beams are distorted and spread with propagation through neural tissue, and the beam's degradation has important implications in optogenetic experiments. To address this, we present an analysis of scattering and loss of intensity of focused laser beams at different depths within the brains of zebrafish larvae. Our experimental set-up uses a 488 nm laser and a spatial light modulator to focus a diffraction-limited spot of light within the brain. We use a combination of experimental measurements of back-scattered light in live larvae and computational modelling of the scattering to determine the spatial distribution of light. Modelling is performed using the Monte Carlo method, supported by generalised Lorenz-Mie theory in the single-scattering approximation. Scattering in areas rich in cell bodies is compared to that of regions of neuropil to identify the distinct and dramatic contributions that cell nuclei make to scattering. We demonstrate the feasibility of illuminating individual neurons, even in nucleus-rich areas, at depths beyond 100 μm using a spatial light modulator in combination with a standard laser and microscope optics.

Aluminum scandium alloys and their intermetallic phases have arisen as potential candidates for the next generation of electrical interconnects. In this work, we measure the in-plane thermal conductivity and electron–phonon coupling factor of aluminum scandium alloy thin films deposited at different temperatures, where the temperature is used to control the grain size and volume fraction of the Al3Sc intermetallic phase. As the Al3Sc intermetallic formation increases with higher deposition temperature, we measure increasing in-plane thermal conductivity and a decrease in the electron–phonon coupling factor, which corresponds to an increase in grain size. Our findings demonstrate the role that chemical ordering from the formation of the intermetallic phase has on thermal transport. [ABSTRACT FROM AUTHOR]

Since the time of their introduction, optical tweezers (OTs) have grown to be a powerful tool in the hands of biologists. OTs use highly focused laser light to guide, manipulate, or sort target objects, typically in the nanoscale to microscale range. OTs have been particularly useful in making quantitative measurements of forces acting in cellular systems; they can reach inside living cells and be used to study the mechanical properties of the fluids and structures that they contain. As all the measurements are conducted without physically contacting the system under study, they also avoid complications related to contamination and tissue damage. From the manipulation of fluorescent nanodiamonds to chromosomes, cells, and free-swimming bacteria, OTs have now been extended to challenging biological systems such as the vestibular system in zebrafish. Here, we will give an overview of OTs, the complications that arise in carrying out OTs in vivo, and specific OT methods that have been used to address a range of otherwise inaccessible biological questions.

The thermal properties of semiconductors following exposure to ion irradiation are of great interest for the cooling of electronic devices; however, gradients in composition and structure due to irradiation often make the measurement difficult. Furthermore, the nature of spatial variations in thermal resistances due to spatially varying ion irradiation damage is not well understood. In this work, we develop an advancement in the analysis of time-domain thermoreflectance to account for spatially varying thermal conductivity in a material resulting from a spatial distribution of defects. We then use this method to measure the near-surface (≲ 1 μ m) thermal conductivity of silicon wafers irradiated with Kr+ ions, which has an approximate Gaussian distribution centered 260 nm into the sample. Our numerical analysis presented here allows for the spatial gradient of thermal conductivity to be extracted via what is fundamentally a volumetric measurement technique. We validate our findings via transmission electron microscopy, which is able to confirm the spatial variation of the sub-surface silicon structure, and provide additional insight into the local structure resulting from the effects of ion bombardment. Thermal measurements found the ion stopping region to have a nearly 50 × reduction in thermal conductivity as compared to pristine silicon, while TEM showed the region was not fully amorphized. Our results suggest this drastic reduction in silicon thermal conductivity is primarily driven by structural defects in crystalline regions along with boundary scattering between amorphous and crystalline regions, with a negligible contribution being due to implanted krypton ions themselves. [ABSTRACT FROM AUTHOR]

Gold–germanium (Au x Ge 1 − x ) solid solutions have been demonstrated as highly sensitive thin film thermometers for cryogenic applications. However, little is known regarding the performance of the films for thicknesses less than 100 nm. In response, we report on the resistivity and temperature coefficient of resistance (TCR) for sputtered films with thicknesses ranging from 10 to 100 nm and annealed at temperatures from 22 to 200 ° C. The analysis is focused upon composition x = 0.17 , which demonstrates a strong temperature sensitivity over a broad range. The thinnest films are found to provide an enhancement in TCR, which approaches 20% K − 1 at 10 K. Furthermore, reduced anneal temperatures are required to crystallize the Ge matrix and achieve a maximum TCR for films of reduced thickness. These features favor the application of ultra-thin films as high-sensitivity, on-device thermometers in micro- and nanolectromechanical systems. [ABSTRACT FROM AUTHOR]

Abstract The visual pathway is tasked with processing incoming signals from the retina and converting this information into adaptive behavior. Recent studies of the larval zebrafish tectum have begun to clarify how the 'micro-circuitry' of this highly organized midbrain structure filters visual input, which arrives in the superficial layers and directs motor output through efferent projections from its deep layers. The new emphasis has been on the specific function of neuronal cell types, which can now be reproducibly labeled, imaged and manipulated using genetic and optical techniques. Here, we discuss recent advances and emerging experimental approaches for studying tectal circuits as models for visual processing and sensorimotor transformation by the vertebrate brain.

In this study, we report on the thermal conductivity of amorphous carbon generated in diamond via nitrogen ion implantation (N 3 + at 16.5 MeV). Transmission electron microscopy techniques demonstrate amorphous band formation about the longitudinal projected range, localized approximately 7 μ m beneath the sample surface. While high-frequency time-domain thermoreflectance measurements provide insight into the thermal properties of the near-surface preceding the longitudinal projected range depth, a complimentary technique, steady-state thermoreflectance, is used to probe the thermal conductivity at depths which could not otherwise be resolved. Through measurements with a series of focusing objective lenses for the laser spot size, we find the thermal conductivity of the amorphous region to be approximately 1.4 W m − 1 K − 1 , which is comparable to that measured for amorphous carbon films fabricated through other techniques. [ABSTRACT FROM AUTHOR]

Nanomultilayers are complex architectures of materials stacked in sequence with layer thicknesses in the nanometer range. Their application in microelectronics is challenged by their thermal stability, conductivity, and interface reactivity, which can compromise their performance and usability. By using different materials as thermal barriers and by changing their thickness, it is possible to manipulate interfacial effects on thermal transport. In this work, we report on the thermal conductivity of Cu/W, Cu/Ta, and Cu/TaN sputter deposited nanomultilayers with different thicknesses. The resistive interfacial effects are rationalized and discussed also in relation to the structural transformation into a nano-composite upon high-temperature annealing. [ABSTRACT FROM AUTHOR]

Germanium–antimony–telluride has emerged as a nonvolatile phase change memory material due to the large resistivity contrast between amorphous and crystalline states, rapid crystallization, and cyclic endurance. Improving thermal phase stability, however, has necessitated further alloying with optional addition of a quaternary species (e.g., C). Here, the thermal transport implications of this additional species are investigated using frequency-domain thermoreflectance in combination with structural characterization derived from x-ray diffraction and Raman spectroscopy. Specifically, the room temperature thermal conductivity and heat capacity of (Ge 2 Sb 2 Te 5) 1 − x C x are reported as a function of carbon concentration (x ≤ 0.12) and anneal temperature (T ≤ 350 ° C) with results assessed in reference to the measured phase, structure, and electronic resistivity. Phase stability imparted by the carbon comes with comparatively low thermal penalty as materials exhibiting similar levels of crystallinity have comparable thermal conductivity despite the addition of carbon. The additional thermal stability provided by the carbon does, however, necessitate higher anneal temperatures to achieve similar levels of structural order. [ABSTRACT FROM AUTHOR]