379 results on '"Pulsed substrate bias"'
Search Results
2. Influence of pulsed-substrate bias duty cycle on the microstructure and defects of cathodic arc-deposited Ti1-xAlxN coatings
- Author
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Salamania, J., Johnson, L.J.S., Schramm, I.C., Calamba, K.M., Boyd, R., Bakhit, B., Rogström, L., and Odén, M.
- Published
- 2021
- Full Text
- View/download PDF
3. A tailored pulsed substrate bias voltage deposited (a-C: Nb) thin-film coating on GTD-450 stainless steel: Enhancing mechanical and corrosion protection characteristics
- Author
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Khamseh, Sara, Alibakhshi, Eiman, Ramezanzadeh, Bahram, and Ganjaee Sari, Morteza
- Published
- 2021
- Full Text
- View/download PDF
4. Preparation of nickel-containing conductive amorphous carbon films by magnetron sputtering with negative high-voltage pulsed substrate bias
- Author
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Solovyev, A.A., Oskomov, K.V., Grenadyorov, A.S., and Maloney, P.D.
- Published
- 2018
- Full Text
- View/download PDF
5. Low temperature growth of stress-free single phase α-W films using HiPIMS with synchronized pulsed substrate bias.
- Author
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Shimizu, Tetsuhide, Takahashi, Kazuki, Boyd, Robert, Viloan, Rommel Paulo, Keraudy, Julien, Lundin, Daniel, Yang, Ming, and Helmersson, Ulf
- Subjects
- *
MAGNETRON sputtering , *TUNGSTEN , *LOW temperatures , *KRYPTON , *HEAT resistant materials , *CRYSTAL texture , *TUNGSTEN alloys - Abstract
Efficient metal-ion-irradiation during film growth with the concurrent reduction of gas-ion-irradiation is realized for high power impulse magnetron sputtering by the use of a synchronized, but delayed, pulsed substrate bias. In this way, the growth of stress-free, single phase α-W thin films is demonstrated without additional substrate heating or post-annealing. By synchronizing the pulsed substrate bias to the metal-ion rich portion of the discharge, tungsten films with a ⟨110⟩ oriented crystal texture are obtained as compared to the ⟨111⟩ orientation obtained using a continuous substrate bias. At the same time, a reduction of Ar incorporation in the films are observed, resulting in the decrease of compressive film stress from σ = 1.80–1.43 GPa when switching from continuous to synchronized bias. This trend is further enhanced by the increase of the synchronized bias voltage, whereby a much lower compressive stress σ = 0.71 GPa is obtained at Us = 200 V. In addition, switching the inert gas from Ar to Kr has led to fully relaxed, low tensile stress (0.03 GPa) tungsten films with no measurable concentration of trapped gas atoms. Room-temperature electrical resistivity is correlated with the microstructural properties, showing lower resistivities for higher Us and having the lowest resistivity (14.2 μΩ cm) for the Kr sputtered tungsten films. These results illustrate the clear benefit of utilizing selective metal-ion-irradiation during film growth as an effective pathway to minimize the compressive stress induced by high-energetic gas ions/neutrals during low temperature growth of high melting temperature materials. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF
6. Influence of pulsed-substrate bias duty cycle on the microstructure and defects of cathodic arc-deposited Ti1-xAlxN coatings
- Author
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Salamania, Janella, Johnson, Lars, Schramm, I. C., Calamba, K. M., Boyd, Robert, Bakhit, Babak, Rogström, Lina, Odén, Magnus, Salamania, Janella, Johnson, Lars, Schramm, I. C., Calamba, K. M., Boyd, Robert, Bakhit, Babak, Rogström, Lina, and Odén, Magnus
- Abstract
The influence of pulsed substrate bias duty cycle on the growth, microstructure, and defects of Ti1-xAlxN coatings grown by cathodic arc deposition was investigated. Ti1-xAlxN coatings of varying compositions (x = 0.56, 0.38, 0.23) were deposited on cemented carbide substrates with 10, 25, 50, and 95% duty cycles of 50 V pulsed-bias under 10 Pa of pure N-2 gas. Coatings grown at low duty cycles (10 and 25%) showed strongly textured, underdense coatings with facetted columns and low amount of lattice defects. Applying higher duty cycles (50 and 95%) produced coatings that have denser microstructures, less preferred orientation, increasing compressive stresses and increased lattice defect densities. Our study elucidates how duty cycle variation not only changes the overall average energy supplied at the growth front but also kinetically influences the coating growth and thus microstructure and defect structure., Funding Agencies|VINNOVA (FunMat-II)Vinnova [2016-05156]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2017-03813, 2017-06701]; Swedish government strategic research area grant AFM -SFO MatLiU [200900971]; Swedish Research Council VR-RFISwedish Research Council [201700646_9]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [RIF14-0053]
- Published
- 2021
- Full Text
- View/download PDF
7. Low temperature growth of stress-free single phase alpha-W films using HiPIMS with synchronized pulsed substrate bias
- Author
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Shimizu, Tetsuhide, Takahashi, Kazuki, Boyd, Robert, Viloan, Rommel Paulo, Keraudy, Julien, Lundin, Daniel, Yang, Ming, Helmersson, Ulf, Shimizu, Tetsuhide, Takahashi, Kazuki, Boyd, Robert, Viloan, Rommel Paulo, Keraudy, Julien, Lundin, Daniel, Yang, Ming, and Helmersson, Ulf
- Abstract
Efficient metal-ion-irradiation during film growth with the concurrent reduction of gas-ion-irradiation is realized for high power impulse magnetron sputtering by the use of a synchronized, but delayed, pulsed substrate bias. In this way, the growth of stress-free, single phase alpha -W thin films is demonstrated without additional substrate heating or post-annealing. By synchronizing the pulsed substrate bias to the metal-ion rich portion of the discharge, tungsten films with a 110 oriented crystal texture are obtained as compared to the 111 orientation obtained using a continuous substrate bias. At the same time, a reduction of Ar incorporation in the films are observed, resulting in the decrease of compressive film stress from sigma =1.80-1.43GPa when switching from continuous to synchronized bias. This trend is further enhanced by the increase of the synchronized bias voltage, whereby a much lower compressive stress sigma =0.71GPa is obtained at U-s=200V. In addition, switching the inert gas from Ar to Kr has led to fully relaxed, low tensile stress (0.03GPa) tungsten films with no measurable concentration of trapped gas atoms. Room-temperature electrical resistivity is correlated with the microstructural properties, showing lower resistivities for higher U-s and having the lowest resistivity (14.2 mu Omega cm) for the Kr sputtered tungsten films. These results illustrate the clear benefit of utilizing selective metal-ion-irradiation during film growth as an effective pathway to minimize the compressive stress induced by high-energetic gas ions/neutrals during low temperature growth of high melting temperature materials., Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Japan Society for the Promotion of Science (JSPS)Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of Science [17KK0136]
- Published
- 2021
- Full Text
- View/download PDF
8. EFFECT OF PULSED SUBSTRATE BIAS ON THE STRUCTURE AND PROPERTIES OF NITRIDE COATINGS DEPOSITED BY FILTERED CATHODIC ARC PLASMA
- Author
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Reshetnyak, E.N., primary, Strel’nitskij, V.E., additional, Vasyliev, V.V., additional, and Luchaninov, A.A., additional
- Published
- 2024
- Full Text
- View/download PDF
9. Effects of frequency of pulsed substrate bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition
- Author
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Nakazawa, Hideki, Kamata, Ryosuke, Miura, Soushi, and Okuno, Saori
- Published
- 2015
- Full Text
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10. Influence of pulsed substrate bias on the structure and properties of Ti–Al–N films deposited by cathodic vacuum arc
- Author
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Zhang, G.P., Gao, G.J., Wang, X.Q., Lv, G.H., Zhou, L., Chen, H., Pang, H., and Yang, S.Z.
- Published
- 2012
- Full Text
- View/download PDF
11. Influence of pulsed-substrate bias duty cycle on the microstructure and defects of cathodic arc-deposited Ti1-xAlxN coatings
- Author
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K. M. Calamba, Lina Rogström, L. J. S. Johnson, Magnus Odén, J. Salamania, Babak Bakhit, I.C. Schramm, and Robert D. Boyd
- Subjects
Materials science ,02 engineering and technology ,Substrate (electronics) ,engineering.material ,01 natural sciences ,Cathodic protection ,Arc (geometry) ,Coating ,0103 physical sciences ,Cathodic arc deposition ,Materials Chemistry ,Manufacturing, Surface and Joining Technology ,Composite material ,Bearbetnings-, yt- och fogningsteknik ,010302 applied physics ,Coatings ,Ti-Al-N ,Pulsed-substrate bias ,Duty cycle ,Cathodic arc ,Surfaces and Interfaces ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Microstructure ,Surfaces, Coatings and Films ,Cemented carbide ,engineering ,0210 nano-technology - Abstract
The influence of pulsed substrate bias duty cycle on the growth, microstructure, and defects of Ti1-xAlxN coatings grown by cathodic arc deposition was investigated. Ti1-xAlxN coatings of varying compositions (x = 0.56, 0.38, 0.23) were deposited on cemented carbide substrates with 10, 25, 50, and 95% duty cycles of 50 V pulsed-bias under 10 Pa of pure N-2 gas. Coatings grown at low duty cycles (10 and 25%) showed strongly textured, underdense coatings with facetted columns and low amount of lattice defects. Applying higher duty cycles (50 and 95%) produced coatings that have denser microstructures, less preferred orientation, increasing compressive stresses and increased lattice defect densities. Our study elucidates how duty cycle variation not only changes the overall average energy supplied at the growth front but also kinetically influences the coating growth and thus microstructure and defect structure. Funding Agencies|VINNOVA (FunMat-II)Vinnova [2016-05156]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2017-03813, 2017-06701]; Swedish government strategic research area grant AFM -SFO MatLiU [200900971]; Swedish Research Council VR-RFISwedish Research Council [201700646_9]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [RIF14-0053]
- Published
- 2021
12. Corrosion Resistant TiTaN and TiTaAlN Thin Films Grown by Hybrid HiPIMS/DCMS Using Synchronized Pulsed Substrate Bias with No External Substrate Heating
- Author
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Chipatecua Godoy, Yuri, Tengstrand, Olof, Olaya Florez, Jairo, Petrov, Ivan, Bustos, Erika, Hultman, Lars, Herrera-Gomez, Alberto, Greene, Joseph E, Greczynski, Grzegorz, Chipatecua Godoy, Yuri, Tengstrand, Olof, Olaya Florez, Jairo, Petrov, Ivan, Bustos, Erika, Hultman, Lars, Herrera-Gomez, Alberto, Greene, Joseph E, and Greczynski, Grzegorz
- Abstract
Ti0.92Ta0.08N and Ti0.41Al0.51Ta0.08N thin films grown on stainless-steel substrates, with no external heating, by hybrid high-power impulse and dc magnetron sputtering (HiPIMS/DCMS), were investigated for corrosion resistance. The Ta target was operated in HiPIMS mode to supply pulsed Ta-ion fluxes, while two Ti (or Ti and Al) targets were operated in DCSM mode in order to provide a high deposition rate. Corrosion resistance was investigated using potentiodynamic polarization and electrochemical impedance spectroscopy employing a 3.5% NaCl solution at room temperature. The 300-nm-thick transition-metal nitride coatings exhibited good corrosion resistance due to film densification resulting from pulsed heavy Ta-ion irradiation during film growth. Corrosion protective efficiencies were above 99.8% for both Ti0.41Al0.51Ta0.08N and Ti0.92Ta0.08N, and pore resistance was apparently four orders of magnitude higher than for bare 304 stainless-steel substrates., Funding Agencies|CONACyT-MexicoConsejo Nacional de Ciencia y Tecnologia (CONACyT) [CB-2012-01 179304, INFR-2011-01 163219, CB-2007-01 80285]; Fronteras [2015-02-809]; Swedish Research Council VRSwedish Research Council [2014-5790, 2018-03957]; Aforsk foundation [16-359]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO Mat LiU) [2009 00971]; Carl Tryggers Stiftelse [CTS 17:166]
- Published
- 2019
- Full Text
- View/download PDF
13. Low temperature growth of stress-free single phase alpha-W films using HiPIMS with synchronized pulsed substrate bias
- Author
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Ulf Helmersson, Julien Keraudy, Tetsuhide Shimizu, Robert D. Boyd, Ming Yang, Kazuki Takahashi, Rommel Paulo B. Viloan, and Daniel Lundin
- Subjects
010302 applied physics ,Materials science ,General Physics and Astronomy ,chemistry.chemical_element ,Biasing ,02 engineering and technology ,Substrate (electronics) ,Tungsten ,021001 nanoscience & nanotechnology ,01 natural sciences ,Stress (mechanics) ,Annan materialteknik ,chemistry ,Electrical resistivity and conductivity ,0103 physical sciences ,Other Materials Engineering ,Texture (crystalline) ,Thin film ,Composite material ,High-power impulse magnetron sputtering ,0210 nano-technology - Abstract
Efficient metal-ion-irradiation during film growth with the concurrent reduction of gas-ion-irradiation is realized for high power impulse magnetron sputtering by the use of a synchronized, but delayed, pulsed substrate bias. In this way, the growth of stress-free, single phase alpha -W thin films is demonstrated without additional substrate heating or post-annealing. By synchronizing the pulsed substrate bias to the metal-ion rich portion of the discharge, tungsten films with a 110 oriented crystal texture are obtained as compared to the 111 orientation obtained using a continuous substrate bias. At the same time, a reduction of Ar incorporation in the films are observed, resulting in the decrease of compressive film stress from sigma =1.80-1.43GPa when switching from continuous to synchronized bias. This trend is further enhanced by the increase of the synchronized bias voltage, whereby a much lower compressive stress sigma =0.71GPa is obtained at U-s=200V. In addition, switching the inert gas from Ar to Kr has led to fully relaxed, low tensile stress (0.03GPa) tungsten films with no measurable concentration of trapped gas atoms. Room-temperature electrical resistivity is correlated with the microstructural properties, showing lower resistivities for higher U-s and having the lowest resistivity (14.2 mu Omega cm) for the Kr sputtered tungsten films. These results illustrate the clear benefit of utilizing selective metal-ion-irradiation during film growth as an effective pathway to minimize the compressive stress induced by high-energetic gas ions/neutrals during low temperature growth of high melting temperature materials. Funding Agencies|Swedish Research CouncilSwedish Research CouncilEuropean Commission [VR 2018-04139]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Japan Society for the Promotion of Science (JSPS)Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of Science [17KK0136]
- Published
- 2021
14. Metal versus rare-gas ion irradiation during Ti{sub 1-x}Al{sub x}N film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias
- Published
- 2012
- Full Text
- View/download PDF
15. Inductively coupled pulsed plasmas in the presence of synchronous pulsed substrate bias for robust, reliable, and fine conductor etching
- Author
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Banna, Samer, Agarwal, Ankur, Tokashiki, Ken, Cho, Hong, Rauf, Shahid, Todorow, Valentin, Ramaswamy,Kartik, Collins, Ken, Stout, Phillip, Lee, Jeong-Yun, Yoon, Junho, Shin, Kyoungsub, Choi, Sang-Jun, Cho, Han-Soo, Kim, Hyun-Joong, Lee, Changhun, and Lymberopoulos, Dimitris
- Subjects
Business ,Chemistry ,Electronics ,Electronics and electrical industries - Published
- 2009
16. Metal versus rare-gas ion irradiation during Ti1-xAlxN film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias
- Author
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Greczynski, Grzegorz, Lu, Jun, Jensen, Jens, Petrov, Ivan, Greene, Joseph E., Bolz, Stephan, Koelker, Werner, Schiffers, Christoph, Lemmer, Oliver, Hultman, Lars, Greczynski, Grzegorz, Lu, Jun, Jensen, Jens, Petrov, Ivan, Greene, Joseph E., Bolz, Stephan, Koelker, Werner, Schiffers, Christoph, Lemmer, Oliver, and Hultman, Lars
- Abstract
Metastable NaCl-structure Ti1-xAlxN is employed as a model system to probe the effects of metal versus rare-gas ion irradiation during film growth using reactive high-power pulsed magnetron sputtering (HIPIMS) of Al and dc magnetron sputtering of Ti. The alloy film composition is chosen to be x = 0.61, near the kinetic solubility limit at the growth temperature of 500 degrees C. Three sets of experiments are carried out: a -60V substrate bias is applied either continuously, in synchronous with the full HIPIMS pulse, or in synchronous only with the metal-rich-plasma portion of the HIPIMS pulse. Alloy films grown under continuous dc bias exhibit a thickness-invariant small-grain, two-phase nanostructure (wurtzite AlN and cubic Ti1-xAlxN) with random orientation, due primarily to intense Ar+ irradiation leading to Ar incorporation (0.2 at. %), high compressive stress (-4.6 GPa), and material loss by resputtering. Synchronizing the bias with the full HIPIMS pulse results in films that exhibit much lower stress levels (-1.8GPa) with no measureable Ar incorporation, larger grains elongated in the growth direction, a very small volume fraction of wurtzite AlN, and random orientation. By synchronizing the bias with the metal-plasma phase of the HIPIMS pulses, energetic Ar+ ion bombardment is greatly reduced in favor of irradiation predominantly by Al+ ions. The resulting films are single phase with a dense competitive columnar structure, strong 111 orientation, no measureable trapped Ar concentration, and even lower stress (-0.9 GPa). Thus, switching from Ar+ to Al+ bombardment, while maintaining the same integrated incident ion/metal ratio, eliminates phase separation, minimizes renucleation during growth, and reduces the high concentration of residual point defects, which give rise to compressive stress., Funding Agencies|Swedish VINN Excellence Center on Functional Nanoscale Materials (FunMat)
- Published
- 2012
- Full Text
- View/download PDF
17. Corrosion Resistant TiTaN and TiTaAlN Thin Films Grown by Hybrid HiPIMS/DCMS Using Synchronized Pulsed Substrate Bias with No External Substrate Heating
- Author
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Chipatecua Godoy, Yuri, primary, Tengstrand, Olof, additional, Olaya Florez, Jairo, additional, Petrov, Ivan, additional, Bustos, Erika, additional, Hultman, Lars, additional, Herrera-Gomez, Alberto, additional, Greene, J.E., additional, and Greczynski, Grzegorz, additional
- Published
- 2019
- Full Text
- View/download PDF
18. Corrosion Resistant TiTaN and TiTaAlN Thin Films Grown by Hybrid HiPIMS/DCMS Using Synchronized Pulsed Substrate Bias with No External Substrate Heating
- Author
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Godoy, Chipatecua, Tengstrand, Florez, Petrov, Bustos, Hultman, Herrera-Gomez, Greene, and Greczynski
- Subjects
corrosion ,TiTaN coatings ,HiPIMS ,hard coatings ,TiTaAlN coatings - Abstract
Ti0.92Ta0.08N and Ti0.41Al0.51Ta0.08N thin films grown on stainless-steel substrates, with no external heating, by hybrid high-power impulse and dc magnetron sputtering (HiPIMS/DCMS), were investigated for corrosion resistance. The Ta target was operated in HiPIMS mode to supply pulsed Ta-ion fluxes, while two Ti (or Ti and Al) targets were operated in DCSM mode in order to provide a high deposition rate. Corrosion resistance was investigated using potentiodynamic polarization and electrochemical impedance spectroscopy employing a 3.5% NaCl solution at room temperature. The 300-nm-thick transition-metal nitride coatings exhibited good corrosion resistance due to film densification resulting from pulsed heavy Ta-ion irradiation during film growth. Corrosion protective efficiencies were above 99.8% for both Ti0.41Al0.51Ta0.08N and Ti0.92Ta0.08N, and pore resistance was apparently four orders of magnitude higher than for bare 304 stainless-steel substrates.
- Published
- 2019
- Full Text
- View/download PDF
19. Effect of Pulsed Substrate Bias on Evolution of Surface Morphology and sp3 Hybridization Degree of Ag-DLC Films in a Mid-Frequency Dual-Magnetron Sputtering
- Author
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Xiang Yu, Yi Yong Yang, and Cheng Biao Wang
- Subjects
Materials science ,Morphology (linguistics) ,General Engineering ,Analytical chemistry ,chemistry.chemical_element ,Nanotechnology ,Substrate (electronics) ,Sputter deposition ,Degree (temperature) ,symbols.namesake ,Carbon film ,chemistry ,Sputtering ,symbols ,Raman spectroscopy ,Carbon - Abstract
In this work, we have investigated the influence of the pulsed substrate bias voltage on the evolution of the surface morphology and sp3 hybridization degree of Ag containing diamond-like carbon (Ag-DLC) films deposited by using a mid-frequency dual-magnetron sputtering system. The unipole substrate bias voltage at 0 V, -60 V, -100 V and -150 V, respectively, was employed on AISI 440 substrate with the duty ratio uniformly set at 70%. The surface morphology was observed by AFM and the hybridization degree of the DLC films was performed respectively using Raman Spectroscopy and Rockwell C indenter. In these samples, the surface morphology and sp3 hybridization degree of Ag-DLC films show a certain dependence on the pulsed substrate bias applied. The evolution tendency of the surface morphology is found different with that of the sp3 hybridization degree of the DLC films under action of the pulsed substrate bias. These phenomena imply that the energetic particles may induce a balance between recombination of the particles and change of the internal stress in the DLC films.
- Published
- 2010
- Full Text
- View/download PDF
20. Properties of diamond-like carbon films deposited by ion plating with a pulsed substrate bias
- Author
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Liang-Yih Chen, Franklin Chau-Nan Hong, and Chia-Yuan Hsu
- Subjects
Materials science ,Mechanical Engineering ,Material properties of diamond ,Ion plating ,Analytical chemistry ,chemistry.chemical_element ,Biasing ,General Chemistry ,Substrate (electronics) ,Electronic, Optical and Magnetic Materials ,Ion ,Carbon film ,chemistry ,Duty cycle ,Materials Chemistry ,Electrical and Electronic Engineering ,Carbon - Abstract
Diamond-like carbon films of high quality were deposited using CH 4 by a magnetically enhanced ion plating system with a bipolar pulsed substrate bias (0–1000 V, 0–33 kHz). The flux and energy distribution of impinging ions could be individually controlled by the bias voltage and the duty cycle, defined as the percentage of ion acceleration time in the total pulse period. The effects of bias voltage and duty cycle on the structure and properties of film were studied. Owing to charge accumulation on the surface, ion bombardment energy increases with decreasing the duty cycle. The film's hydrogen content decreases with decreasing the duty cycle. The film having the highest growth rate and the lowest internal stress can be obtained at a duty cycle of 88%, suggesting possible charge neutralization on the surface. In addition, the hydrogen content decreases with increasing the substrate bias and the film having the highest growth rate and high hardness can be deposited at a substrate bias of 600 V. A lower bias reduces the ion flux and ion energy forming a softer hydrogen-containing film, and a higher bias induces the re-sputtering effect and the formation of sp 2 carbon bonding in the film. Hardness and adhesion increase with increasing the substrate bias, except that hardness slightly decreases at the highest bias of 800 V, owing to the extremely high ion energy bombardment enhancing the formation of sp 2 bonding. Ion energy is concluded to be crucial in determining the structure and properties of diamond-like carbon films.
- Published
- 1998
- Full Text
- View/download PDF
21. Inductively-Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Advanced Gate Etching
- Author
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Banna, S., Agarwal, A., Todorow, V., Rauf, S., Ramaswamy, K., Stout, P., Lymberopoulos, D., Collins, K., Tokashiki, K., Y Lee, J., Yoon, J., Shin, K., Joubert, O., Cunge, G., Pargon, E., Vallier, L., Maxime Darnon, Camille Petit-Etienne, Clot, Marielle, Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2009
22. Metal versus rare-gas ion irradiation during Ti1−xAlxN film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias
- Author
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Greczynski, Grzegorz, primary, Lu, Jun, additional, Jensen, Jens, additional, Petrov, Ivan, additional, Greene, Joseph E., additional, Bolz, Stephan, additional, Kölker, Werner, additional, Schiffers, Christoph, additional, Lemmer, Oliver, additional, and Hultman, Lars, additional
- Published
- 2012
- Full Text
- View/download PDF
23. Effect of Pulsed Substrate Bias on Evolution of Surface Morphology and sp3 Hybridization Degree of Ag-DLC Films in a Mid-Frequency Dual-Magnetron Sputtering
- Author
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Yu, Xiang, primary, Yang, Yi Yong, additional, and Wang, Cheng Biao, additional
- Published
- 2010
- Full Text
- View/download PDF
24. Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Chemical Vapor Deposition
- Author
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Hiramatsu, Takahiro, primary, Matsuda, Tokiyoshi, additional, Furuta, Hiroshi, additional, Nitta, Hiroshi, additional, Kawaharamura, Toshiyuki, additional, Li, Chaoyang, additional, Furuta, Mamoru, additional, and Hirao, Takashi, additional
- Published
- 2010
- Full Text
- View/download PDF
25. Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Chemical Vapor Deposition
- Author
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Takahiro Hiramatsu, Hiroshi Furuta, Hiroshi Nitta, Takashi Hirao, Toshiyuki Kawaharamura, Mamoru Furuta, Chaoyang Li, and Tokiyoshi Matsuda
- Subjects
Materials science ,Hybrid physical-chemical vapor deposition ,General Engineering ,Analytical chemistry ,General Physics and Astronomy ,Substrate (chemistry) ,Breakdown voltage ,Chemical vapor deposition ,Combustion chemical vapor deposition ,Inductively coupled plasma ,Plasma processing ,Pulsed laser deposition - Abstract
A high-quality SiO2 film was successfully achieved at a temperature of 150 °C by inductively coupled plasma chemical vapor deposition (ICP-CVD) with a bipolar pulsed bias applied to a substrate. When the SiO2 film was deposited without the pulsed substrate bias, its density rapidly decreased and its insulating property deteriorated. However, its densification was enhanced and its insulating property was improved by the pulsed substrate bias even though the deposition rate increased. A leakage current of less than 10.0 nA/cm2 and a breakdown voltage of 5.2 MV/cm at 1.0 µA/cm2 were obtained at a temperature of 150 °C with a deposition rate of 18.0 nm/min.
- Published
- 2010
- Full Text
- View/download PDF
26. Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias
- Author
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Przybyszewski, J. S and Shaltens, R. K
- Subjects
Materials, Metallic - Abstract
The method and equipment used for sputtering by use of an apertured electrode and a pulsed substrate bias are discussed. The technique combines the advantages of ion plating with the versatility of a radio frequency sputtered source. Electroplating is accomplished by passing a pulsed high voltage direct current to the article being plated during radio frequency sputtering.
- Published
- 1973
27. Properties of diamond-like carbon films deposited by ion plating with a pulsed substrate bias
- Author
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Hsu, Chia-Yuan, primary, Chen, Liang-Yih, additional, and Chau-Nan Hong, Franklin, additional
- Published
- 1998
- Full Text
- View/download PDF
28. Control of Structure and Properties of Coatings Deposited by Pulsed Magnetron Sputtering
- Author
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Arnell, R.D., Kelly, P.J., Bradley, J.W., Voevodin, Andrey A., editor, Shtansky, Dmitry V., editor, Levashov, Evgeny A., editor, and Moore, John J., editor
- Published
- 2004
- Full Text
- View/download PDF
29. Effect of Pulsed Substrate Bias on Film Properties of SiO2Deposited by Inductively Coupled Plasma Chemical Vapor Deposition
- Author
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Hiramatsu, Takahiro, Matsuda, Tokiyoshi, Furuta, Hiroshi, Nitta, Hiroshi, Kawaharamura, Toshiyuki, Li, Chaoyang, Furuta, Mamoru, and Hirao, Takashi
- Abstract
A high-quality SiO2film was successfully achieved at a temperature of 150 \mbox{\circC} by inductively coupled plasma chemical vapor deposition (ICP-CVD) with a bipolar pulsed bias applied to a substrate. When the SiO2film was deposited without the pulsed substrate bias, its density rapidly decreased and its insulating property deteriorated. However, its densification was enhanced and its insulating property was improved by the pulsed substrate bias even though the deposition rate increased. A leakage current of less than 10.0 nA/cm2and a breakdown voltage of 5.2 MV/cm at 1.0 \mbox{$\mu$}A/cm2were obtained at a temperature of 150 \mbox{\circC} with a deposition rate of 18.0 nm/min.
- Published
- 2010
- Full Text
- View/download PDF
30. Metal-ion subplantation: A game changer for controlling nanostructure and phase formation during film growth by physical vapor deposition.
- Author
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Greczynski, G., Mráz, S., Schneider, J. M., and Hultman, L.
- Subjects
PHYSICAL vapor deposition ,MAGNETRON sputtering ,MASS analysis (Spectrometry) ,MOMENTUM transfer ,THIN films - Abstract
Up until recently, thin film growth by magnetron sputtering relied on enhancing adatom mobility in the surface region by gas-ion irradiation to obtain dense layers at low deposition temperatures. However, an inherently low degree of ionization in the sputtered material flux during direct-current magnetron sputtering (DCMS), owing to relatively low plasma densities involved, prevented systematic exploration of the effects of metal-ion irradiation on the film nanostructure, phase content, and physical properties. Employing only gas-ion bombardment results in an inefficient energy and momentum transfer to the growing film surface. Also, for enhanced substrate biasing, the higher concentration of implanted noble gas atoms at interstitial lattice positions causes elevated compressive stress levels. High-power impulse magnetron sputtering (HiPIMS), however, provides controllable metal-ion ionization and, more importantly, enables the minimization of adverse gas-ion irradiation effects. The latter can be realized by the use of pulsed substrate bias applied synchronously with the metal-ion-rich portion of each HiPIMS pulse (metal-ion-synchronized HiPIMS), based on the results of time-resolved ion mass spectrometry analyses performed at the substrate position. In this way, both the metal-ion energy and the momentum can be precisely controlled for one to exploit the benefits of irradiation by metal-ions, which are also the film-forming species. Systematic studies performed in recent years using binary and ternary transition metal-based nitrides as model systems revealed new phenomena with accompanying unique and attractive film growth pathways. This Perspective paper focuses on the effects of low-mass metal-ion irradiation and their role for the nanostructure and phase control. We review basic findings and present original results from ion mass spectrometry studies and materials characterization for the effect of metal-ion subplantation. Key correlations are highlighted, which, if properly engaged, enable unprecedented control over film nanostructure and phase formation and, hence, the resulting properties. We show generalization from the findings to present a new concept for thin film growth in a hybrid HiPIMS/DCMS configuration with metal-ion-synchronized bias. Based on the results obtained for TM-based nitrides, there are no evident physical limitations preventing the extension of this deposition process concept for other materials systems or other metal–ion-based thin film growth techniques. Further exciting findings could, thus, be anticipated for the future. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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31. Mechanical and Tribological Properties of TiN Coatings Produced by PIII&D Technique
- Author
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Akkaya, S.S., Vasyliev, V.V., Kazmanl, K., Luchaninov, A.A., Reshetnyak, E.N., Solak, N., Strel’nitskij, V.E., and Ürgen, M.
- Subjects
Nitride coatings ,Pulsed substrate bias ,Residual stress ,Mechanical and tribological properties ,Filtered vacuum arc deposition - Abstract
The structure, mechanical and tribological properties TiN coatings рroduced with PIII&D by using rectilinear filtered vacuum arc plasma system are present. The results of scratch testing and wear reciprocating testing clearly revealed the positive effect of pulse bias (0.5÷2.5 kV) application on tribological behavior of the TiN coatings in comparison the coatings deposited with DC bias (150 V). Application of pulsed bias potential leads to a significant reduction in the friction coefficient and increasing of coatings wear resistance due to a change in their structure. The orientation of crystal planes parallel to the surface changes from (111) to (220) with the application of pulse bias, which is accompanied by a transition from fibrous grains structure to denser columnar grains. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35187
- Published
- 2013
32. Comparative Characteristics of Stress and Structure of TiN and Ti0.5-xAl0.5YxN Coatings Prepared by Filtered Vacuum-Arc PIIID Method
- Author
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Vasyliev, V.V., Luchaninov, A.A., Reshetnyak, E.N., and Strelnitskij, V.E.
- Subjects
Nitride coatings ,Solid solution ,Pulsed substrate bias ,Residual stress ,Filtered vacuum arc deposition - Abstract
A comparative study of the structure and stress state of Ti0.5-xAl0.5YxN and TiN coatings deposited under identical conditions from the filtered vacuum-arc plasma under high voltage pulsed bias potential on the substrate was carried out. It was found that for Ti0.5Al0.5N coatings the dependence of the residual stress on the amplitude of the pulsed voltage potential is non-monotonic with a minimum when the amplitude is of 1 kV. As for TiN films, a monotonic decrease in the level of residual stresses takes place when the amplitude of the potential is increased in the range 0-2.5 kV. Non-monotonic dependence for multicomponent coatings Ti-Al-Y-N may occur due to the possibility of phase transition associated with the decay of the supersaturated solid solution (Ti,Al)N stimulated by high energy ion bombardment. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34913
- Published
- 2012
33. Energy-efficient physical vapor deposition of transition metal nitride thin films
- Author
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Honnali, Sanath Kumar and Honnali, Sanath Kumar
- Abstract
This thesis focuses on providing insights into energy-efficient ways of growing protective thin films using physical vapor deposition (PVD) by magnetron sputtering, specifically high-power impulse magnetron sputtering (HiPIMS). This technique involves ionizing the material to be deposited to a high degree. The properties of the film for applications such as protective coatings could thus be controlled by modulating the energy and guiding the ions using electric and magnetic fields, respectively. The multiprincipal element TiZrNbTa nitride system is of interest for its corrosion-resistant coating applications. This material system consists of refractory metals that exhibit different ionic charge states with significant mass contrast. Thus, when sputtered with HiPIMS, the properties of the films strongly depend on the mass and energy of the bombarding metal ions. The transport of these ions to the substrate is influenced by the magnetic field distribution in the chamber. To demonstrate the influence of the magnetron arrangement, the deposition is performed without external heating. Two magnetron arrangements were chosen: a tilted closed-field design with four magnetrons and a single magnetron. The films exhibited different properties depending on the magnetron design used. The single magnetron design induces changes in the preferred orientation of the films from 111 to 200 along with film composition and density. A reduction in residual stress was observed with only a ~6 % degradation in the hardness compared to the closed-field design. I also demonstrate epitaxial growth of TiZrNbTaNx films without external heating. The films were grown with a single magnetron design on single crystal sapphire substrate. Applying a pulsed substrate bias with a long pulse width instead of a constant bias, resulted in low argon (~1 at. %) and oxygen (0.5 at. %) content in the films. In addition, the films exhibited a higher optical absorbance in the near-infrared region than th, Funding: The work is supported financially by the VINNOVA Competence Centre FunMat-II (Grant No. 2022-03071), the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU No. 2009 00971), the Knut and Alice Wallenberg foundation through the Wallenberg Academy Fellows program (KAW-2020.0196), the Swedish Research Council (VR) under Project No. 2021-03826, and the Swedish Energy Agency under Project No. 52740-1.
- Published
- 2024
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34. INFLUENCE OF DEPOSITION CONDITIONS ON MICROSTRUCTURE AND TEXTURE OF Ti1-XAlXN PVD COATINGS
- Author
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Pinchuk, Nataliia, Fallqvist, Mikael, Andersson, Jon M., Johansson-Jöesaar, Mats, M’Saoubi, Rachid, Krakhmalev, Pavel, Pinchuk, Nataliia, Fallqvist, Mikael, Andersson, Jon M., Johansson-Jöesaar, Mats, M’Saoubi, Rachid, and Krakhmalev, Pavel
- Abstract
This study is focused on how the application of pulsed substrate bias during cathodic arc deposition affects the microstructure, texture, grain size and phase composition of (Ti,Al)N coatings. A series of Tix-1AlxN, 0.25≤x≤0.55 coatings were deposited on WC-Co cemented carbide substrates with -30 V, -60 V and -300 V pulsing bias (duty cycle 10 % and a frequence of 1 kHz) under controlled chamber conditions at 4.5 Pa N2-gas and a substrate temperature about 400 °C. The pulsing parameters for the bias (voltage, duty cycle and frequency) were deliberately selected to influence structure, microstructure and composition of the deposited coatings. All Tix-1AlxN coatings had a consistent columnar cubic B1 structure regardless of their chemical composition. Coatings grown at -30 V and -60 V pulsed bias exhibited a pronounced <111> texture attributed to a kinetically driven mechanism influenced by the relative flux of ion species, affecting the surface migration of adatoms during growth. In contrast, the coatings grown with a pulsed bias of -300 V exhibited a reduced <111> texture and the onset of grains with <100> preferred orientation. The transition to the <100> orientation with increased ion energy agrees with the fact that the <111> directions expose the densest array of atoms to the ion beam during growth while the <100> are the most open channeling directions in a B1 structure. The correlation to the preferred with respect to pulsing conditions during growth, correlated to microstructure, grain size and phase composition be further discussed. Surface roughness was highest (Sa≈0.17-0.22 µm) for coating deposited at pulsed bias -30 V.
- Published
- 2024
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35. High temperature decomposition and age hardening of single-phase wurtzite Ti1−xAlxN thin films grown by cathodic arc deposition
- Author
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Salamania, Janella, Bock, Florian, Johnson, L. J. S., Tasnadi, Ferenc, Kwick, K. M. Calamba, Farhadizadeh, Alireza, Abrikosov, Igor, Rogström, Lina, Odén, Magnus, Salamania, Janella, Bock, Florian, Johnson, L. J. S., Tasnadi, Ferenc, Kwick, K. M. Calamba, Farhadizadeh, Alireza, Abrikosov, Igor, Rogström, Lina, and Odén, Magnus
- Abstract
Wurtzite TmAlN (T-m = transition metal) themselves are of interest as semiconductors with tunable band gap, insulating motifs to superconductors, and piezoelectric crystals. Characterization of wurtzite TmAlN is challenging because of the difficulty to synthesize them as single-phase solid solution and such thermodynamic, elastic properties, and high temperature behavior of wurtzite Ti1-xAlxN is unknown. Here, we investigated the high temperature decomposition behavior of wurtzite Ti1-xAlxN films using experimental methods combined with first-principles calculations. We have developed a method to grow single-phase metastable wurtzite Ti1-xAlxN (x = 0.65, 0.75, 085, and 0.95) solid-solution films by cathodic arc deposition using low duty-cycle pulsed substrate-bias voltage. We report the full elasticity tensor for wurtzite Ti1-xAlxN as a function of Al content and predict a phase diagram including a miscibility gap and spinodals for both cubic and wurtzite Ti1-xAlxN. Complementary high-resolution scanning transmission electron microscopy and chemical mapping demonstrate decomposition of the films after high temperature annealing (950 degrees C), which resulted in nanoscale chemical compositional modulations containing Ti-rich and Al-rich regions with coherent or semicoherent interfaces. This spinodal decomposition of the wurtzite film causes age hardening of 1-2 GPa., Funding Agencies|Swedish National Infras-tructure for Computing (SNIC) - Swedish Research Council [VR-2015-04630]; Swedish National Infrastructure for Computing (SNIC); National Academic Infrastructure for Supercomputing in Sweden (NAISS); Swedish Research Council [VR-2015-04630]; VINNOVA (FunMat-II project) [2022-03071]; Swedish Research Council (VR) [2017-03813, 2017-06701, 2021-04426, 2021-00357, 2019-00191]; Swedish government strategic research area [AFM-SFO MatLiU (2009-00971)]; Knut and Alice Wallenberg Foundation [KAW-2018.0194]
- Published
- 2024
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36. Unprecedented Al supersaturation in single-phase rock salt structure VAlN films by Al+ subplantation.
- Author
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Greczynski, G., Mráz, S., Hans, M., Primetzhofer, D., Lu, J., Hultman, L., and Schneider, J. M.
- Subjects
THIN films ,CERAMICS ,CERAMIC materials ,WEAR resistance ,PROTECTIVE coatings ,ALUMINUM alloys - Abstract
Modern applications of refractory ceramic thin films, predominantly as wear-protective coatings on cutting tools and on components utilized in automotive engines, require a combination of excellent mechanical properties, thermal stability, and oxidation resistance. Conventional design approaches for transition metal nitride coatings with improved thermal and chemical stability are based on alloying with Al. It is well known that the solubility of Al in NaCl-structure transition metal nitrides is limited. Hence, the great challenge is to increase the Al concentration substantially while avoiding precipitation of the thermodynamically favored wurtzite-AlN phase, which is detrimental to mechanical properties. Here, we use VAlN as a model system to illustrate a new concept for the synthesis of metastable single-phase NaCl-structure thin films with the Al content far beyond solubility limits obtained with conventional plasma processes. This supersaturation is achieved by separating the film-forming species in time and energy domains through synchronization of the 70-µs-long pulsed substrate bias with intense periodic fluxes of energetic Al
+ metal ions during reactive hybrid high power impulse magnetron sputtering of the Al target and direct current magnetron sputtering of the V target in the Ar/N2 gas mixture. Hereby, Al is subplanted into the cubic VN grains formed by the continuous flux of low-energy V neutrals. We show that Al subplantation enables an unprecedented 42% increase in metastable Al solubility limit in V1-x Alx N, from x±0.52 obtained with the conventional method to 0.75. The elastic modulus is 32565GPa, in excellent agreement with density functional theory calculations, and approximately 50% higher than for corresponding films grown by dc magnetron sputtering. The extension of the presented strategy to other A1-ion-assisted vapor deposition methods or materials systems is straightforward, which opens up the way for producing supersaturated single-phase functional ceramic alloy thin films combining excellent mechanical properties with high oxidation resistance. [ABSTRACT FROM AUTHOR]- Published
- 2017
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37. Defects in Titanium Aluminum Nitride-Based Thin Films
- Author
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Salamania, Janella and Salamania, Janella
- Abstract
Coatings and thin films inherently contain several types of defects. This thesis aims to enhance the understanding of the relationship of defects on the growth, structure, stability, and properties of titanium aluminum nitride films synthesized by physical vapor deposition techniques. Heteroepitaxial cubic and wurtzite films in the Ti-Al-N system grown by reactive magnetron sputtering were studied in relation to their defect structures. The dislocation structures of heteroepitaxial TiN and Ti1-xAlxNy films were analyzed by high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Together with atomistic simulations, it was revealed that the presence of different dislocation types in TiN enhances the metal-metal bonds which locally weakens the directionally covalent metal-N bonds. In epitaxial cubic Ti1-xAlxN films, microstrain analysis shows that increasing N-vacancies influences the strain and compositional fluctuations in as-deposited states. During spinodal decomposition induced by annealing to high temperatures, the delay in coarsening and strain correlates with the amount of N vacancies. Detailed characterization of the decomposing domains exposed the formation of stacking faults and partial dislocations as a strain-relieving mechanism which also facilitates the known cubic-to-wurtzite transformation in Ti-Al-N. Cathodic arc deposited Ti1-xAlxN films were grown by applying a low duty cycle pulsed-substrate bias and high nitrogen pressures. This resulted into films with coarse grains and low lattice defects within them, indicating a kinetically controlled route to modify the defect structures in arc-deposited films. Applying the same technique on single crystalline TiN seed layer films kinetically stabilizes a pseudomorphic growth, allowing to form a highly textured, pseudo epitaxial wurtzite Ti1-xAlxN films by arc deposition. In combination with theoretical calculations, it was revealed that w-Ti1-xAlxN films also exhibit a miscibili
- Published
- 2023
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38. Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities.
- Author
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Peter, S., Günther, M., Hauschild, D., and Richter, F.
- Subjects
AMORPHOUS substances ,CARBON ,THICK films ,TEMPERATURE ,PHYSICS research - Abstract
The deposition of hydrogenated amorphous carbon (a-C:H) as well as hydrogenated amorphous silicon carbonitride (SiCN:H) films was investigated in view of a simultaneous realization of a minimum Young’s modulus (>70 GPa), a high electrical insulation (≥1 MV/cm), a low permittivity and the uniform coverage of microcavities with submillimeter dimensions. For the a-C:H deposition the precursors methane (CH
4 ) and acetylene (C2 H2 ) were used, while SiCN:H films were deposited from mixtures of trimethylsilane [SiH(CH3 )3 ] with nitrogen and argon. To realize the deposition of micrometer thick films with the aforementioned complex requirements at substrate temperatures ≤200 °C, several plasma enhanced chemical vapor deposition methods were investigated: the capacitively coupled rf discharge and the microwave electron cyclotron resonance (ECR) plasma, combined with two types of pulsed substrate bias. SiCN:H films deposited at about 1 Pa from ECR plasmas with pulsed high-voltage bias best met the requirements. Pulsed biasing with pulse periods of about 1 μs and amplitudes of about -2 kV was found to be most advantageous for the conformal low temperature coating of the microtrenches, thereby ensuring the required mechanical and insulating film properties. [ABSTRACT FROM AUTHOR]- Published
- 2010
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39. Surface modification of magnetic recording media by filtered cathodic vacuum arc.
- Author
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Zhang, H.-S. and Komvopoulos, K.
- Subjects
VACUUM arcs ,MAGNETIC recording media ,ION implantation ,NANOELECTROMECHANICAL systems ,CORROSION resistant materials - Abstract
Surface modification of a magnetic recording medium was accomplished by filtered cathodic vacuum arc (FCVA). The carbon overcoat of thin-film disks was removed by Ar
+ ion sputter etching in vacuum to prevent oxidation of the exposed magnetic medium, which was then modified by FCVA carbon plasma under conditions of zero and -100 V pulsed substrate bias. Monte Carlo simulations performed with the T-DYN code, x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and surface force microscopy (SFM) provided insight into carbon implantation profiles, surface chemical composition, roughness, and nanomechanical properties of the surface-treated magnetic medium. The dependence of surface modification on the FCVA treatment conditions is discussed in the context of T-DYN, XPS, AFM, and SFM results. The findings of this study demonstrate the potential of FCVA to provide overcoat-free magnetic recording media exhibiting oxidation resistance and enhanced nanomechanical properties. [ABSTRACT FROM AUTHOR]- Published
- 2009
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40. Digital Timing Generator for Control of Plasma Discharges
- Author
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Liao, Hao Hsiang and Liao, Hao Hsiang
- Abstract
This thesis report presents a new design of a synchronization unit for high power impulse magnetron sputtering (HiPIMS) applications used for depositing thin films. The proposed system is composed of two major hardware parts: a microcontroller unit (MCU) and a field-programmable gate array (FPGA). The control range of the new system is increased by at least ten times compared to existing synchronization unit designed by Ionautics AB.In order to verify the system and benchmark its innovations, several batches of the thin film have been deposited using the new technology. It is shown that HiPIMS with synchronized pulsed substrate bias can effectively improve coating performance. Pulsed substrate bias with user-defined pulse width and delay time is possible to use in the new control mode proposed by this master thesis work; Bias mode. As a result, this master thesis work enables users to flexibly control the HiPIMS processes.
- Published
- 2019
41. Microstructural and properties investigations of tantalum-doped tungsten diboride ceramic coatings via HiPIMS and RF magnetron sputtering.
- Author
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Psiuk, Rafał, Chrzanowska-Giżyńska, Justyna, Denis, Piotr, Wyszkowska, Edyta, Wiśniewska, Maria, Lipińska, Marta, Wojtiuk, Ewa, Kurpaska, Łukasz, Smolik, Jerzy, and Mościcki, Tomasz
- Abstract
In this work, tantalum-doped tungsten boride ceramic coatings were deposited from a single sputtering target with the radio frequency (RF) and high-power impulse magnetron sputtering (HiPIMS) methods. Two-inch torus targets were synthesised from pure elements with the spark plasma sintering (SPS) method with a stoichiometric composition of W
1-x Tax B2.5 (x = 0, 0.08, 0.16, 0.24). Films were deposited with RF and HiPIMS power suppliers at process temperatures from RT to 600 °C. The substrate heating and the energy of the ionised material impacting the substrate increase the surface diffusivity of adatoms and are crucial in the deposition process. The results of SEM and XRD investigations clearly show that the addition of tantalum also changes the microstructure of the deposited films. The coatings without tantalum possess a finer microstructure than those with 24% of tantalum. The structure of films is homogeneous along the film thickness and composed mainly of columns with a (0001) preferred orientation. Deposited coatings are composed mainly of P6 /mmm α-WB2 structures. The analysis of nanoindentation results allowed us to determine that ceramic coatings obtained with the HiPIMS method possess hardness above 41 GPa and a ratio of hardness to reduced Young modulus above 0.1. The thickness of HiPIMS-deposited films is relatively small: only around 60% of the RF magnetron sputtered coatings even when the average power input was two times higher. However, it has been shown that the RF coatings require heating the substrate above 400 °C to obtain a crystalline structure, while the HiPIMS method allows for a reduction of the substrate temperature to 300 °C. [ABSTRACT FROM AUTHOR]- Published
- 2024
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- View/download PDF
42. Paradigm shift in thin-film growth by magnetron sputtering: From gas-ion to metal-ion irradiation of the growing film.
- Author
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Greczynski, Grzegorz, Petrov, Ivan, Greene, J. E., and Hultman, Lars
- Subjects
MAGNETRON sputtering ,SILICON nitride ,ION bombardment ,CERAMIC metals ,MASS analysis (Spectrometry) ,THIN films ,MOMENTUM transfer - Abstract
Ion irradiation is a key tool for controlling the nanostructure, phase content, and physical properties of refractory ceramic thin films grown at low temperatures by magnetron sputtering. However, in contrast to gas-ion bombardment, the effects of metal-ion irradiation on properties of refractory ceramic thin films have not been extensively studied due to (i) low metal-ion concentrations (a few percents) during standard direct-current magnetron sputtering (DCMS) and (ii) difficulties in separating metal-ion from gas-ion fluxes. Recently, the situation has changed dramatically, thanks to the development of high-power impulse magnetron sputtering (HiPIMS), which provides highly-ionized metal-ion plasmas. In addition, careful choice of sputtering conditions allows exploitation of gas-rarefaction effects such that the charge state, energy, and momentum of metal ions incident at the growing film surface can be tuned. This is possible via the use of pulsed substrate bias, synchronized to the metal-ion-rich portion of each HiPIMS pulse. In this review, the authors begin by summarizing the results of time-resolved mass spectrometry analyses performed at the substrate position during HiPIMS and HiPIMS/DCMS cosputtering of transition-metal (TM) targets in Ar and Ar/N
2 atmospheres. Knowledge of the temporal evolution of metal- and gas-ion fluxes is essential for precise control of the incident metal-ion energy and for minimizing the role of gas-ion irradiation. Next, the authors review results on the growth of binary, pseudobinary, and pseudoternary TM nitride alloys by metal-ion-synchronized HiPIMS. In contrast to gas ions, a fraction of which are trapped at interstitial sites, metal ions are primarily incorporated at lattice sites resulting in much lower compressive stresses. In addition, the closer mass match with the film-forming species results in more efficient momentum transfer and provides the recoil density and energy necessary to eliminate film porosity at low deposition temperatures. Several novel film-growth pathways have been demonstrated: (i) nanostructured N-doped bcc-CrN0.05 films combining properties typically associated with both metals and ceramics, (ii) fully-dense, hard, and stress-free Ti0.39 Al0.61 N, (iii) single-phase cubic Ti1−x Six N with the highest reported SiN concentrations, (iv) unprecedented AlN supersaturation in single-phase NaCl-structure V1−x Alx N, and (v) a dramatic increase in the hardness, due to selective heavy-metal ion bombardment during growth, of dense Ti0.92 Ta0.08 N films deposited with no external heating. [ABSTRACT FROM AUTHOR]- Published
- 2019
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43. Industrial application potential of high power impulse magnetron sputtering for wear and corrosion protection coatings.
- Author
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Vetter, Joerg, Shimizu, Tetsuhide, Kurapov, Denis, Sasaki, Tomoya, Mueller, Juergen, Stangier, Dominic, and Esselbach, Markus
- Subjects
DC sputtering ,INDUSTRIAL capacity ,MAGNETRON sputtering ,VACUUM arcs ,PROTECTIVE coatings ,VACUUM technology ,SURFACE coatings ,MAGNETRONS - Abstract
PVD technologies, including vacuum arc evaporation and DC-magnetron sputtering, have been utilized in industrial settings since the early 1980s for depositing protective coatings. These coatings encompass a range of materials such as metal nitrides, carbonitrides, oxides, oxynitrides, and DLC, serving diverse applications such as cutting and forming tools, automotive components, and decoration. Vacuum arc evaporation generates a highly energized and ionized particle flux toward the substrate, while "classical" gas-ion-dominated direct current magnetron sputtering (DCMS) has limitations in generating ionized and energetic species of the sputtered target material. The development of High-Power Impulse Magnetron Sputtering (HiPIMS) has exhibited significant potential in addressing DCMS's limitations by enabling the production of highly energetic particles. This innovation, with its industrial applicability for protective coatings, was introduced around 2010. This paper aims to provide an industrial perspective on HiPIMS, serving as a guide for scientists and engineers in comprehending and implementing HiPIMS solutions. It covers historical context and fundamental characteristics. Basic features as well as state-of-the-art configurations of PVD systems are also described. Graphical representations of experimental results illustrate HiPIMS features, including operational modes, deposition rate effects, thickness uniformity, and sustainability, particularly in terms of energy efficiency. The discussion focuses on the application prospects, advantages, and constraints of industrially applied HiPIMS protective coatings, emphasizing cutting and forming tools, within the context of the findings presented. [ABSTRACT FROM AUTHOR]
- Published
- 2023
- Full Text
- View/download PDF
44. High temperature decomposition and age hardening of single-phase wurtzite Ti$_{1-x}$Al$_{x}$N thin films grown by cathodic arc deposition
- Author
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Salamania, J., Bock, F., Johnson, L. J. S., Tasnádi, F., Kwick, K. M. Calamba, Farhadizaeh, A. F., Abrikosov, I. A., Rogström, L., and Odén, M.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Other Condensed Matter - Abstract
We investigated the high temperature decomposition behavior of wurtzite phase Ti$_{1-x}$Al$_{x}$N films using experimental methods and first-principles calculations. Single phase metastable wurtzite Ti$_{1-x}$Al$_{x}$N (x = 0.65, 0.75, 085 and 0.95) solid solution films were grown by cathodic arc deposition using low duty cycle pulsed substrate-bias voltage. First-principles calculated elastic constants of the wurtzite Ti$_{1-x}$Al$_{x}$N phase show a strong dependence on alloy composition. The predicted phase diagram shows a miscibility gap with an unstable region. High resolution scanning transmission electron microscopy and chemical mapping demonstrate decomposition of the films after high temperature annealing (950$^{\circ}$C), which resulted in nanoscale chemical compositional modulations containing Ti-rich and Al-rich regions with coherent or semi coherent interfaces. This spinodal decomposition of the wurtzite film causes age hardening of 1-2 GPa.
- Published
- 2023
45. Optimizing gas pressure for enhanced tribological properties of DLC-coated graphite.
- Author
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Samiee, M., Seyedraoufi, Z. S., Abbasi, M., Eshraghi, M. J., and Abouei, V.
- Subjects
PLASMA-enhanced chemical vapor deposition ,RAMAN microscopy ,NANOINDENTATION tests ,HARDNESS testing ,RAMAN spectroscopy - Abstract
In this study, for the first time, the optimization of applied pressure for achieving the one of the best tribological properties of diamond-like carbon (DLC) coating on graphite surface using plasma-enhanced chemical vapor deposition (PECVD) method was investigated. Raman spectroscopy and microscopy methods were used to characterize the applied coating. Additionally, the mechanical properties of the coating were investigated through nanoindentation testing. The wear resistance of coating has been tested as functional test. The results indicated that with increasing gas pressure, the sp
3 hybridization percentage decreases, while the ID /IG ratio increases. The average roughness values for the uncoated sample and the coated samples at working pressures of 25, 30, and 35 mTorr were obtained as 1.6, 5.1, 3, and 2.4 nm, respectively. The results of hardness and wear tests showed that these properties were optimized by reducing the applied gas pressure. The highest hardness was 11.59 GPa, and the best sample in terms of the mechanical properties of the coating was the sample applied at a gas pressure of 25 mTorr. Results show that the optimal sample in tribological performance is the one applied at a working pressure of 25 mTorr. Because this sample demonstrates the lowest coefficient of friction, and wear depth. [ABSTRACT FROM AUTHOR]- Published
- 2024
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- View/download PDF
46. Recent Advances in Aluminum Nitride (AlN) Growth by Magnetron Sputtering Techniques and Its Applications.
- Author
-
Jadoon, Nabeel Ahmad Khan, Puvanenthiram, Vaigunthan, Mosa, Mayada Ahmed Hassan, Sharma, Ashutosh, and Wang, Kaiying
- Subjects
ALUMINUM nitride ,THIN films ,ENERGY harvesting ,DC sputtering ,RESONATORS - Abstract
This review explores the processes involved in enhancing AlN film quality through various magnetron sputtering techniques, crucial for optimizing performance and expanding their application scope. It presents recent advancements in growing AlN thin films via magnetron sputtering, elucidating the mechanisms of AlN growth and navigating the complexities of thin-film fabrication. Emphasis is placed on different sputtering methods such as DC, RF, pulsed DC, and high-power impulse DC, highlighting how tailored sputtering conditions enhance film characteristics in each method. Additionally, the review discusses recent research findings showcasing the dynamic potential of these techniques. The practical applications of AlN thin films, including wave resonators, energy harvesting devices, and thermal management solutions, are outlined, demonstrating their relevance in addressing real-world engineering challenges. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
47. Pulse synchronized substrate bias for the High Power Pulsed Magnetron Sputtering deposition of CrAlN.
- Author
-
Bobzin, K., Brögelmann, T., Kruppe, N.C., Engels, M., and Schulze, C.
- Subjects
- *
MAGNETRON sputtering , *FLUX (Energy) , *COATING processes , *PLASMA diagnostics , *NITROGEN - Abstract
• Investigation of a CrAlN process on an industrial scale coating unit. • Analysis of a coating process using a pulsed substrate bias. • Correlation of plasma and coating properties. • Comparison of CrAlN processes using continuous and pulsed substrate bias. In a high power pulsed magnetron sputtering (HPPMS) process a substrate bias is applied to affect the ions in the coating chamber and therefore the coating properties. For this reason the present experiments on an industrial scale coating unit are focusing on the identification of correlations between plasma and coating properties for a CrAlN process while using a pulsed substrate bias. The measurements regarding the plasma properties were carried out on the substrate side for a better understanding of the interaction of plasma and coating properties. These investigations should point out the significant potential of plasma diagnostics for measuring plasma properties to contribute to improved coating processes using pulsed substrate bias U B,p. For this purpose a substrate bias synchronized to the HPPMS pulse is used since the pulsed bias can influence ions of a specific species. It was found that the even low values of a pulsed substrate bias lead to high values of the Debye sheath thickness and thus to a shielding of opposite surfaces. For complex shaped substrates like cemented carbide cutting inserts a better coatability for pulsed substrate bias up to U B, p = -150 V was reached. Also increased values of the mean ion energy and the ion flux density were found compared to the use of a continuous substrate bias. Regarding the chemical composition a significant higher nitrogen content of the coatings was found when using a pulsed substrate bias compared to the use of a continuous substrate bias. Comparing the indentation hardness of a process using a pulsed substrate bias increased hardness values were found compared to the use of a continuous substrate bias. Generally, a significant change of both, plasma and coating properties was found when changing the mode of substrate bias. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
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48. A Comparative Study on Al 0.6 Ti 0.4 N Coatings Deposited by Cathodic Arc and HiPIMS in End Milling of Stainless Steel 316L.
- Author
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Saciotto, Victor, He, Qianxi, Guimaraes, Monica C., DePaiva, Jose M., Kohlscheen, Joern, Fontana, Luis C., and Veldhuis, Stephen C.
- Subjects
AUSTENITIC stainless steel ,SURFACE energy ,STEEL alloys ,MAGNETRON sputtering ,CUTTING machines - Abstract
The machining of austenitic stainless steel alloys is usually characterized by high levels of adhesion and built-up edge; therefore, improving tribological conditions is fundamental to obtaining higher tool life and better surface finish. In this work, three different Al
0.6 Ti0.4 N coatings are compared, two deposited by Cathodic Arc Evaporation (CAE) and one with High-Power Impulse Magnetron Sputtering (HiPIMS). The effects of the micromechanical properties and the microstructure of the coatings were then studied and related to the machining performance. Both arc-deposited coatings (CAE 1 and 2) exhibited similar average tool life, 127 min and 128 min, respectively. Whereas the HiPIMS lasted for only 21.2 min, the HiPIMS-coated tool had a much shorter tool life (more than six times lower than both CAE coatings) due to the intense adhesion that occurred in the early stages of the tool life. This higher adhesion ultimately caused built-up edge and chipping of the tool. This was confirmed by the cutting forces and more deformation on the shear band and undersurface of the chips, which are related to higher levels of friction. The higher adhesion could be attributed to the columnar structure of the HiPIMS and the (111) main texture, which presents a higher surface energy when compared to the dominant (200) from both arc depositions. Studies focused on tribology are necessary to further understand this relationship. In terms of micromechanical properties, tools with the highest plasticity index performed better (CAE 2 = 0.544, CAE 1 = 0.532, and HiPIMS = 0.459). For interrupted cutting machining where adhesion is the main wear mechanism, a reserve of plasticity is beneficial to dissipate the energy generated during friction, even if this was related to lower hardness levels (CAE 2 = 26.6 GPa, CAE 1 = 29.9 GPa, and HiPIMS = 33.6 GPa), as the main wear mechanism was adhesive and not abrasive. [ABSTRACT FROM AUTHOR]- Published
- 2024
- Full Text
- View/download PDF
49. Dual sourced pulsed plasmas for the deposition of high performance, low friction, hard wearing films
- Author
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Freeman, John Alan
- Subjects
667.9 - Abstract
The work described in this thesis formed part of a larger collaborative project between Manchester Metropolitan University, the University of Liverpool, and our industry partner Teer Coatings Ltd., which was entitled "Dual source pulsed plasmas for the production of ultra-high performance coatings." Closed field unbalanced magnetron sputtering (CFUBMS) has become a mainstay of sputter deposition techniques. However improvements and new approaches are always being sought. This project has focused on the application of one variation, pulsed substrate bias (PSB) deposition, to the reactive sputter deposition of chromium nitride. CrxN is of great interest to industry, as it offers similar wear and corrosion resistance to the better known TiN, but with greater thermal stability. Pulsed substrate biasing is a relatively recent technology. It potentially allows scope for improvement of coating structure, and hence tribology, through greater ion bombardment of the coating during deposition. The initial aims of this project were: To characterise the pulsed CFUBMS system during reactive deposition of CrxN; to gain an understanding of the plasma behaviour and processes during deposition; to understand the influence of the pulsed plasma over coating microstructures, and relate relevant changes in these microstructures to changes in coating tribology. With the resultant data the project then turned to identifying the strengths and weaknesses of PSB deposition, and finding means to enhance coating performance using the technique. Plasma studies were largely undertaken at the University of Liverpool, using optical spectrometry, CCD camera imaging, and Langmuir probe measurements. Based on these finding 5 coatings were deposited at MMU, and subjected to structural and tribological tests such as scratch adhesion testing, nanoindentation, thrust washer wear testing, surface profilometry, and optical microscopy. Selected coatings were deposited onto cutting tools (twist drills) and tested to failure in a simulated industrial environment. Coating microstructure was investigated at MMU by SEM and EDS. Selected coatings were investigated by XRD at the University of Sofia, and by TEM at Oxford University. The pulsed CFUBMS system is shown to be adequately stable to reactively sputter CrxN. PSB deposition is shown to increase ion bombardment at the substrate. Enhanced ion bombardment is in turn related to the growth of a denser coating, with a more ordered crystallographic structure with greater surface hardness. However the PSB approach is also shown to increase compressive stress within the coating, and potentially damage effective adhesion. As a consequence we have sought to combine the DC bias and PSB methods, as well as changes in coating stoichiometry, in a series of layered coatings. The best performing of these layered coating architectures is significantly harder wearing than standard CrN coatings, and approaches the wear resistance of CrTiAlN coatings in drill tests. Pulsed substrate bias deposition is a potentially powerful addition to the portfolio of sputter coating techniques. Here it has been successfully applied to enhance the microstructure, tribology, and wear resistance of CrxN coatings.
- Published
- 2012
50. Metal-ion subplantation: A game changer for controlling nanostructure and phase formation during film growth by physical vapor deposition
- Author
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Greczynski, Grzegorz, Mraz, S., Schneider, J. M., Hultman, Lars, Greczynski, Grzegorz, Mraz, S., Schneider, J. M., and Hultman, Lars
- Abstract
Up until recently, thin film growth by magnetron sputtering relied on enhancing adatom mobility in the surface region by gas-ion irradiation to obtain dense layers at low deposition temperatures. However, an inherently low degree of ionization in the sputtered material flux during direct-current magnetron sputtering (DCMS), owing to relatively low plasma densities involved, prevented systematic exploration of the effects of metal-ion irradiation on the film nanostructure, phase content, and physical properties. Employing only gas-ion bombardment results in an inefficient energy and momentum transfer to the growing film surface. Also, for enhanced substrate biasing, the higher concentration of implanted noble gas atoms at interstitial lattice positions causes elevated compressive stress levels. High-power impulse magnetron sputtering (HiPIMS), however, provides controllable metal-ion ionization and, more importantly, enables the minimization of adverse gas-ion irradiation effects. The latter can be realized by the use of pulsed substrate bias applied synchronously with the metal-ion-rich portion of each HiPIMS pulse (metal-ion-synchronized HiPIMS), based on the results of time-resolved ion mass spectrometry analyses performed at the substrate position. In this way, both the metal-ion energy and the momentum can be precisely controlled for one to exploit the benefits of irradiation by metal-ions, which are also the film-forming species. Systematic studies performed in recent years using binary and ternary transition metal-based nitrides as model systems revealed new phenomena with accompanying unique and attractive film growth pathways. This Perspective paper focuses on the effects of low-mass metal-ion irradiation and their role for the nanostructure and phase control. We review basic findings and present original results from ion mass spectrometry studies and materials characterization for the effect of metal-ion subplantation. Key correlations are highlighted, whic, Funding Agencies|Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW2016.0358]; VINN Excellence Center Functional Nanoscale Materials (FunMat-2) Grant [2016-05156]; Swedish Research Council VR Grant [2018-03957]; VINNOVA GrantVinnova [2019-04882]; Angstromforsk Foundation [16-359]; Carl Tryggers Stiftelse [CTS 17:166]; German Research Foundation (DFG)German Research Foundation (DFG) [SFB-TR 87]
- Published
- 2020
- Full Text
- View/download PDF
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