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261 results on '"Kumar, Suhas"'

2. Energy Efficient Knapsack Optimization Using Probabilistic Memristor Crossbars

Author

Li, Jinzhan, Kumar, Suhas, and Yi, Su-in

Subjects
Computer Science - Emerging Technologies
Abstract

Constrained optimization underlies crucial societal problems (for instance, stock trading and bandwidth allocation), but is often computationally hard (complexity grows exponentially with problem size). The big-data era urgently demands low-latency and low-energy optimization at the edge, which cannot be handled by digital processors due to their non-parallel von Neumann architecture. Recent efforts using massively parallel hardware (such as memristor crossbars and quantum processors) employing annealing algorithms, while promising, have handled relatively easy and stable problems with sparse or binary representations (such as the max-cut or traveling salesman problems).However, most real-world applications embody three features, which are encoded in the knapsack problem, and cannot be handled by annealing algorithms - dense and non-binary representations, with destabilizing self-feedback. Here we demonstrate a post-digital-hardware-friendly randomized competitive Ising-inspired (RaCI) algorithm performing knapsack optimization, experimentally implemented on a foundry-manufactured CMOS-integrated probabilistic analog memristor crossbar. Our solution outperforms digital and quantum approaches by over 4 orders of magnitude in energy efficiency., Comment: 16 pages, 8 figures

Published
2024

3. True random number generation using the spin crossover in LaCoO3

Author

Woo, Kyung Seok, Zhang, Alan, Arabelo, Allison, Brown, Timothy D, Park, Minseong, Talin, A Alec, Fuller, Elliot J, Bisht, Ravindra Singh, Qian, Xiaofeng, Arroyave, Raymundo, Ramanathan, Shriram, Thomas, Luke, Williams, R Stanley, and Kumar, Suhas

Subjects
Information and Computing Sciences, Applied Computing
Abstract

While digital computers rely on software-generated pseudo-random number generators, hardware-based true random number generators (TRNGs), which employ the natural physics of the underlying hardware, provide true stochasticity, and power and area efficiency. Research into TRNGs has extensively relied on the unpredictability in phase transitions, but such phase transitions are difficult to control given their often abrupt and narrow parameter ranges (e.g., occurring in a small temperature window). Here we demonstrate a TRNG based on self-oscillations in LaCoO3 that is electrically biased within its spin crossover regime. The LaCoO3 TRNG passes all standard tests of true stochasticity and uses only half the number of components compared to prior TRNGs. Assisted by phase field modeling, we show how spin crossovers are fundamentally better in producing true stochasticity compared to traditional phase transitions. As a validation, by probabilistically solving the NP-hard max-cut problem in a memristor crossbar array using our TRNG as a source of the required stochasticity, we demonstrate solution quality exceeding that using software-generated randomness.

Published
2024

4. Investigation of the Behavior of Cable Stayed Bridges for Different Heights of Pylon

Author

Kumar, Suhas V., Rahman, Tauhidur, di Prisco, Marco, Series Editor, Chen, Sheng-Hong, Series Editor, Vayas, Ioannis, Series Editor, Kumar Shukla, Sanjay, Series Editor, Sharma, Anuj, Series Editor, Kumar, Nagesh, Series Editor, Wang, Chien Ming, Series Editor, Cui, Zhen-Dong, Series Editor, Lu, Xinzheng, Series Editor, Janardhan, Prashanth, editor, Choudhury, Parthasarathi, editor, and Kumar, D. Nagesh, editor

Published
2025
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5. Axon-like active signal transmission

Author

Brown, Timothy D., Zhang, Alan, Nitta, Frederick U., Grant, Elliot D., Chong, Jenny L., Zhu, Jacklyn, Radhakrishnan, Sritharini, Islam, Mahnaz, Fuller, Elliot J., Talin, A. Alec, Shamberger, Patrick J., Pop, Eric, Williams, R. Stanley, and Kumar, Suhas

Published
2024
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7. Energy-based learning algorithms for analog computing: a comparative study

Author

Scellier, Benjamin, Ernoult, Maxence, Kendall, Jack, and Kumar, Suhas

Subjects
Computer Science - Machine Learning, Computer Science - Computer Vision and Pattern Recognition
Abstract

Energy-based learning algorithms have recently gained a surge of interest due to their compatibility with analog (post-digital) hardware. Existing algorithms include contrastive learning (CL), equilibrium propagation (EP) and coupled learning (CpL), all consisting in contrasting two states, and differing in the type of perturbation used to obtain the second state from the first one. However, these algorithms have never been explicitly compared on equal footing with same models and datasets, making it difficult to assess their scalability and decide which one to select in practice. In this work, we carry out a comparison of seven learning algorithms, namely CL and different variants of EP and CpL depending on the signs of the perturbations. Specifically, using these learning algorithms, we train deep convolutional Hopfield networks (DCHNs) on five vision tasks (MNIST, F-MNIST, SVHN, CIFAR-10 and CIFAR-100). We find that, while all algorithms yield comparable performance on MNIST, important differences in performance arise as the difficulty of the task increases. Our key findings reveal that negative perturbations are better than positive ones, and highlight the centered variant of EP (which uses two perturbations of opposite sign) as the best-performing algorithm. We also endorse these findings with theoretical arguments. Additionally, we establish new SOTA results with DCHNs on all five datasets, both in performance and speed. In particular, our DCHN simulations are 13.5 times faster with respect to Laborieux et al. (2021), which we achieve thanks to the use of a novel energy minimisation algorithm based on asynchronous updates, combined with reduced precision (16 bits)., Comment: NeurIPS 2023

Published
2023

9. Thermodynamic origin of nonvolatility in resistive memory

Author

Li, Jingxian, Appachar, Anirudh, Peczonczyk, Sabrina L., Harrison, Elisa T., Ievlev, Anton V., Hood, Ryan, Shin, Dongjae, Yoo, Sangmin, Roest, Brianna, Sun, Kai, Beckmann, Karsten, Popova, Olya, Chiang, Tony, Wahby, William S., Jacobs-Godrim, Robin B., Marinella, Matthew J., Maksymovych, Petro, Heron, John T., Cady, Nathaniel, Lu, Wei D., Kumar, Suhas, Talin, A. Alec, Sun, Wenhao, and Li, Yiyang

Published
2024
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10. Improved Hopfield Network Optimization using Manufacturable Three-terminal Electronic Synapses

Author

Yi, Su-in, Kumar, Suhas, and Williams, R. Stanley

Subjects
Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

We describe via simulation novel optimization algorithms for a Hopfield neural network constructed using manufacturable three-terminal Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) synaptic devices. We first present a computationally-light, memristor-based, highly accurate compact model for the SONOS. Using the compact model, we describe techniques of simulated annealing in Hopfield networks by exploiting imperfect problem definitions, current leakage, and the continuous tunability of the SONOS to enable transient chaotic group dynamics. We project improvements in energy consumption and latency for optimization relative to the best CPUs and GPUs by at least 4 orders of magnitude, and also exceeding the best projected memristor-based hardware; along with a 100-fold increase in error-resilient hardware size (i.e., problem size)., Comment: 8 pages, 6 figures

Published
2021

11. Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction

Author

Sood, Aditya, Shen, Xiaozhe, Shi, Yin, Kumar, Suhas, Park, Su Ji, Zajac, Marc, Sun, Yifei, Chen, Long-Qing, Ramanathan, Shriram, Wang, Xijie, Chueh, William C., and Lindenberg, Aaron M.

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales underlying the electrically-driven insulator-metal transition is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide switches. We discover an electrically-triggered, isostructural state that forms transiently on microsecond timescales, stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase bears striking similarity to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway across eight orders of magnitude of timescale. Our results establish a new route for uncovering non-equilibrium and metastable phases in correlated materials, and open avenues for engineering novel dynamical behavior in nanoelectronics.

Published
2021
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12. Size scaling, dynamics, and electro-thermal bifurcation of VO2 Mott oscillators

Author

Bohaichuk, Stephanie M., Kumar, Suhas, Rojo, Miguel Muñoz, Williams, R. Stanley, Islam, Mahnaz, Pitner, Gregory, Jeong, Jaewoo, Samant, Mahesh G., Parkin, Stuart S. P., and Pop, Eric

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm effective sizes, achieved using a nanogap cut in a metallic carbon nanotube (CNT) electrode, does not guarantee faster spiking. However, an additional heat source such as Joule heating from the CNT, in combination with small size and heat capacity (defined by the narrow volume of VO2 whose insulator-metal transition is triggered by the CNT), can increase the spiking frequency by ~1000x due to an electro-thermal bifurcation in the nonlinear dynamics. These results demonstrate that nonlinear dynamical switches operate in a complex phase space which can be controlled by careful electro-thermal design, offering new tuning parameters for designing future biomimetic electronics.

Published
2020

15. Thermodynamic Computing

Author

Conte, Tom, DeBenedictis, Erik, Ganesh, Natesh, Hylton, Todd, Strachan, John Paul, Williams, R. Stanley, Alemi, Alexander, Altenberg, Lee, Crooks, Gavin, Crutchfield, James, del Rio, Lidia, Deutsch, Josh, DeWeese, Michael, Douglas, Khari, Esposito, Massimiliano, Frank, Michael, Fry, Robert, Harsha, Peter, Hill, Mark, Kello, Christopher, Krichmar, Jeff, Kumar, Suhas, Liu, Shih-Chii, Lloyd, Seth, Marsili, Matteo, Nemenman, Ilya, Nugent, Alex, Packard, Norman, Randall, Dana, Sadowski, Peter, Santhanam, Narayana, Shaw, Robert, Stieg, Adam, Stopnitzky, Elan, Teuscher, Christof, Watkins, Chris, Wolpert, David, Yang, Joshua, and Yufik, Yan

Subjects
Computer Science - Computers and Society, Computer Science - Emerging Technologies
Abstract

The hardware and software foundations laid in the first half of the 20th Century enabled the computing technologies that have transformed the world, but these foundations are now under siege. The current computing paradigm, which is the foundation of much of the current standards of living that we now enjoy, faces fundamental limitations that are evident from several perspectives. In terms of hardware, devices have become so small that we are struggling to eliminate the effects of thermodynamic fluctuations, which are unavoidable at the nanometer scale. In terms of software, our ability to imagine and program effective computational abstractions and implementations are clearly challenged in complex domains. In terms of systems, currently five percent of the power generated in the US is used to run computing systems - this astonishing figure is neither ecologically sustainable nor economically scalable. Economically, the cost of building next-generation semiconductor fabrication plants has soared past $10 billion. All of these difficulties - device scaling, software complexity, adaptability, energy consumption, and fabrication economics - indicate that the current computing paradigm has matured and that continued improvements along this path will be limited. If technological progress is to continue and corresponding social and economic benefits are to continue to accrue, computing must become much more capable, energy efficient, and affordable. We propose that progress in computing can continue under a united, physically grounded, computational paradigm centered on thermodynamics. Herein we propose a research agenda to extend these thermodynamic foundations into complex, non-equilibrium, self-organizing systems and apply them holistically to future computing systems that will harness nature's innate computational capacity. We call this type of computing "Thermodynamic Computing" or TC., Comment: A Computing Community Consortium (CCC) workshop report, 36 pages

Published
2019

16. Harnessing Intrinsic Noise in Memristor Hopfield Neural Networks for Combinatorial Optimization

Author

Cai, Fuxi, Kumar, Suhas, Van Vaerenbergh, Thomas, Liu, Rui, Li, Can, Yu, Shimeng, Xia, Qiangfei, Yang, J. Joshua, Beausoleil, Raymond, Lu, Wei, and Strachan, John Paul

Subjects
Computer Science - Emerging Technologies
Abstract

We describe a hybrid analog-digital computing approach to solve important combinatorial optimization problems that leverages memristors (two-terminal nonvolatile memories). While previous memristor accelerators have had to minimize analog noise effects, we show that our optimization solver harnesses such noise as a computing resource. Here we describe a memristor-Hopfield Neural Network (mem-HNN) with massively parallel operations performed in a dense crossbar array. We provide experimental demonstrations solving NP-hard max-cut problems directly in analog crossbar arrays, and supplement this with experimentally-grounded simulations to explore scalability with problem size, providing the success probabilities, time and energy to solution, and interactions with intrinsic analog noise. Compared to fully digital approaches, and present-day quantum and optical accelerators, we forecast the mem-HNN to have over four orders of magnitude higher solution throughput per power consumption. This suggests substantially improved performance and scalability compared to current quantum annealing approaches, while operating at room temperature and taking advantage of existing CMOS technology augmented with emerging analog non-volatile memristors.

Published
2019

17. Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device

Author

Bohaichuk, Stephanie M., Kumar, Suhas, Pitner, Greg, McClellan, Connor J., Jeong, Jaewoo, Samant, Mahesh G., Wong, H-. S. Philip, Parkin, Stuart S. P., Williams, R. Stanley, and Pop, Eric

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and energy-efficient spiking could significantly advance these applications. Here we demonstrate DC-current or voltage-driven periodic spiking with sub-20 ns pulse widths from a single device composed of a thin VO2 film with a metallic carbon nanotube as a nanoscale heater. Compared with VO2-only devices, adding the nanotube heater dramatically decreases the transient duration and pulse energy, and increases the spiking frequency, by up to three orders of magnitude. This is caused by heating and cooling of the VO2 across its insulator-metal transition being localized to a nanoscale conduction channel in an otherwise bulk medium. This result provides an important component of energy-efficient neuromorphic computing systems, and a lithography-free technique for power-scaling of electronic devices that operate via bulk mechanisms.

Published
2019
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18. Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation.

Author

Gurrola, Rebeca M., Cain, John M., Oh, Sangheon, Brown, Timothy D., Jardali, Fatme, Schoell, Ryan M., Yadav, Digvijay R., Dong, Jiaqi, Smyth, Christopher M., Pharr, Matt, Kumar, Suhas, Xie, Kelvin, Hattar, Khalid, Talin, A. Alec, Lu, Tzu-Ming, and Shamberger, Patrick J.

Subjects
ELECTRONIC modulation, HELIUM ions, METAL-insulator transitions, POINT defects, VANADIUM dioxide, IRRADIATION
Abstract

Vanadium dioxide (VO2) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modulate electronic transport in VO2, as well as its response to irradiation (e.g., for space applications), is critical to better enable these applications. In this work, we investigate the selective modulation of electronic transport in VO2 films subject to different 10 keV helium ion (He+) fluences. Under these conditions, the resistivity in the individual monoclinic and rutile phases varied by 50%–200%, while the MIT transformation temperature remains constant within 4 °C independent of irradiation fluence. Importantly, different trends in the resistivity of the monoclinic and rutile phases were observed both as a function of total He fluence as well as in films grown on different substrates (amorphous SiO2/Si vs single crystal Al2O3). Through a combination of measurements including majority carrier sign via Seebeck, low frequency noise, and TEM, our investigation supports the presence of different kinds of point defects (V in; O in), which may arise due to grain boundary defect interactions. Our work suggests the utility of He irradiation for the selective modulation of VO2 transport properties for neuromorphic, in contrast to other established but non-selective methods, like doping. [ABSTRACT FROM AUTHOR]

Published
2024
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21. Oxygen migration during resistance switching and failure of hafnium oxide memristors

Author

Kumar, Suhas, Wang, Ziwen, Huang, Xiaopeng, Kumari, Niru, Davila, Noraica, Strachan, John Paul, Vine, David, Kilcoyne, A. L. David, Nishi, Yoshio, and Williams, R. Stanley

Subjects
Condensed Matter - Materials Science
Abstract

While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Here we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfOx memristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information, we reengineered devices to mitigate three failure mechanisms, and demonstrated an improvement in endurance of about three orders of magnitude., Comment: 5 pages, 4 figures

Published
2017
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22. Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors

Author

Kumar, Suhas, Davila, Noraica, Wang, Ziwen, Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, A. L. David, Nishi, Yoshio, and Williams, R. Stanley

Subjects
Condensed Matter - Materials Science
Abstract

We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in-operando synchrotron x-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications., Comment: 5 pages 4 fgures

Published
2017
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23. Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

Author

Kumar, Suhas, Wang, Ziwen, Huang, Xiaopeng, Kumari, Niru, Davila, Noraica, Strachan, John Paul, Vine, David, Kilcoyne, A. L. David, Nishi, Yoshio, and Williams, R. Stanley

Subjects
Condensed Matter - Materials Science
Abstract

Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physico-chemical forces, which remains elusive and controversial owing to the difficulties in directly observing atomic motions during resistive switching, Here, using scanning transmission synchrotron x-ray spectromicroscopy to study in-situ switching of hafnium oxide memristors, we directly observed the formation of a localized oxygen-deficiency-derived conductive channel surrounded by a low-conductivity ring of excess oxygen. Subsequent thermal annealing homogenized the segregated oxygen, resetting the cells towards their as-grown resistance state. We show that the formation and dissolution of the conduction channel are successfully modeled by radial thermophoresis and Fick diffusion of oxygen atoms driven by Joule heating. This confirmation and quantification of two opposing nanoscale radial forces that affect bipolar memristor switching are important components for any future physics-based compact model for the electronic switching of these devices., Comment: 6 pages and 4 figures

Published
2017
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25. Picosecond carrier dynamics in InAs and GaAs revealed by ultrafast electron microscopy

Author

Perez, Christopher, primary, Ellis, Scott R., additional, Alcorn, Francis M., additional, Smoll, Eric J., additional, Fuller, Elliot J., additional, Leonard, Francois, additional, Chandler, David, additional, Talin, A. Alec, additional, Bisht, Ravindra Singh, additional, Ramanathan, Shriram, additional, Goodson, Kenneth E., additional, and Kumar, Suhas, additional

Published
2024
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26. Smart packaging of electronics and integrated MEMS devices using LTCC

Author

Kumar, Suhas and Vadiraj, A. M.

Subjects
Condensed Matter - Materials Science
Abstract

Low Temperature Cofired Ceramics (LTCC) has been a popular multi layer ceramic (MCM) packaging material for many electronic applications. The main advantage with LTCC would be its ability to embed a major part of the electronic circuit within itself, apart from its enhanced RF functionality as against many lossy materials used. The advantages of LTCC in terms of frequency response, cost, ease of fabrication, etc over many other packaging materials are presented. The applicability of LTCC as a packaging material, circuit mounting material, substrate material or a base material for micro devices is discussed. Switches and filters fabricated on LTCC as a substrate are presented and their enhanced functionality is shown. Planar switches and RF MEMS switches on LTCC are discussed with regard to their isolation, insertion losses, return losses, repeatability, quality factor, parasitic effects and frequency response. Concern is also shown to parameters like actuation voltages, actuation times and complexity of fabrication. The parameters studied with design and fabrication of filters is also discussed, like Q factor, dispersive effects, limits on frequencies, etc. Discussion is also done with regard to LTCC as a base material for MEMS sensors and actuators and the performance variables of the same. Fabrication process parameters are presented. The important issue of feasibility of integration with microelectronic integrated circuitry is discussed and its effects are shown., Comment: 6 pages, 13 figures, International Conference on Active/Smart Materials (ICASM)

Published
2016

27. Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

Author

Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Kilcoyne, Arthur L. David, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, and Williams, R. Stanley

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately., Comment: 7 pages, Advanced Materials (2016); updated abstract

Published
2016
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28. Physical origins of current and temperature controlled negative differential resistances in NbO2.

Author

Kumar, Suhas, Wang, Ziwen, Davila, Noraica, Kumari, Niru, Norris, Kate J, Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, AL David, Nishi, Yoshio, and Williams, R Stanley

Abstract

Negative differential resistance behavior in oxide memristors, especially those using NbO2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here we examine NbO2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.

Published
2017

29. The phase transition in VO2 probed using x-ray, visible and infrared radiations

Author

Kumar, Suhas, Strachan, John Paul, Kilcoyne, A. L. David, Tyliszczak, Tolek, Pickett, Matthew D., Santori, Charles, Gibson, Gary, and Williams, R. Stanley

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

Vanadium dioxide (VO2) is a model system that has been used to understand closely-occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical information provided by different probing radiations is incomplete, mostly owing to the complicated nature of the phase transitions. Here we use transmission of spatially averaged infrared ({\lambda}=1500 nm) and visible ({\lambda}=500 nm) radiations followed by spectroscopy and nanoscale imaging using x-rays ({\lambda}=2.25-2.38 nm) to probe the same VO2 sample while controlling the ambient temperature across its hysteretic phase transitions and monitoring its electrical resistance. We directly observed nanoscale puddles of distinct electronic and structural compositions during the transition. The two main results are that, during both heating and cooling, the transition of infrared and visible transmission occur at significantly lower temperatures than the Mott transition; and the electronic (Mott) transition occurs before the structural (Peierls) transition in temperature. We use our data to provide insights into possible microphysical origins of the different transition characteristics. We highlight that it is important to understand these effects because small changes in the nature of the probe can yield quantitatively, and even qualitatively, different results when applied to a non-trivial multiband phase transition. Our results guide more judicious use of probe type and interpretation of the resulting data., Comment: updated DOI and citation information

Published
2015
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30. Atomic Batteries: Energy from Radioactivity

Author

Kumar, Suhas

Subjects
Condensed Matter - Materials Science
Abstract

With alternate, sustainable, natural sources of energy being sought after, there is new interest in energy from radioactivity, including natural and waste radioactive materials. A study of various atomic batteries is presented with perspectives of development and comparisons of performance parameters and cost. We discuss radioisotope thermal generators, indirect conversion batteries, direct conversion batteries, and direct charge batteries. We qualitatively describe their principles of operation and their applications. We project possible market trends through our comparative cost analysis. We also explore a future direction for certain atomic batteries by using nanomaterials to improve their performance., Comment: review; v2 with corrected text

Published
2015

31. Fundamental Limits to Moore's Law

Author

Kumar, Suhas

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The theoretical and practical aspects of the fundamental, ultimate, physical limits to scaling, or Moore-s law, is presented.

Published
2015

32. Characterization of electronic structure of periodically strained graphene

Author

Aslani, Marjan, Garner, C. Michael, Kumar, Suhas, Nordlund, Dennis, Pianetta, Piero, and Nishi, Yoshio

Subjects
Condensed Matter - Materials Science
Abstract

We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands. We measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.

Published
2015
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33. Sequential Electronic and Structural Transitions in VO2 Observed Using X-ray Absorption Spectromicroscopy

Author

Kumar, Suhas, Strachan, John Paul, Pickett, Matthew D., Bratkovsky, Alexander, Nishi, Yoshio, and Williams, R. Stanley

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science
Abstract

The popular dual electronic (Mott) and structural (Peierls) transitions in VO2 are explored using x-ray absorption spectromicroscopy with high spatial and spectral resolutions. It is found that during both heating and cooling, the electronic transition always precedes the structural Peierls transition. Between the two transitions, there are intermediate states that are spectrally isolated here., Comment: reordered sections

Published
2015
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34. Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2

Author

Kumar, Suhas, Pickett, Matthew D., Strachan, John Paul, Gibson, Gary, Nishi, Yoshio, and Williams, R. Stanley

Subjects
Condensed Matter - Materials Science
Abstract

Joule-heating induced conductance-switching is studied in VO2, a Mott insulator. Complementary in-situ techniques including optical characterization, blackbody microscopy, scanning transmission x-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.

Published
2015
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35. In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Author

Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Kilcoyne, A. L. David, Tyliszczak, Tolek, Nishi, Yoshio, and Williams, R. Stanley

Subjects
Condensed Matter - Materials Science
Abstract

Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study, we probed the atomic composition, local chemistry and electronic structure of functioning tantalum oxide memristors through spatially mapped O K-edge x-ray absorption. We developed a time-multiplexed spectromicroscopy technique to enhance the weak and possibly localized oxide modifications with spatial and spectral resolutions of <30 nm and 70 meV, respectively. During the initial stages of conductance switching of a micrometer sized crosspoint device, the spectral changes were uniform within the spatial resolution of our technique. When the device was further driven with millions of high voltage-pulse cycles, we observed lateral motion and separation of ~100 nm-scale agglomerates of both oxygen interstitials and vacancies. We also demonstrate a unique capability of this technique by identifying the relaxation behavior in the material during electrical stimuli by identifying electric field driven changes with varying pulse widths. In addition, we show that changes to the material can be localized to a spatial region by modifying its topography or uniformity, as against spatially uniform changes observed here during memristive switching. The goal of this report is to introduce the capability of time-multiplexed x-ray spectromicroscopy in studying weak-signal transitions in inhomogeneous media through the example of the operation and temporal evolution of a memristor.

Published
2015
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39. Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation

Author

Gurrola, Rebeca M., primary, Cain, John M., additional, Oh, Sangheon, additional, Brown, Timothy D., additional, Jardali, Fatme, additional, Schoell, Ryan M., additional, Yadav, Digvijay R., additional, Dong, Jiaqi, additional, Smyth, Christopher M., additional, Pharr, Matt, additional, Kumar, Suhas, additional, Xie, Kelvin, additional, Hattar, Khalid, additional, Talin, A. Alec, additional, Lu, Tzu-Ming, additional, and Shamberger, Patrick J., additional

Published
2024
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40. Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

Author

Kumar, Suhas, Wang, Ziwen, Huang, Xiaopeng, Kumari, Niru, Davila, Noraica, Strachan, John Paul, Vine, David, Kilcoyne, AL David, Nishi, Yoshio, and Williams, R Stanley

Subjects
Physical Sciences, Engineering, Nanotechnology, memristors, thermophoresis, operating mechanism, oxygen migration, filament, cond-mat.mtrl-sci, Nanoscience & Nanotechnology
Abstract

Transition-metal-oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physicochemical forces, which remains elusive and controversial owing to the difficulties in directly observing atomic motions during resistive switching, Here, using scanning transmission synchrotron X-ray spectromicroscopy to study in situ switching of hafnium oxide memristors, we directly observed the formation of a localized oxygen-deficiency-derived conductive channel surrounded by a low-conductivity ring of excess oxygen. Subsequent thermal annealing homogenized the segregated oxygen, resetting the cells toward their as-grown resistance state. We show that the formation and dissolution of the conduction channel are successfully modeled by radial thermophoresis and Fick diffusion of oxygen atoms driven by Joule heating. This confirmation and quantification of two opposing nanoscale radial forces that affect bipolar memristor switching are important components for any future physics-based compact model for the electronic switching of these devices.

Published
2016

41. The phase transition in VO2 probed using x-ray, visible and infrared radiations

Author

Kumar, Suhas, Strachan, John Paul, Kilcoyne, AL David, Tyliszczak, Tolek, Pickett, Matthew D, Santori, Charles, Gibson, Gary, and Williams, R Stanley

Subjects
Physical Sciences, Engineering, Technology, Applied Physics
Abstract

Vanadium dioxide (VO2) is a model system that has been used to understand closely occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical information provided by different probing radiations is incomplete, mostly owing to the complicated nature of the phase transitions. Here, we use transmission of spatially averaged infrared (λ = 1.5 μm) and visible (λ = 500 nm) radiations followed by spectroscopy and nanoscale imaging using x-rays (λ = 2.25-2.38 nm) to probe the same VO2 sample while controlling the ambient temperature across its hysteretic phase transitions and monitoring its electrical resistance. We directly observed nanoscale puddles of distinct electronic and structural compositions during the transition. The two main results are that, during both heating and cooling, the transition of infrared and visible transmission occurs at significantly lower temperatures than the Mott transition, and the electronic (Mott) transition occurs before the structural (Peierls) transition in temperature. We use our data to provide insights into possible microphysical origins of the different transition characteristics. We highlight that it is important to understand these effects because small changes in the nature of the probe can yield quantitatively, and even qualitatively, different results when applied to a non-trivial multiband phase transition. Our results guide more judicious use of probe type and interpretation of the resulting data.

Published
2016

42. Third-order nanocircuit elements for neuromorphic engineering

Author

Kumar, Suhas, Williams, R. Stanley, and Wang, Ziwen

Subjects
Circuit design -- Technology application -- Innovations, Biomimetics -- Methods, Nanotechnology -- Usage, Neural networks -- Design and construction, Integrated circuit design, Neural network, Circuit designer, Technology application, Environmental issues, Science and technology, Zoology and wildlife conservation
Abstract

Current hardware approaches to biomimetic or neuromorphic artificial intelligence rely on elaborate transistor circuits to simulate biological functions. However, these can instead be more faithfully emulated by higher-order circuit elements that naturally express neuromorphic nonlinear dynamics.sup.1-4. Generating neuromorphic action potentials in a circuit element theoretically requires a minimum of third-order complexity (for example, three dynamical electrophysical processes).sup.5, but there have been few examples of second-order neuromorphic elements, and no previous demonstration of any isolated third-order element.sup.6-8. Using both experiments and modelling, here we show how multiple electrophysical processes--including Mott transition dynamics--form a nanoscale third-order circuit element. We demonstrate simple transistorless networks of third-order elements that perform Boolean operations and find analogue solutions to a computationally hard graph-partitioning problem. This work paves a way towards very compact and densely functional neuromorphic computing primitives, and energy-efficient validation of neuroscientific models. Electrophysical processes are used to create third-order nanoscale circuit elements, and these are used to realize a transistorless network that can perform Boolean operations and find solutions to a computationally hard graph-partitioning problem., Author(s): Suhas Kumar [sup.1] , R. Stanley Williams [sup.2] , Ziwen Wang [sup.3] Author Affiliations: (1) Hewlett Packard Labs, Palo Alto, USA (2) Texas A&M University, College Station, USA (3) [...]

Published
2020
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44. True random number generation using the spin crossover in LaCoO3.

Author

Woo, Kyung Seok, Zhang, Alan, Arabelo, Allison, Brown, Timothy D., Park, Minseong, Talin, A. Alec, Fuller, Elliot J., Bisht, Ravindra Singh, Qian, Xiaofeng, Arroyave, Raymundo, Ramanathan, Shriram, Thomas, Luke, Williams, R. Stanley, and Kumar, Suhas

Subjects
SPIN crossover, RANDOM numbers, RANDOM number generators, PHASE transitions, NP-hard problems
Abstract

While digital computers rely on software-generated pseudo-random number generators, hardware-based true random number generators (TRNGs), which employ the natural physics of the underlying hardware, provide true stochasticity, and power and area efficiency. Research into TRNGs has extensively relied on the unpredictability in phase transitions, but such phase transitions are difficult to control given their often abrupt and narrow parameter ranges (e.g., occurring in a small temperature window). Here we demonstrate a TRNG based on self-oscillations in LaCoO3 that is electrically biased within its spin crossover regime. The LaCoO3 TRNG passes all standard tests of true stochasticity and uses only half the number of components compared to prior TRNGs. Assisted by phase field modeling, we show how spin crossovers are fundamentally better in producing true stochasticity compared to traditional phase transitions. As a validation, by probabilistically solving the NP-hard max-cut problem in a memristor crossbar array using our TRNG as a source of the required stochasticity, we demonstrate solution quality exceeding that using software-generated randomness. Probabilistic computing demands low power and high quality random number generation. Woo et al. demonstrate the use of a spin crossover in LaCoO3 to generate random numbers that outperform software-generated random numbers in probabilistic computing. [ABSTRACT FROM AUTHOR]

Published
2024
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45. "A COMPARATIVE STUDY BETWEEN FNAC AND EXCISION BIOPSY IN THE DIAGNOSIS OF LYMPH NODE DISEASE IN A.J. INSTITUTE OF MEDICAL SCIENCESMANGALORE".

Author

Kumar, Suhas S., Karthikeyan, K., Narayana, Manisha, and C. K., Akshai

Subjects
*LYMPH nodes, *DIAGNOSIS, *NEEDLE biopsy, *BIOPSY, *LYMPHADENITIS, *COMPARATIVE studies
Abstract

Introduction: Accurate and timely diagnosis of lymph node pathology is crucial for appropriate management and prognostication. This study aimed to compare the diagnostic accuracy of fine-needle aspiration cytology (FNAC) and excision biopsy in the diagnosis of various lymph node diseases. Materials and methods: A total of 250 patients with lymphadenopathy underwent FNAC and excision biopsy at a tertiary care center between September 2013 and September 2015. The diagnostic performance of FNAC was evaluated using sensitivity, specificity, positive predictive value (PPV), and negative predictive value (NPV). Results: Tuberculosis lymphadenitis (TBLN) was the most common diagnosis, accounting for 41.6% of cases on FNAC and 46% on excision biopsy. FNAC had a sensitivity of 90.4% and a PPV of 100% in the diagnosis of TBLN. For metastatic carcinoma, FNAC demonstrated a sensitivity of 84.2%, a specificity of 98.71%, a PPV of 97.56%, and an NPV of 91.07%. The overall sensitivity of FNAC in the diagnosis of lymph node diseases was 83.6%, with a PPV of 100%. Conclusion: FNAC exhibited excellent diagnostic accuracy in the evaluation of TBLN and metastatic carcinoma, supporting its use as a reliable, minimally invasive, and cost-effective first-line investigation in the management of lymphadenopathy. While excision biopsy remains the gold standard, the high diagnostic performance of FNAC, as demonstrated in this study, highlights its clinical utility in guiding further diagnostic and treatment decisions. [ABSTRACT FROM AUTHOR]

Published
2024

46. List of contributors

Author

Ambrogio, Stefano, primary, Ben-Hur, Rotem, additional, Bohaichuk, Stephanie, additional, Brivio, Stefano, additional, Burr, Geoffrey W., additional, Chang, Meng-Fan, additional, Chekol, Solomon Amsalu, additional, Dalgaty, Thomas, additional, Dou, Chunmeng, additional, Eltawil, Ahmed, additional, Fouda, Mohammed E., additional, Gao, Bin, additional, Grollier, Julie, additional, Haj-Ali, Ameer, additional, Herrera Diez, Liza, additional, Hwang, Hyunsang, additional, Ielmini, Daniele, additional, Indiveri, Giacomo, additional, Kumar, Suhas, additional, Kurdahi, Fadi, additional, Kvatinsky, Shahar, additional, Laurent, Raphaël, additional, Le Gallo, Manuel, additional, Li, Haitong, additional, Lim, Seokjae, additional, Linares-Barranco, Bernabé, additional, Locatelli, Nicolas, additional, Lu, Wei D., additional, Mackin, Charles, additional, Menzel, Stephan, additional, Midya, Rivu, additional, Mikolajick, Thomas, additional, Milo, Valerio, additional, Mitra, Subhasish, additional, Mizrahi, Alice, additional, Narayanan, Pritish, additional, Neftci, Emre, additional, Park, Jaehyuk, additional, Payvand, Melika, additional, Querlioz, Damien, additional, Rabaey, Jan M., additional, Rahimi, Abbas, additional, Rajendran, Bipin, additional, Ronen, Ronny, additional, Sebastian, Abu, additional, Shelby, Robert M., additional, Shulaker, Max M., additional, Song, Jeonghwan, additional, Spiga, Sabina, additional, Tsai, Hsinyu, additional, Vianello, Elisa, additional, Wald, Nimrod, additional, Wang, Zhongrui, additional, Wong, H.-S. Philip, additional, Wu, Huaqiang, additional, Wu, Tony F., additional, Yang, J. Joshua, additional, Yoo, Jongmyung, additional, Zhou, Ying, additional, and Zidan, Mohammed A., additional

Published
2020
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48. The surgical safety checklist and patient outcomes after surgery: a prospective observational cohort study, systematic review and meta-analysis

Author

Pearse, Rupert M., Beattie, Scott, Clavien, Pierre-Alain, Demartines, Nicolas, Fleisher, Lee A., Grocott, Mike, Haddow, James, Hoeft, Andreas, Holt, Peter, Moreno, Rui, Pritchard, Naomi, Rhodes, Andrew, Wijeysundera, Duminda, Wilson, Matt, Ahmed, Tahania, Everingham, Kirsty, Hewson, Russell, Januszewska, Marta, Phull, Mandeep-Kaur, Halliwell, Richard, Shulman, Mark, Myles, Paul, Schmid, Werner, Hiesmayr, Michael, Wouters, Patrick, de Hert, Stefan, Lobo, Suzana, Fang, Xiangming, Rasmussen, Lars, Futier, Emmanuel, Biais, Matthieu, Venara, Aurélien, Slim, Karem, Sander, Michael, Koulenti, Despoina, Arvaniti, Kostoula, Chan, Mathew, Kulkarni, Atul, Chandra, Susilo, Tantri, Aida, Geddoa, Emad, Abbas, Muntadhar, Della Rocca, Giorgio, Sivasakthi, Datin, Mansor, Marzida, Luna, Pastor, Bouwman, Arthur, Buhre, Wolfgang, Beavis, Vanessa, Campbell, Douglas, Short, Tim, Osinaike, Tunde, Matos, Ricardo, Grigoras, Ioana, Kirov, Mikhail, Protsenko, Denis, Biccard, Bruce, Aldecoa, Cesar, Chew, Michelle, Hofer, Christoph, Hubner, Martin, Ditai, James, Szakmany, Tamas, Fleisher, Lee, Ferguson, Marissa, MacMahon, Michael, Cherian, Ritchie, Currow, Helen, Kanathiban, Kathirgamanathan, Gillespie, David, Pathmanathan, Edward, Phillips, Katherine, Reynolds, Jenifer, Rowley, Joanne, Douglas, Jeanene, Kerridge, Ross, Garg, Sameer, Bennett, Michael, Jain, Megha, Alcock, David, Terblanche, Nico, Cotter, Rochelle, Leslie, Kate, Stewart, Marcelle, Zingerle, Nicolette, Clyde, Antony, Hambidge, Oliver, Rehak, Adam, Cotterell, Sharon, Huynh, Wilson Binh Quan, McCulloch, Timothy, Ben-Menachem, Erez, Egan, Thomas, Cope, Jennifer, Fellinger, Paul, Haisjackl, Markus, Haselberger, Simone, Holaubek, Caroline, Lichtenegger, Paul, Scherz, Florian, Hoffer, Franz, Cakova, Veronika, Eichwalder, Andreas, Fischbach, Norbert, Klug, Reinhold, Schneider, Elisabeth, Vesely, Martin, Wickenhauser, Reinhart, Grubmueller, Karl Gernot, Leitgeb, Marion, Lang, Friedrich, Toro, Nancy, Bauer, Marlene, Laengle, Friedrich, Haberl, Claudia, Mayrhofer, Thomas, Trybus, Christoph, Buerkle, Christian, Forstner, Karin, Germann, Reinhard, Rinoesl, Harald, Schindler, Elke, Trampitsch, Ernst, Bogner, Gerhard, Dankl, Daniel, Duenser, Martin, Fritsch, Gerhard, Gradwohl-Matis, Ilse, Hartmann, Andreas, Hoelzenbein, Thomas, Jaeger, Tarkan, Landauer, Franz, Lindl, Gregor, Lux, Michael, Steindl, Johannes, Stundner, Ottokar, Szabo, Christian, Bidgoli, Jawad, Verdoodt, Hans, Forget, Patrice, Kahn, David, Lois, Fernande, Momeni, Mona, Prégardien, Caroline, Pospiech, Audrey, Steyaert, Arnaud, Veevaete, Laurent, De Kegel, Dirk, De Jongh, Karen, Foubert, Luc, Smitz, Carine, Vercauteren, Marcel, Poelaert, Jan, Van Mossevelde, Veerle, Abeloos, Jacques, Bouchez, Stefaan, Coppens, Marc, De Baerdemaeker, Luc, Deblaere, Isabel, De Bruyne, Ann, Fonck, Kristine, Heyse, Bjorn, Jacobs, Tom, Lapage, Koen, Moerman, Anneliese, Neckebroek, Martine, Parashchanka, Aliaksandra, Roels, Nathalie, Van Den Eynde, Nancy, Vandenheuvel, Michael, Limmen, JurgenVan, Vanluchene, Ann, Vanpeteghem, Caroline, Wyffels, Piet, Huygens, Christel, Vandenbempt, Punitha, Van de Velde, Marc, Dylst, Dimitri, Janssen, Bruno, Schreurs, Evelien, Aleixo, Fábia Berganton, Candido, Keulle, Batista, Hugo Dias, Guimarães, Mario, Guizeline, Jaqueline, Hoffmann, João, Lobo, Francisco Ricardo Marques, Nascimento, Vinícius, Nishiyama, Katia, Pazetto, Lucas, Souza, Daniela, Rodrigues, Rodrigo Souza, Vilela dos Santos, Ana Maria, Jardim, Jaquelline, Sá Malbouisson, Luiz Marcelo, Silva, Joao, Nascimento Junior, Paulo do, Baio, Thalissa Hermínia, Pereira de Castro, Gabriel Isaac, Watanabe Oliveira, Henri Roger, Amendola, Cristina Prata, Cardoso, Gutemberg, Ortega, Daniela, Brotto, Ana Flavia, De Oliveira, Mirella Cristine, Réa-Neto, Álvaro, Dias, Fernando, Travi, Maria Eduarda, Zerman, Luiza, Azambuja, Pedro, Knibel, Marcos Freitas, Martins, Antonio, Almeida, William, Neto, Calim Neder, Tardelli, Maria Angela, Caser, Eliana, Machado, Marcio, Aguzzoli, Crisitiano, Baldisserotto, Sérgio, Tabajara, Fernanda Beck, Bettega, Fernanda, Rodrigues Júnior, La Hore Correa, de Gasperi, Julia, Faina, Lais, Nolasco, Marcos Farias, Ferreira da Costa Fischer, Bruna, Fosch de Campos Ferreira, Mariana, Hartmann, Cristina, Kliemann, Marta, Hubert Ribeiro, Gustavo Luis, Fraga, Julia Merladete, Netto, Thiago Motta, Pozza, Laura Valduga, Wendling, Paulo Rafael, Azevedo, Caroline, Garcia, Juliana, Lopes, Marcel, Maia, Bernardo, Maselli, Paula, Melo, Ralph, Mendes, Weslley, Neves, Matheus, Ney, Jacqueline, Piras, Claudio, Applewhaite, Christopher, Carr, Adrienne, Chow, Lorraine, Duttchen, Kaylene, Foglia, Julena, Greene, Michael, Hinther, Ashley, Houston, Kendra, McCormick, Thomas Jared, Mikhayel, Jennifer, Montasser, Sam, Ragan, Alex, Suen, Andrew, Woolsey, Adrianna, Yu, Hai Chuan, Funk, Duane, Kowalski, Stephen, Legaspi, Regina, McDonald, Heather, Siddiqui, Faisal, Pridham, Jeremy, Rowe, Bernadette, Sampson, Sonia, Thiessen, Barton, Zbitnew, Geoff, Bernard, Andre, George, Ronald, Jones, Philip, Moor, Rita, Siddiqui, Naveed, Wolfer, Alexandra, Tran, Diem, Winch, Denyse, Dobson, Gary, McCormick, Thomas, Montasser, Osama, Hall, Richard, Baghirzada, Leyla, Curley, Gerard, Dai, Si Yuan, Hare, Gregory, Lee, Esther, Shastri, Uma, Tsui, Albert, Yagnik, Anmol, Alvares, Danielle, Choi, Stephen, Dwyer, Heather, Flores, Kathrina, McCartney, Colin, Somascanthan, Priya, Carroll, Jo, Pazmino-Canizares, Janneth, Ami, Noam, Chan, Vincent, Perlas, Anahi, Argue, Ruth, Huang, Yang, Lavis, Katie, Mayson, Kelly, Cao, Ying, Gao, Hong, Hu, Tingju, Lv, Jie, Yang, Jian, Yang, Yang, Zhong, Yi, Zhou, Jing, Zou, Xiaohua, He, Miao, Li, Xiaoying, Luo, Dihuan, Wang, Haiying, Yu, Tian, Chen, Liyong, Wang, Lijun, Cai, Yunfei, Cao, Zhongming, Li, Yanling, Lian, Jiaxin, Sun, Haiyun, Wang, Sheng, Wang, Zhipeng, Wang, Kenru, Zhu, Yi, Du, Xindan, Fan, Hao, Fu, Yunbin, Huang, Lixia, Huang, Yanming, Hwan, Haifang, Luo, Hong, Qu, Pi-Sheng, Tao, Fan, Wang, Zhen, Wang, Guoxiang, Wang, Shun, Zhang, Yan, Zhang, Xiaolin, Chen, Chao, Wang, Weixing, Liu, Zhengyuan, Fan, Lihua, Tang, Jing, Chen, Yijun, Chen, Yongjie, Han, Yangyang, Huang, Changshun, Liang, Guojin, Shen, Jing, Wang, Jun, Yang, Qiuhong, Zhen, Jungang, Zhou, Haidong, Chen, Junping, Chen, Zhang, Li, Xiaoyu, Meng, Bo, Ye, Haiwang, Zhang, Xiaoyan, Bi, Yanbing, Cao, Jianqiao, Guo, Fengying, Lin, Hong, Liu, Yang, Lv, Meng, Shi, Pengcai, Song, Xiumei, Sun, Chuanyu, Sun, Yongtao, Wang, Yuelan, Wang, Shenhui, Zhang, Min, Chen, Rong, Hou, Jiabao, Leng, Yan, Meng, Qing-tao, Qian, Li, Shen, Zi-ying, Xia, Zhong-yuan, Xue, Rui, Zhang, Yuan, Zhao, Bo, Zhou, Xian-jin, Chen, Qiang, Guo, Huinan, Guo, Yongqing, Qi, Yuehong, Wang, Zhi, Wei, Jianfeng, Zhang, Weiwei, Zheng, Lina, Bao, Qi, Chen, Yaqiu, Chen, Yijiao, Fei, Yue, Hu, Nianqiang, Hu, Xuming, Lei, Min, Li, Xiaoqin, Lv, Xiaocui, Miao, Fangfang, Ouyang, Lingling, Qian, Lu, Shen, Conyu, Sun, Yu, Wang, Yuting, Wang, Dong, Wu, Chao, Xu, Liyuan, Yuan, Jiaqi, Zhang, Lina, Zhang, Huan, Zhang, Yapping, Zhao, Jinning, Zhao, Chong, Zhao, Lei, Zheng, Tianzhao, Zhou, Dachun, Zhou, Haiyan, Zhou, Ce, Lu, Kaizhi, Zhao, Ting, He, Changlin, Chen, Hong, Chen, Shasha, Cheng, Baoli, He, Jie, Jin, Lin, Li, Caixia, Li, Hui, Pan, Yuanming, Shi, Yugang, Wen, Xiao Hong, Wu, Shuijing, Xie, Guohao, Zhang, Kai, Zhao, Bing, Lu, Xianfu, Chen, Feifei, Liang, Qisheng, Lin, Xuewu, Ling, Yunzhi, Liu, Gang, Tao, Jing, Yang, Lu, Zhou, Jialong, Chen, Fumei, Cheng, Zhonggui, Dai, Hanying, Feng, Yunlin, Hou, Benchao, Gong, Haixia, Hu, Chun hua, Huang, Haijin, Huang, Jian, Jiang, Zhangjie, Li, Mengyuan, Lin, Jiamei, Liu, Mei, Liu, Weicheng, Liu, Zhen, Liu, Zhiyi, Luo, Foquan, Ma, Longxian, Min, Jia, Shi, Xiaoyun, Song, Zhiping, Wan, Xianwen, Xiong, Yingfen, Xu, Lin, Yang, Shuangjia, Zhang, Qin, Zhang, Hongyan, Zhang, Huaigen, Zhang, Xuekang, Zhao, Lili, Zhao, Weihong, Zhao, Weilu, Zhu, Xiaoping, Bai, Yun, Chen, Linbi, Chen, Sijia, Dai, Qinxue, Geng, Wujun, Han, Kunyuan, He, Xin, Huang, Luping, Ji, Binbin, Jia, Danyun, Jin, Shenhui, Li, Qianjun, Liang, Dongdong, Luo, Shan, Lwang, Lulu, Mo, Yunchang, Pan, Yuanyuan, Qi, Xinyu, Qian, Meizi, Qin, Jinling, Ren, Yelong, Shi, Yiyi, Wang, Junlu, Wang, Junkai, Wang, Leilei, Xie, Junjie, Yan, Yixiu, Yao, Yurui, Zhang, Mingxiao, Zhao, Jiashi, Zhuang, Xiuxiu, Ai, Yanqiu, Du, Fang, He, Long, Huang, Ledan, Li, Zhisong, Li, Huijuan, Li, Yetong, Li, Liwei, Meng, Su, Yuan, Yazhuo, Zhang, Enman, Zhang, Jie, Zhao, Shuna, Ji, Zhenrong, Pei, Ling, Wang, Li, Chen, Chen, Dong, Beibei, Li, Jing, Miao, Ziqiang, Mu, Hongying, Qin, Chao, Su, Lin, Wen, Zhiting, Xie, Keliang, Yu, Yonghao, Yuan, Fang, Hu, Xianwen, Zhang, Ye, Xiao, Wangpin, Zhu, Zhipeng, Dai, Qingqing, Fu, Kaiwen, Hu, Rong, Hu, Xiaolan, Huang, Song, Li, Yaqi, Liang, Yingping, Yu, Shuchun, Guo, Zheng, Jing, Yan, Tang, Na, Wu, Jie, Yuan, Dajiang, Zhang, Ruilin, Zhao, Xiaoying, Li, Yuhong, Bai, Hui-Ping, Liu, Chun-Xiao, Liu, Fei-Fei, Ren, Wei, Wang, Xiu-Li, Xu, Guan-Jie, Hu, Na, Li, Bo, Ou, Yangwen, Tang, Yongzhong, Yao, Shanglong, Zhang, Shihai, Kong, Cui-Cui, Liu, Bei, Wang, Tianlong, Xiao, Wei, Lu, Bo, Xia, Yanfei, Zhou, Jiali, Cai, Fang, Chen, Pushan, Hu, Shuangfei, Wang, Hongfa, Xu, Qiong, Hu, Liu, Jing, Liang, Li, Bin, Liu, Qiang, Liu, Yuejiang, Lu, Xinjian, Peng, Zhen Dan, Qiu, Xiaodong, Ren, Quan, Tong, Youliang, Wang, Jin, Wen, Yazhou, Wu, Qiong, Xia, Jiangyan, Xie, Jue, Xiong, Xiapei, Xu, Shixia, Yang, Tianqin, Ye, Hui, Yin, Ning, Yuan, Jing, Zeng, Qiuting, Zhang, Baoling, Zheng, Kang, Cang, Jing, Chen, Shiyu, Fan, Yu, Fu, Shuying, Ge, Xiaodong, Guo, Baolei, Huang, Wenhui, Jiang, Linghui, Jiang, Xinmei, Liu, Yi, Pan, Yan, Ren, Yun, Shan, Qi, Wang, Jiaxing, Wang, Fei, Wu, Chi, Zhang, Xiaoguang, Christiansen, Ida Cecilie, Granum, Simon Nørgaard, Rasmussen, Bodil Steen, Daugaard, Morten, Gambhir, Rajiv, Brandsborg, Birgitte, Steingrímsdóttir, Guðný Erla, Jensen-Gadegaard, Peter, Olsen, Karsten Skovgaard, Siegel, Hanna, Eskildsen, Katrine Zwicky, Gätke, Mona Ring, Wibrandt, Ida, Heintzelmann, Simon Bisgaard, Wiborg Lange, Kai Henrik, Lundsgaard, Rune Sarauw, Amstrup-Hansen, Louise, Hovendal, Claus, Larsen, Michael, Lenstrup, Mette, Kobborg, Tina, Larsen, Jens Rolighed, Pedersen, Anette Barbre, Smith, Søren Hübertz, Oestervig, Rebecca Monett, Afshari, Arash, Andersen, Cheme, Ekelund, Kim, Secher, Erik Lilja, Beloeil, Helene, Lasocki, Sigismond, Ouattara, Alexandre, Sineus, Marlene, Molliex, Serge, Legouge, Marie Lim, Wallet, Florent, Tesniere, Antoine, Gaudin, Christophe, Lehur, Paul, Forsans, Emma, de Rudnicki, Stéphane, Maudet, Valerie Serra, Mutter, Didier, Sojod, Ghassan, Ouaissi, Mehdi, Regimbeau, Jean-Marc, Desbordes, Jacques, Comptaer, Nicolas, Manser, Diae el, Ethgen, Sabine, Lebuffe, Gilles, Auer, Patrick, Härtl, Christine, Deja, Maria, Legashov, Kirill, Sonnemann, Susanne, Wiegand-Loehnert, Carola, Falk, Elke, Habicher, Marit, Angermair, Stefan, Laetsch, Beatrix, Schmidt, Katrin, Von Heymann, Christian, Ramminger, Axel, Jelschen, Florian, Pabel, Svenja, Weyland, Andreas, Czeslick, Elke, Gille, Jochen, Malcharek, Michael, Sablotzki, Armin, Lueke, Katharina, Wetzel, Peter, Weimann, Joerg, Lenhart, Franz-Peter, Reichle, Florian, Schirmer, Frederike, Hüppe, Michael, Klotz, Karl, Nau, Carla, Schön, Julika, Mencke, Thomas, Wasmund, Christina, Bankewitz, Carla, Baumgarten, Georg, Fleischer, Andreas, Guttenthaler, Vera, Hack, Yvonne, Kirchgaessner, Katharina, Männer, Olja, Schurig-Urbaniak, Marlen, Struck, Rafael, van Zyl, Rebekka, Wittmann, Maria, Goebel, Ulrich, Harris, Sarah, Veit, Siegfried, Andreadaki, Evangelia, Souri, Flora, Katsiadramis, Ioannis, Skoufi, Anthi, Vasileiou, Maria, Aimoniotou- Georgiou, Eleni, Katsourakis, Anastasios, Veroniki, Fotini, Vlachogianni, Glyceria, Petra, Konstantina, Chlorou, Dimitra, Oloktsidou, Eirini, Ourailoglou, Vasileios, Papapostolou, Konstantinos, Tsaousi, Georgia, Daikou, Panagoula, Dedemadi, Georgia, Kalaitzopoulos, Ioannis, Loumpias, Christos, Bristogiannis, Sotirios, Dafnios, Nikolaos, Gkiokas, Georgios, Kontis, Elissaios, Kozompoli, Dimitra, Papailia, Aspasia, Theodosopoulos, Theodosios, Bizios, Christol, Koutsikou, Anastasia, Moustaka, Aleaxandra, Plaitakis, Ioannis, Armaganidis, Apostolos, Christodoulopoulou, Theodora, Lignos, Mihail, Theodorakopoulou, Maria, Asimakos, Andreas, Ischaki, Eleni, Tsagkaraki, Angeliki, Zakynthinos, Spyros, Antoniadou, Eleni, Koutelidakis, Ioannis, Lathyris, Dimitrios, Pozidou, Irene, Voloudakis, Nikolaos, Dalamagka, Maria, Elena, Gkonezou, Chronis, Christos, Manolakaki, Dimitra, Mosxogiannidis, Dimitris, Slepova, Tatiana, Tsakiridou, Isaia-sissy, Lampiri, Claire, Vachlioti, Anastasia, Panagiotakis, Christos, Sfyras, Dimitrios, Tsimpoukas, Fotios, Tsirogianni, Athanasia, Axioti, Elena, Filippopoulos, Andreas, Kalliafa, Elli, Kassavetis, George, Katralis, Petros, Komnos, Ioannis, Pilichos, Georgios, Ravani, Ifigenia, Totis, Antonis, Apagaki, Eymorfia, Efthymiadi, Andromachi, Kampagiannis, 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Alexandra, Sfakianakis, Konstantinos, Sgouraki, Maria, Souvatzis, Xenia, Spartinou, Anastasia, Stefanidou, Nefeli, Syrogianni, Paulina, Tsagkaraki, Georgia, Arnaoutoglou, Elena, Arnaoutoglou, Christina, Bali, Christina, Bouris, Vasilios, Doumos, Rodamanthos, Gkini, Konstantia-Paraskevi, Kapaktsi, Clio, Koulouras, Vasilios, Lena, Arian, Lepida, Dimitra, Michos, Evangelos, Papadopoulos, Dimitrios, Paschopoulos, Minas, Rompou, Vaia Aliki, Siouti, Ioanna, Tsampalas, Stavros, Ververidou, Ourania, Zilis, Georgios, Charlalampidoy, Alexandra, Christodoulidis, Gregory, Flossos, Andreas, Stamoulis, Konstantinos, Chan, Matthew, Tsang, Man Shing Caleb, Tsang, Man Shing, Lai, Man Ling, Yip, Chi Pang, Heymans Chan, Hey Man, Law, Bassanio, Li, Wing Sze, Chu, Hiu Man, Koo, Emily Gar Yee, Lam, Chi Cheong Joe, Cheng, Ka Ho, Lam, Tracy, Chu, Susanna, Lam, Wing yan, Wong, Kin Wai Kevin, Kwok, Dilys, Hung, Ching Yue Janice, Chan, Wai Kit Jacky, Wong, Wing Lam, Chung, Chun Kwong Eric, Ma, Shu Kai, Kaushik, Shuchi, Shah, Bhagyesh, Shah, Dhiren, Shah, Sanjay, Ar, Praburaj, Muthuchellappan, Radhakrishnan, Agarwal, Vandana, Divatia, Jigeeshu, Mishra, Sanghamitra, Nimje, Ganesh, Pande, Swati, Savarkar, Sukhada, Shrivastava, Aditi, Thomas, Martin, Yegnaram, Shashikant, Hidayatullah, Rahmat, Puar, Nasman, Niman, Sumara, Indra, Imai, Hamzah, Zulkarnain, Yuliana, Annika, Abidin, Ucu Nurhadiat, Dursin, Ade Nurkacan, Kurnia, Andri, Susanti, Ade, Handayani, Dini, Alit, Mahaalit Aribawa, Arya, Aryabiantara, Senapathi, Tjokorda Gde Agung, Utara, Utara Hartawan, Wid, Widnyana Made, Wima, Semarawima, Wir, Wiryana Made, Jehosua, Brillyan, Kaunang, Jonathan, Lantang, Eka Yudha, Najoan, Rini, Waworuntu, Neil, Awad, Hadi, Fuad, Akram, Geddoa, Burair, Khalaf, Abdel Razzaq, Al hussaini, Sabah, Albaj, Safauldeensalem, Kenber, Maithem, Bettinelli, Alessandra, Spadaro, Savino, AlbertoVolta, Carlo, Giancarlo, Luigi, Sottosanti, Vicari, Copetti, Elisa, Spagnesi, Lorenzo, Toretti, Ilaria, Alloj, Chiara, Cardellino, 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Christian, Landers, A.T., Loots, Emil, Madansein, Rajhmum, Madaree, Anil, Madiba, Thandinkosi E., Manzini, Vukani T., Mbuyisa, Mbali, Moodley, Rajan, Msomi, Mduduzi, Mukama, Innocent, Naidoo, Desigan, Naidoo, Rubeshan, Naidu, Tesuven K., Ntloko, Sindiswa, Padayachee, Eneshia, Padayachee, Lucelle, Phaff, Martijn, Pillay, Bala, Pillay, Desigan, Pillay, Lutchmee, Ramnarain, Anupa, Ramphal, Suren R., Ryan, Paul, Saloojee, Ahmed, Sebitloane, Motshedisi, Sigcu, Noluyolo, Taylor, Jenna L., Torborg, Alexandra, Visser, Linda, Anderson, Philip, Conradie, Alae, de Swardt, Mathew, de Villiers, Martin, Eikman, Johan, Liebenberg, Riaan, Mouton, Johan, Paton, Abbey, van der Merwe, Louwrence, Wilscott-Davids, Candice, Barrett, Wendy Joan, Bester, Marlet, de Beer, Johan, Geldenhuys, Jacques, Gouws, Hanni, Potgieter, Jan-Hendrik, Strydom, Magdel, WilberforceTurton, Edwin, Chetty, Rubendraj R., Chirkut, Subash, Cronje, Larissa, de Vasconcellos, Kim, Dube, Nokukhanya Z., Gama, N. Sibusiso, Green, Garyth M., Green-Thompson, Randolph, Kinoo, Suman Mewa, Kistnasami, Prenolin, Maharaj, Kapil, Moodley, Manogaran S., Mothae, Sibongile J., Naidoo, Ruvashni, Aslam F Noorbhai, M., Rughubar, Vivesh, Reddy, Jenendhiran, Singh, Avesh, Skinner, David L., Smith, Murray J., Singh, Bhagwan, Misra, Ravi, Naidoo, Maheshwar, Ramdharee, Pireshin, Selibea, Yvonne, Sewpersad, Selina, Sham, Shailendra, Wessels, Joseph D., Africander, Cucu, Bejia, Tarek, Blakemore, Stephen P., Botes, Marisa, Bunwarie, Bimalshakth, Hernandez, Carlos B., Jeeraz, Mohammud A., Legutko, Dagmara A., Lopez, Acela G., De Meyer, Jenine N., Muzenda, Tanaka, Naidoo, Noel, Patel, Maryam, Pentela, Rao, Junge, Marina, Mansoor, Naj, Rademan, Lana, Scislowski, Pawel, Seedat, Ismail, van den Berg, Bianca, van der Merwe, Doreen, van Wyk, Steyn, Govender, Komalan, Naicker, Darshan, Ramjee, Rajesh, Saley, Mueen, Kuhn, Warren Paul, Matos-Puig, Roel, Alberto Lisi, Zaheer Moolla, Perez, Gisela, Beltran, Anna Valle, Lozano, Angels, Navarro, Carlos Delgado, Duca, Alejandro, Ernesto, Ernesto Pastor Martinez, Ferrando, Carlos, Fuentes, Isabel, García-Pérez, Maria Luisa, Gracia, Estefania, Palomares, Ana Izquierdo, Katime, Antonio, Miñana, Amanda, Incertis, Raul Raul, Romero, Esther, Romero Garcia, Carolina Soledad, Rubio, Concepcion, Artiles, Tania Socorro, Soro, Marina, Valls, Paola, Laguarda, Gisela Alaman, Benavent, Pau, Cuenca, Vicente Chisbert, Cueva, Andreu, Lafuente, Matilde, Parra, Asuncion Marques, Rodrigo, Alejandra Romero, Sanchez-Morcillo, Silvia, Tormo, Sergi, Redondo, Francisco Javier, De Andrés Ibanez, José Antonio, Diago, Lorena Gómez, José Hernández Cádiz, Maria, Manuel, Granell Gil, Peris, Raquel, Saiz, Cristina, Vivo, Jose Tatay, Soto, Maria Teresa Tebar, Brunete, Tamara, Cancho, David, Delgado García, David R., Zamudio, Diana, Del Valle, Santiago Garcia, Serrano, M. 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Bester, Delia, Cavanagh, Sarah, Cripps, Heather, Daniel, Harvey, Lynch, Julie, Paton, Alison, Pyke, Shirley, Scholefield, John, Whitworth, Helen, Bottrill, Fiona, Ramalingam, Ganesh, Webb, Stephen, Akerman, Nik, Antill, Philip, Bourner, Lynsey, Buckley, Sarah, Castle, Gail, Charles, Rob, Eggleston, Christopher, Foster, Rebecca, Gill, Satwant, Lindley, Kate, Lklouk, Mohamed, Lowery, Tracey, Martin, Oliver, Milne, David, O'Connor, Patrick, Ratcliffe, Andrew, Rose, Alastair, Smith, Annie, Varma, Sandeep, Ward, Jackie, Barcraft-Barnes, Helena, Camsooksai, Julie, Colvin, Carolyn, Reschreiter, Henrik, Tbaily, Lee, Venner, Nicola, Hamilton, Caroline, Kelly, Lewis, Toth-Tarsoly, Piroska, Dodsworth, Kerry, Foord, Denise, Gordon, Paul, Hawes, Elizabeth, Lamb, Nikki, Mouland, Johanna, Nightingale, Jeremy, Rose, Steve, Schrieber, Joe, Al'Amri, Khalid, Aladin, Hafiz, Arshad, Mohammed Asif, Barraclough, James, Bentley, Conor, Bergin, Colin, Carrera, Ronald, Clarkson, Aisling, Collins, Michelle, 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Shelley, Campbell, Tara, James, Sarah, King, Chris, Marques de Araujo, Daniela, Martin, Daniel, Morkane, Clare, Neely, Julia, Rajendram, Rajkumar, Burton, Megan, James, Kathryn, Keevil, Edward, Minik, Orsolya, Morgan, Jenna, Musgrave, Anna, Rajanna, Harish, Roberts, Tracey, Adamson, Michael, Jumbe, Sandra, Kendall, Jennie, Muthuswamy, Mohan Babu, Anderson, Charlotte, Cruikshanks, Andrew, Wrench, Ian, Zeidan, Lisa, Ardern, Diane, Harris, Benjamin, Hellstrom, Johanna, Martin, Jane, Thomas, Richard, Varsani, Nimu, Brown, Caroline Wrey, Docherty, Philip, Gillies, Michael, McGregor, Euan, Usher, Helen, Craig, Jayne, Smith, Andrew, Ahmad, Tahania, Bodger, Phoebe, Creary, Thais, Fowler, Alexander, Hewson, Russ, Ijuo, Eke, Jones, Timothy, Kantsedikas, Ilya, Lahiri, Sumitra, McLean, Aaron Lawson, Niebrzegowska, Edyta, Phull, Mandeep, Wang, Difei, Wickboldt, Nadine, Baldwin, Jacqueline, Doyle, Donna, Mcmullan, Sean, Oladapo, Michelle, Owen, Thomas, Williams, Alexandra, Daniel, Hull, Gregory, Peter, Husain, Tauqeer, Kirk-Bayley, Justin, Mathers, Edward, Montague, Laura, Harper, Mark, White, Stuart, Jack, James, Ridley, Carrie, Avis, Joanne, Cook, Tim, Dali-Kemmery, Lola, Kerslake, Ian, Lambourne, Victoria, Pearson, Annabel, Boyd, Christine, Callaghan, Mark, Lawson, Cathy, McCrossan, Roopa, Nesbitt, Vanessa, O'connor, Laura, Scott, Julia, Sinclair, Rhona, Farid, Nahla, Morgese, Ciro, Bhatia, Kailash, Karmarkar, Swati, Ahmed, Jamil, Branagan, Graham, Hutton, Monica, Swain, Andrew, Brookes, Jamie, Cornell, Jonathan, Dolan, Rachael, Hulme, Jonathan, Jansen van Vuuren, Amanda, Jowitt, Tom, Kalashetty, Gunasheela, Lloyd, Fran, Patel, Kiran, Sherwood, Nicholas, Brown, Lynne, Chandler, Ben, Deighton, Kerry, Emma, Temlett, Haunch, Kirsty, Cheeseman, Michelle, Dent, Kathy, Garg, Sanjeev, Gray, Carol, Hood, Marion, Jones, Dawn, Juj, Joanne, Rao, Roshan, Walker, Tara, Al Anizi, Mashel, Cheah, Clarissa, Cheing, Yushio, Coutinho, Francisco, Gondo, Prisca, Hadebe, Bernard, Hove, Mazvangu Onie, Ahamed khader, Krishnachetty, Bobby, Rhodes, Karen, Sokhi, Jagdish, Baker, Katie-Anne, Bertram, Wendy, Looseley, Alex, Mouton, Ronelle, Hanna, George, Arnold, Glenn, Arya, Shobhit, Balfoussia, Danai, Baxter, Linden, Harris, James, Jones, Craig, Knaggs, Alison, Markar, Sheraz, Perera, Anisha, Scott, Alasdair, Shida, Asako, Sirha, Ravneet, Wright, Sally, Frost, Victoria, Gray, Catherine, Andrews, Emma, Arrandale, Lindsay, Barrett, Stephen, Cifra, Elna, Cooper, Mariese, Dragnea, Dragos, Elna, Cifra, Maclean, Jennifer, Meier, Sonja, Milliken, Donald, Munns, Christopher, Ratanshi, Nadir, Ramessur, Suneil, Salvana, Abegail, Watson, Anthony, Ali, Hani, Campbell, Gill, Critchley, Rebecca, Endersby, Simon, Hicks, Catherine, Liddle, Alison, Pass, Marc, Ritchie, Charlotte, Thomas, Charlotte, Too, Lingxi, Welsh, Sarah, Gill, Talvinder, Johnson, Joanne, Reed, Joanne, Davis, Edward, Papadopoullos, Sam, Attwood, Clare, Biffen, Andrew, Boulton, Kerenza, Gray, Sophie, Hay, David, Mills, Sarah, Montgomery, Jane, Riddell, Rory, Simpson, James, Bhardwaj, Neeraj, Paul, Elaine, Uwubamwen, Nosakhare, Alexander, Maini, Arrich, James, Arumugam, Swarna, Blackwood, Douglas, Boggiano, Victoria, Brown, Robyn, Chan, Yik Lam, Chatterjee, Devnandan, Chhabra, Ashok, Christian, Rachel, Costelloe, Hannah, Matthewman, Madeline Coxwell, Dalton, Emma, Darko, Julia, Davari, Maria, Dave, Tejal, Deacon, Matthew, Deepak, Shantal, Edmond, Holly, Ellis, Jessica, El-Sayed, Ahmed, Eneje, Philip, English, Rose, Ewe, Renee, Foers, William, Franklin, John, Gallego, Laura, Garrett, Emily, Goldberg, Olivia, Goss, Harry, Greaves, Rosanna, Harris, Rudy, Hennings, Charles, Jones, Eleanor, Kamali, Nelson, Kokkinos, Naomi, Lewis, Carys, Lignos, Leda, Malgapo, Evaleen Victoria, Malik, Rizwana, Milne, Andrew, Mulligan, John-Patrick, Nicklin, Philippa, Palipane, Natasha, Parsons, Thomas, Piper, Rebecca, Prakash, Rohan, Ramesh, Byron, Rasip, Sarah, Reading, Jacob, Rela, Mariam, Reyes, Anna, Stephens, Robert, Rooms, Martin, Shah, Karishma, Simons, Henry, Solanki, Shalil, Spowart, Emma, Stevens, Amy, Thomas, Christopher, Waggett, Helena, Yassaee, Arrash, Kennedy, Anthony, Scott, Sara, Somanath, Sameer, Berg, Andrew, Hernandez, Miguel, Nanda, Rajesh, Tank, Ghanshyambhai, Wilson, Natalie, Wilson, Debbie, Al-Soudaine, Yassr, Baldwin, Matthew, Cornish, Julie, Davies, Zoe, Davies, Leigh, Edwards, Marc, Frewer, Natasha, Gallard, Sian, Glasbey, James, Harries, Rhiannon, Hopkins, Luke, Kim, Taeyang, Koompirochana, Vilavan, Lawson, Simon, Lewis, Megan, Makzal, Zaid, Scourfield, Sarah, Ahmad, Yousra, Bates, Sarah, Blackwell, Clare, Bryant, Helen, Collins, Hannah, Coulter, Suzanne, Cruickshank, Ross, Daniel, Sonya, Daubeny, Thomas, Edwards, Mark, Golder, Kim, Hawkins, Lesley, Helen, Bryant, Hinxman, Honor, Levett, Denny, Salmon, Karen, Seaward, Leanne, Skinner, Ben, Tyrell, Bryony, Wadams, Beverley, Walsgrove, Joseph, Dickson, Jane, Constantin, Kathryn, Karen, Markwell, O'Brien, Peter, O'Donohoe, Lynn, Payne, Hannah, Sundayi, Saul, Walker, Elaine, Brooke, Jenny, Cardy, Jon, Humphreys, Sally, Kessack, Laura, Kubitzek, Christiane, Kumar, Suhas, Cotterill, Donna, Hodzovic, Emil, Hosdurga, Gurunath, Miles, Edward, Saunders, Glenn, Campbell, Marta, Chan, Peter, Jemmett, Kim, Raj, Ashok, Naik, Aditi, Oshowo, Ayo, Ramamoorthy, Rajarajan, Shah, Nimesh, Sylvan, Axel, Blyth, Katharine, Burtenshaw, Andrew, Freeman, David, Johnson, Emily, Lo, Philip, Martin, Terry, Plunkett, Emma, Wollaston, Julie, Allison, Joanna, Carroll, Christine, Craw, Nicholas, Craw, Sarah, Pitt-Kerby, Tressy, Rowland-Axe, Rebecca, Spurdle, Katie, McDonald, Andrew, Simon, Davies, Sinha, Vivek, Smith, Thomas, Banner-Goodspeed, Valerie, Boone, Myles, Campbell, Kathleen, Lu, Fengxin, Scannell, Joseph, Sobol, Julia, Balajonda, Naraida, Clemmons, Karen, Conde, Carlos, Elgasim, Magdi, Funk, Bonita, Hall, Roger, Hopkins, Thomas, Olaleye, Omowunmi, Omer, Omer, Pender, Michelle, Porto, Angelo, Stevens, Alice, Waweru, Peter, Yeh, Erlinda, 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Published
2018
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49. Computing with Heat Using Biocompatible Mott Neurons

Author

Kim, Kyung Min, primary, Kim, Gwangmin, additional, In, Jae Hyun, additional, Lee, Younghyun, additional, Rhee, Hakseung, additional, Park, Woojoon, additional, Song, Hanchan, additional, Park, Juseong, additional, Jeon, Jae Bum, additional, Brown, Timothy, additional, Talin, Albert, additional, and Kumar, Suhas, additional

Published
2023
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50. Thermal Infrared Detectors: expanding performance limits using ultrafast electron microscopy

Author

Talin, Albert, primary, Ellis, Scott, additional, Bartelt, Norman, additional, Leonard, Francois, additional, Perez, Christopher, additional, Celio, Km, additional, Fuller, Elliot, additional, Hughart, David, additional, Garland, Diana, additional, Marinella, Matthew, additional, Michael, Joseph, additional, Chandler, David, additional, Young, Steve, additional, Smith, Sean, additional, and Kumar, Suhas, additional

Published
2021
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