Third-order nanocircuit elements for neuromorphic engineering

Current hardware approaches to biomimetic or neuromorphic artificial intelligence rely on elaborate transistor circuits to simulate biological functions. However, these can instead be more faithfully emulated by higher-order circuit elements that naturally express neuromorphic nonlinear dynamics.sup.1-4. Generating neuromorphic action potentials in a circuit element theoretically requires a minimum of third-order complexity (for example, three dynamical electrophysical processes).sup.5, but there have been few examples of second-order neuromorphic elements, and no previous demonstration of any isolated third-order element.sup.6-8. Using both experiments and modelling, here we show how multiple electrophysical processes--including Mott transition dynamics--form a nanoscale third-order circuit element. We demonstrate simple transistorless networks of third-order elements that perform Boolean operations and find analogue solutions to a computationally hard graph-partitioning problem. This work paves a way towards very compact and densely functional neuromorphic computing primitives, and energy-efficient validation of neuroscientific models. Electrophysical processes are used to create third-order nanoscale circuit elements, and these are used to realize a transistorless network that can perform Boolean operations and find solutions to a computationally hard graph-partitioning problem.
Author(s): Suhas Kumar [sup.1] , R. Stanley Williams [sup.2] , Ziwen Wang [sup.3] Author Affiliations: (1) Hewlett Packard Labs, Palo Alto, USA (2) Texas A&M University, College Station, USA (3) [...]