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Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

The honeycomb TbInO3 has attracted wide research attention due to its fascinating physical properties. However, TbInO3 single crystal was difficult to grow owing to the high melting point and serious volatilization of indium during the crystal growth. In this study, the volatilization of the indium element was effectively suppressed by controlling the growth atmosphere and pressure. The excess ratio of indium oxide was determined, and pure hexagonal TbInO3 crystal was obtained by the laser floating zone method. Systematic studies on the crystal structure and optical and ferroelectric properties were carried out. The structure distortion resulted in the improper geometric ferroelectric revealed by single crystal diffraction and Raman spectrum measurements. The topological vortex domains and P-E hysteresis loop demonstrated the presence of ferroelectricity. TbInO3 crystal has great potential application in vortex memory. [ABSTRACT FROM AUTHOR]

Two‐dimensional (2D) materials based on group IVA elements have attracted extensive attention owing to their rich chemical structures and novel properties. This comprehensive review focuses on the phases of Ge monoelemental and binary 2D materials including germanene and its derivatives, Ge‐IVA binary compounds, Ge‐VA binary compounds, and Ge‐VIA binary compounds. The latest progress in predictive modeling, fabrication, and fundamental and physical property modulation of their stable 2D configurations are presented. Accordingly, various interesting applications of these Ge‐based 2D materials are discussed, particularly field effect transistors, photodetectors, optical devices, catalysts, energy storage devices, solar cells, thermoelectric devices, sensors, biomedical materials, and spintronic devices. Finally, this review concludes with a few perspectives and an outlook for quickly expanding the application scope Ge‐based 2D materials based on recent developments. [ABSTRACT FROM AUTHOR]

Germanium phosphide (GeP), a rising star of novel two-dimensional (2D) material composed of Group IV–V elements, has been extensively studied and applied in photonics thanks to its broadband optical absorption, strong light–matter interaction and flexible bandgap structure. Here, we show the strong nonlinear optical (NLO) properties of 2D GeP nanoflakes in the broadband range with open-aperture Z-scan technique to explore the performance of 2D GeP microfiber photonic devices (GMPDs) in near-infrared (near-IR) and mid-infrared (mid-IR) ultrafast photonics. Our results suggest that employing the GMPD as an optical device in an erbium-doped fiber laser (EDFL) system results in ultrashort pulses and rogue waves (RWs) at 1.55 μm. Likewise, by the incorporation of GMPD into a thulium-doped fiber laser (TDFL) system, stable ultrashort pulse operation is also achieved at 2.0 μm. We expect these findings to be an excellent GMPD that can be applied in mode-locked fiber lasers to open up new avenues for its development and application in ultrafast photonics. [ABSTRACT FROM AUTHOR]

Germanium phosphide (GeP), a typical 2D group IV–V semiconductor, has attracted significant attention due to the advantages of higher thermodynamic stability than black phosphorus (BP), widely tunable bandgap, high carrier mobility, and in‐plane anisotropy. However, its photonic and optoelectronic properties have not been extensively explored so far. Herein, large size and high‐quality GeP single bulk crystal is successfully grown by flux method and stripped into 2D nanosheets with liquid phase exfoliation (LPE) and spin‐coating methods. The broad‐band photonic and optoelectronic properties of 2D GeP nanosheets are systematically investigated. First principles calculations are performed to verify its widely tunable bandgap from 0.43 eV for bulk to 1.58 eV for monolayer. The ultrafast carrier dynamic and non‐linear optical responses are investigated by non‐degenerated pump‐probe and open‐aperture Z‐scan methods, and the results indicate that 2D GeP nanosheets can present excellent broad‐band saturable absorption properties. Furthermore, the 2D GeP nanosheets‐based broad‐band saturable absorbers (SAs) and photodetectors are demonstrated. The results indicate that 2D GeP nanosheets can be used as excellent broad‐band optical modulators and detectors, which will arouse a considerable interest in exploring novel group IV–V 2D materials for broad‐band photonic and optoelectronic applications. [ABSTRACT FROM AUTHOR]