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Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application
- Source :
- Crystals, Vol 11, Iss 3, p 235 (2021)
- Publication Year :
- 2021
- Publisher :
- MDPI AG, 2021.
-
Abstract
- Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.
Details
- Language :
- English
- ISSN :
- 20734352
- Volume :
- 11
- Issue :
- 3
- Database :
- Directory of Open Access Journals
- Journal :
- Crystals
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.b49151ae3f32410a95cf633bc798bffe
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/cryst11030235