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Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature
- Publication Year :
- 2005
-
Abstract
- In this work, we report and discuss the results of minority carriers diffusion length measurements carried out in order to quantify the radiation damage induced by electron irradiation of X-rays detectors based on a metal–silicon carbide junction.The devices examined consisted of 4H-SiC n-type epitaxial layers on 4H-SiC nq-type substrate wafers, on which Schottky contacts were formed by gold deposition.The minority carriers diffusion length, extracted from the results of photocurrent measurements using a fitting procedure, was shown to exhibit a strong decrease with the radiation dose.
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1308896402
- Document Type :
- Electronic Resource