Cite
Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature
MLA
Le Donne, A., et al. Electrical and Optical Characterization of Electron-Irradiated 4H-SiC Epitaxial Layers Annealed at Low Temperature. 2005. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1308896402&authtype=sso&custid=ns315887.
APA
Le Donne, A., Binetti, S., Pizzini, S., Le Donne, A., Pizzini, S., & Binetti, S. O. (2005). Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature.
Chicago
Le Donne, A, S Binetti, S Pizzini, Alessia Le Donne, S. Pizzini, and Simona Olga Binetti. 2005. “Electrical and Optical Characterization of Electron-Irradiated 4H-SiC Epitaxial Layers Annealed at Low Temperature.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1308896402&authtype=sso&custid=ns315887.