Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

We present a methodology for estimating the efficiency potential for candidate impurity-band photovoltaic materials from empirical measurements. This methodology employs both Fourier transform infrared spectroscopy and low-temperature photoconductivity to calculate a “performance figure of merit” and to determine both the position and bandwidth of the impurity band. We evaluate a candidate impurity-band material, silicon hyperdoped with sulfur; we find that the figure of merit is more than one order of magnitude too low for photovoltaic devices that exceed the thermodynamic efficiency limit for single band gap materials.
National Science Foundation (U.S.) (Energy, Power, and Adaptive Systems Grant Contract ECCS-1102050)
National Science Foundation (U.S.) (United States. Dept. of Energy NSF CA EEC-1041895)
Center for Clean Water and Clean Energy at MIT and KFUPM