Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

MLA

Massachusetts Institute of Technology. Department of Mechanical Engineering, et al. “Methodology for Vetting Heavily Doped Semiconductors for Intermediate Band Photovoltaics: A Case Study in Sulfur-Hyperdoped Silicon.” Other Univ. Web Domain, 2015. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1141881400&authtype=sso&custid=ns315887.

APA

Massachusetts Institute of Technology. Department of Mechanical Engineering, Massachusetts Institute of Technology. Photovoltaic Research Laboratory, Sullivan, J. T., Simmons, C., Buonassisi, T., Krich, J. J., Akey, A. J., Recht, D., & Aziz, M. J. (2015). Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon. Other Univ. Web Domain.

Chicago

Massachusetts Institute of Technology. Department of Mechanical Engineering, Massachusetts Institute of Technology. Photovoltaic Research Laboratory, Joseph T. Sullivan, Christie Simmons, Tonio Buonassisi, Jacob J. Krich, Austin J. Akey, D. Recht, and Michael J. Aziz. 2015. “Methodology for Vetting Heavily Doped Semiconductors for Intermediate Band Photovoltaics: A Case Study in Sulfur-Hyperdoped Silicon.” Other Univ. Web Domain. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1141881400&authtype=sso&custid=ns315887.