Fully porous GaN p-n junctions fabricated by Chemical Vapor Deposition: a green technology towards more efficient LEDs

Authors :: Física i Cristal·lografia de Nanomaterials
Física i Cristal.lografia de Materials
Química Física i Inorgànica
Universitat Rovira i Virgili
J. J. Carvajal; F. Díaz; M. Aguiló; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer
Física i Cristal·lografia de Nanomaterials
Física i Cristal.lografia de Materials
Química Física i Inorgànica
Universitat Rovira i Virgili
J. J. Carvajal; F. Díaz; M. Aguiló; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer
Source :: ECS Transactions; 10.1149/06601.0163ecst
Publication Year :: 2015
Abstract: 10.1149/06601.0163ecst http://ecst.ecsdl.org/content/66/1/163.abstract Filiació URV: SI<br />Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in th epast. However, these fabrication techniques require further postgrowth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.

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