Fully porous GaN p-n junctions fabricated by Chemical Vapor Deposition: a green technology towards more efficient LEDs

MLA

Física i Cristal·lografia de Nanomaterials, et al. “Fully Porous GaN P-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs.” ECS Transactions, 2015. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1084744748&authtype=sso&custid=ns315887.

APA

Física i Cristal·lografia de Nanomaterials, Física i Cristal.lografia de Materials, Química Física i Inorgànica, Universitat Rovira i Virgili, & J. J. Carvajal; F. Díaz; M. Aguiló; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer. (2015). Fully porous GaN p-n junctions fabricated by Chemical Vapor Deposition: a green technology towards more efficient LEDs. ECS Transactions.

Chicago

Física i Cristal·lografia de Nanomaterials, Física i Cristal.lografia de Materials, Química Física i Inorgànica, Universitat Rovira i Virgili, and J. J. Carvajal; F. Díaz; M. Aguiló; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer. 2015. “Fully Porous GaN P-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs.” ECS Transactions. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1084744748&authtype=sso&custid=ns315887.