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InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material
- Source :
- DTIC
- Publication Year :
- 2008
-
Abstract
- InAs-based heterostructure barrier varactor (HBV) diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material are demonstrated. Current-voltage and capacitance-voltage characteristics, as well as S-parameters, of HBV diodes with varying barrier thicknesses are examined. Maximum capacitance values and maximum- to-minimum capacitance ratios greater than those predicted by traditional HBV models were measured. The HBVs' unconventional behavior in terms of charge accumulation layers adjacent to the wide bandgap barrier is discussed.<br />Published in Solid-State Electronics v52 p1829 1832, 2008.
Details
- Database :
- OAIster
- Journal :
- DTIC
- Notes :
- text/html, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.ocn872741154
- Document Type :
- Electronic Resource