InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material

MLA

Naval Research Lab Washington Dc, et al. “InAs-Based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material.” DTIC, 2008. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.ocn872741154&authtype=sso&custid=ns315887.

APA

Naval Research Lab Washington Dc, Champlain, J. G., Magno, R., Ancona, M., Newman, H. S., & Boos, J. B. (2008). InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material. DTIC.

Chicago

Naval Research Lab Washington Dc, James G Champlain, Richard Magno, Mario Ancona, Harvey S Newman, and J B Boos. 2008. “InAs-Based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material.” DTIC. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.ocn872741154&authtype=sso&custid=ns315887.