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Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress
- Source :
- Journal of Applied Physics. June 1, 2001, Vol. 89 Issue 11, p6033, 4 p.
- Publication Year :
- 2001
-
Abstract
- Research describing crack formation on GaN device layers grown on sapphire substrates is presented. A model of the nonuniformity of stress distribution induced by mesa structures is investigated.
- Subjects :
- Physics -- Research
Semiconductors -- Etching
Thin films -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 89
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.78727622