Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress

MLA

Lacroix, Yves, et al. “Cracking of GaN on Sapphire from Etch-Process-Induced Nonuniformity in Residual Thermal Stress.” Journal of Applied Physics, vol. 89, no. 11, June 2001, p. 6033. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.78727622&authtype=sso&custid=ns315887.

APA

Lacroix, Y., Chung, S.-H., & Sakai, S. (2001). Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress. Journal of Applied Physics, 89(11), 6033.

Chicago

Lacroix, Yves, Sung-Hoon Chung, and Shiro Sakai. 2001. “Cracking of GaN on Sapphire from Etch-Process-Induced Nonuniformity in Residual Thermal Stress.” Journal of Applied Physics 89 (11): 6033. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.78727622&authtype=sso&custid=ns315887.