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Influence of AlGaN deep level defects on AlGaN/GaN 3-DEG carrier confinement

Authors :
Bradley, Shawn T.
Young, Alexander P.
Brillson, Leonard J.
Murphy, Michael J.
Schaff, William J.
Eastman, Lester F.
Source :
IEEE Transactions on Electron Devices. March, 2001, Vol. 48 Issue 3, p412, 4 p.
Publication Year :
2001

Abstract

A new study uses low energy electron-excited nanoscale luminescence spectroscopy to identify the AlGaN deep level defects in AlGaN/GaN high electron mobility transistor device structures.

Subjects

Subjects :
High-electron-mobility transistors -- Research
Business
Electronics
Electronics and electrical industries

Details

ISSN :
00189383
Volume :
48
Issue :
3
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.75199124

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