Cite
Influence of AlGaN deep level defects on AlGaN/GaN 3-DEG carrier confinement
MLA
Bradley, Shawn T., et al. “Influence of AlGaN Deep Level Defects on AlGaN/GaN 3-DEG Carrier Confinement.” IEEE Transactions on Electron Devices, vol. 48, no. 3, Mar. 2001, p. 412. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.75199124&authtype=sso&custid=ns315887.
APA
Bradley, S. T., Young, A. P., Brillson, L. J., Murphy, M. J., Schaff, W. J., & Eastman, L. F. (2001). Influence of AlGaN deep level defects on AlGaN/GaN 3-DEG carrier confinement. IEEE Transactions on Electron Devices, 48(3), 412.
Chicago
Bradley, Shawn T., Alexander P. Young, Leonard J. Brillson, Michael J. Murphy, William J. Schaff, and Lester F. Eastman. 2001. “Influence of AlGaN Deep Level Defects on AlGaN/GaN 3-DEG Carrier Confinement.” IEEE Transactions on Electron Devices 48 (3): 412. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.75199124&authtype=sso&custid=ns315887.