Use of the Radiation-Induced Charge Neutralization Mechanism to Achieve Annealing of 0.35 [micro]m SRAMs

Irradiation of electronic devices has varying impact on their electrical characteristics, according to the concomitant bias scenario. Under bias, there is a process of continuous degradation; but recovery will occur if subsequent irradiation is performed without bias voltage. This phenomenon, known as 'Radiation-Induced Charge Neutralization' (RICN), was studied by us, using individual components (inverters) and complex integrated circuits (0.35 [micro]m static random access memories). Our study focussed on the effects of irradiation and bias on electronic component response.