Cite
Use of the Radiation-Induced Charge Neutralization Mechanism to Achieve Annealing of 0.35 [micro]m SRAMs
MLA
Quittard, O., et al. “Use of the Radiation-Induced Charge Neutralization Mechanism to Achieve Annealing of 0.35 [Micro]m SRAMs.” IEEE Transactions on Nuclear Science, vol. 46, no. 6, Dec. 1999, p. 1633. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.60273196&authtype=sso&custid=ns315887.
APA
Quittard, O., Joffre, F., Brisset, C., Oudea, C., Saigne, F., Dusseau, L., Fesquet, J., & Gasiot, J. (1999). Use of the Radiation-Induced Charge Neutralization Mechanism to Achieve Annealing of 0.35 [micro]m SRAMs. IEEE Transactions on Nuclear Science, 46(6), 1633.
Chicago
Quittard, O., F. Joffre, C. Brisset, C. Oudea, F. Saigne, L. Dusseau, J. Fesquet, and J. Gasiot. 1999. “Use of the Radiation-Induced Charge Neutralization Mechanism to Achieve Annealing of 0.35 [Micro]m SRAMs.” IEEE Transactions on Nuclear Science 46 (6): 1633. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.60273196&authtype=sso&custid=ns315887.