Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy

The effect of rapid thermal annealing on bulk GaInp and GaInP/AlGaInP quantum wells grown by solid source molecular beam epitaxy is investigated using deep level transient spectroscopy and time resolved photoluminescence. After the rapid thermal annealing, decreases in the concentration of several deep level traps became apparent. Results also suggest that the defect labeled N3, 0.83 eV, below the conduction band, is the dominant recombination center.