Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy

MLA

Dekker, J., et al. “Annealing of the Deep Recombination Center in GaInP/AlGaInP Quantum Wells Grown by Solid-Source Molecular Beam Epitaxy.” Journal of Applied Physics, vol. 86, no. 7, Oct. 1999, p. 3709. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.57010190&authtype=sso&custid=ns315887.

APA

Dekker, J., Tukiainen, A., Xiang, N., Orsila, S., Saarinen, M., Toivonen, M., Pessa, M., Tkachenko, N., & Lemmetyinen, H. (1999). Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy. Journal of Applied Physics, 86(7), 3709.

Chicago

Dekker, J., A. Tukiainen, N. Xiang, S. Orsila, M. Saarinen, M. Toivonen, M. Pessa, N. Tkachenko, and H. Lemmetyinen. 1999. “Annealing of the Deep Recombination Center in GaInP/AlGaInP Quantum Wells Grown by Solid-Source Molecular Beam Epitaxy.” Journal of Applied Physics 86 (7): 3709. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.57010190&authtype=sso&custid=ns315887.