Characterization of p-dopant interdiffusion in 1.3 micron InGaAsP/InP laser structures using modulation spectroscopy

Research was conducted to examine three In(sub 1-x)Ga(sub x)As(sub y)P(sub 1-y)/InP p-i-n multiple quantum well laser structures with various p-doping profiles using contactless electroreflectance and piezoreflectance. The electric field and the amount of p-dopant interdiffusion were analyzed based on the observed Franz-Keldysh oscillations originating in the i-InGaAsP regions. The values of the quantities were in good agreement with high resolution x-ray diffraction calculations.