Characterization of p-dopant interdiffusion in 1.3 micron InGaAsP/InP laser structures using modulation spectroscopy

MLA

Jaeger, A., et al. “Characterization of P-Dopant Interdiffusion in 1.3 Micron InGaAsP/InP Laser Structures Using Modulation Spectroscopy.” Journal of Applied Physics, vol. 86, no. 4, Aug. 1999, p. 2020. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.55654741&authtype=sso&custid=ns315887.

APA

Jaeger, A., Sun, W. D., Pollak, F. H., Reynolds, C. L., Jr., & Geva, M. (1999). Characterization of p-dopant interdiffusion in 1.3 micron InGaAsP/InP laser structures using modulation spectroscopy. Journal of Applied Physics, 86(4), 2020.

Chicago

Jaeger, A., W.D. Sun, Fred H. Pollak, C.L. Reynolds Jr., and M. Geva. 1999. “Characterization of P-Dopant Interdiffusion in 1.3 Micron InGaAsP/InP Laser Structures Using Modulation Spectroscopy.” Journal of Applied Physics 86 (4): 2020. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.55654741&authtype=sso&custid=ns315887.