Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization

The impact of a thin V insertion layer into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization was studied to increase the failure temperature of Ta diffusion barrier for Cu. Results showed that the insertion of the thin V layer into the Ta film enhanced barrier characteristics substantially when the Ta/V/Ta diffusion barrier was deposited with ion bombardment.