Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers

A nitrogen radio frequency-plasma source was used to analyze the photoluminescence (PL) behavior of nitrogen-doped ZnSe epilayers grown by molecular beam epitaxy. A thermalization technique is presented to explain the bound exciton which involved in the capture and emission between the neutral donor bound exciton, the neutral acceptor bound exciton and the free exciton. The results show that there is consistency betwen quantitative analysis with the suggested method and the experimental data.