Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers

MLA

Zhu, Z. M., et al. “Quantitative Analysis of Excitonic Photoluminescence in Nitrogen-Doped ZnSe Epilayers.” Journal of Applied Physics, vol. 85, no. 3, Feb. 1999, p. 1775. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.54039695&authtype=sso&custid=ns315887.

APA

Zhu, Z. M., Li, G. H., Liu, N. Z., Wang, S. Z., Han, H. X., & Wang, Z. P. (1999). Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers. Journal of Applied Physics, 85(3), 1775.

Chicago

Zhu, Z.M., G.H. Li, N.Z. Liu, S.Z. Wang, H.X. Han, and Z.P. Wang. 1999. “Quantitative Analysis of Excitonic Photoluminescence in Nitrogen-Doped ZnSe Epilayers.” Journal of Applied Physics 85 (3): 1775. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.54039695&authtype=sso&custid=ns315887.