Silicide formation in the Ta/Ti/Si system by reaction of codeposited Ta and Ti with Si (100) and Si (111) substrates

Codeposited Ta and Ti on Si (111) and (100) substrates were analyzed at 1023, 1123 and 1223 using x-ray diffraction and sheet resistance measurements. To obtain (Ti,Ta)Si2 solid solution, high temperatures were required. The rate of solution formation relied on the substrate Si orientation and developed at a faster rate on Si (111). Multisilicide phases of the respective metals were obtained at lower temperatures. The results indicate that (Ti,Ta)Si2 solid solution is formed at high temperatures.