Characteristics of a GaN-based light-emitting diode with an inserted p-GaN/i-InGaN superlattice structure

Subjects

Subjects :

Gallium nitrate -- Structure
Gallium nitrate -- Electric properties
Light-emitting diodes -- Analysis
Superlattices as materials -- Analysis
Business
Computers
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189197

Volume :

46

Issue :

3-4

Database :

Gale General OneFile

Journal :

IEEE Journal of Quantum Electronics

Publication Type :

Academic Journal

Accession number :

edsgcl.246316383