Characteristics of a GaN-based light-emitting diode with an inserted p-GaN/i-InGaN superlattice structure

MLA

Yi-Jung Liu, et al. “Characteristics of a GaN-Based Light-Emitting Diode with an Inserted p-GaN/i-InGaN Superlattice Structure.” IEEE Journal of Quantum Electronics, vol. 46, no. 3–4, Mar. 2010, p. 492. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.246316383&authtype=sso&custid=ns315887.

APA

Yi-Jung Liu, Tsung-Yuan Tsai, Chih-Hung Yen, Li-Yang Chen, Tsung-Han Tsai, & Wen-Chau Liu. (2010). Characteristics of a GaN-based light-emitting diode with an inserted p-GaN/i-InGaN superlattice structure. IEEE Journal of Quantum Electronics, 46(3–4), 492.

Chicago

Yi-Jung Liu, Tsung-Yuan Tsai, Chih-Hung Yen, Li-Yang Chen, Tsung-Han Tsai, and Wen-Chau Liu. 2010. “Characteristics of a GaN-Based Light-Emitting Diode with an Inserted p-GaN/i-InGaN Superlattice Structure.” IEEE Journal of Quantum Electronics 46 (3–4): 492. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.246316383&authtype=sso&custid=ns315887.