Transient simulation of microwave SiC MESFETs with improved trap models

Subjects

Subjects :

Electric fields -- Measurement
Field-effect transistors -- Analysis
Gallium arsenide -- Electric properties
Gates (Electronics) -- Analysis
Silicon carbide -- Electric properties
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

3

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.223641444