Cite
Transient simulation of microwave SiC MESFETs with improved trap models
MLA
Hjelmgren, H., et al. “Transient Simulation of Microwave SiC MESFETs with Improved Trap Models.” IEEE Transactions on Electron Devices, vol. 57, no. 3, Mar. 2010, p. 729. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.223641444&authtype=sso&custid=ns315887.
APA
Hjelmgren, H., Allerstam, F., Andersson, K., Nilsson, P.-A., & Rorsman, N. (2010). Transient simulation of microwave SiC MESFETs with improved trap models. IEEE Transactions on Electron Devices, 57(3), 729.
Chicago
Hjelmgren, H., F. Allerstam, K. Andersson, P.-A. Nilsson, and N. Rorsman. 2010. “Transient Simulation of Microwave SiC MESFETs with Improved Trap Models.” IEEE Transactions on Electron Devices 57 (3): 729. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.223641444&authtype=sso&custid=ns315887.