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Spectroscopic ellipsometry analysis of silicon nanotips obtained by electron cyclotron resonance plasma etching

Spectroscopic ellipsometry analysis of silicon nanotips obtained by electron cyclotron resonance plasma etching

Authors :
Mendoza-Galvan, Arturo
Jarrendahl, Kenneth
Arwin, Hans
Huang, Yi-Fan
Chen, Li-Chyong
Chen, Kuei-Hsien
Source :
Applied Optics. Sept 10, 2009, Vol. 48 Issue 26, p4996, 9 p.
Publication Year :
2009

Abstract

Silicon nanotips fabricated by electron cyclotron resonance plasma etching of silicon wafers are studied by spectroscopic ellipsometry. The structure of the nanotips is composed of columns 100-140 nm wide and spaced by about 200 nm. Ellipsometry data covering a wide spectral range from the midinfrared to the visible are described by modeling the nanotip layer as a graded uniaxial film using the Bruggeman effective medium approximation. The ellipsometry data in the infrared range reveal two absorption bands at 754 and 955 cm-1, which cannot be resolved with transmittance measurements. These bands indicate that the etching process is accompanied with formation of carbonaceous SiC and CHn species that largely modify the composition of the original crystalline silicon material affecting the optical response of the nanotips. OCIS codes: 120.2130, 160.1245, 260.2065, 310.3840.

Details

Language :
English
ISSN :
1559128X
Volume :
48
Issue :
26
Database :
Gale General OneFile
Journal :
Applied Optics
Publication Type :
Academic Journal
Accession number :
edsgcl.210223187